Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs
We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/pGaN Schottky junctions annealed within a certain annealing condition window (600 - 700 oC, 1 - 4 min). Results from similar common-anode Schottky junctions made of Au/p-GaN, Al/T...
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| creator | Zhou, Guangnan Jiang, Yang Yang, Gaiying Wang, Qing Fan, Mengya Jiang, Lingli Yu, Hongyu Xia, Guangrui |
| description | We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/pGaN Schottky junctions annealed within a certain annealing condition window (600 - 700 oC, 1 - 4 min). Results from similar common-anode Schottky junctions made of Au/p-GaN, Al/Ti/p-GaN and Au/Ti/graphene/p-GaN junctions demonstrated that all the three layers (Au, Ti and p-GaN) are essential for the increased resistance. Raman characterization of the p-GaN showed a decrease of the Mg-N bonding, i.e., the deactivation of Mg, which is consistent with the Hall measurement results. Moreover, this high-resistance junction structure was employed in p-GaN gate AlGaN/GaN HEMTs. It was shown to be an effective gate technology that was capable to boost the gate breakdown voltage from 9.9 V to 13.8 V with a negligible effect on the threshold voltage or the sub-threshold slope. |
| doi_str_mv | 10.48550/arxiv.2102.03418 |
| format | Article |
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Results from similar common-anode Schottky junctions made of Au/p-GaN, Al/Ti/p-GaN and Au/Ti/graphene/p-GaN junctions demonstrated that all the three layers (Au, Ti and p-GaN) are essential for the increased resistance. Raman characterization of the p-GaN showed a decrease of the Mg-N bonding, i.e., the deactivation of Mg, which is consistent with the Hall measurement results. Moreover, this high-resistance junction structure was employed in p-GaN gate AlGaN/GaN HEMTs. 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Results from similar common-anode Schottky junctions made of Au/p-GaN, Al/Ti/p-GaN and Au/Ti/graphene/p-GaN junctions demonstrated that all the three layers (Au, Ti and p-GaN) are essential for the increased resistance. Raman characterization of the p-GaN showed a decrease of the Mg-N bonding, i.e., the deactivation of Mg, which is consistent with the Hall measurement results. Moreover, this high-resistance junction structure was employed in p-GaN gate AlGaN/GaN HEMTs. It was shown to be an effective gate technology that was capable to boost the gate breakdown voltage from 9.9 V to 13.8 V with a negligible effect on the threshold voltage or the sub-threshold slope.</description><subject>Aluminum gallium nitrides</subject><subject>Annealing</subject><subject>Anodes</subject><subject>Gallium nitrides</subject><subject>Graphene</subject><subject>Hall effect</subject><subject>Physics - Materials Science</subject><subject>Threshold voltage</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GOX</sourceid><recordid>eNot0N9LwzAQB_AgCI65P8AnCz5nTS5Jkz6OsR_KVJD6XNM2cRldW5NW9L-323w6uPtw3H0RuqNkzpUQJNb-x33PgRKYE8apukITYIxixQFu0CyEAyEEEglCsAn6WLf-qHvXNlFro_e69xpv3ecev5ngQq-b0kSLIc5c3OGNfomehqY86RDppor6_TjtutqV-tJ0TbSoRxef7Hb1nIVbdG11Hczsv05Rtl5lyy3evW4el4sd1qlQGGxalJKA5VBZA0lliTQpJypNE1MkQtBClLIyUkhOy6IyVjIgvOIgBU1Vwabo_rL2_H7eeXfU_jc_xZCfYxjFw0V0vv0aTOjzQzv4ZrwpB65kwoEyxv4AZIheFw</recordid><startdate>20210205</startdate><enddate>20210205</enddate><creator>Zhou, Guangnan</creator><creator>Jiang, Yang</creator><creator>Yang, Gaiying</creator><creator>Wang, Qing</creator><creator>Fan, Mengya</creator><creator>Jiang, Lingli</creator><creator>Yu, Hongyu</creator><creator>Xia, Guangrui</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20210205</creationdate><title>Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs</title><author>Zhou, Guangnan ; 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| subjects | Aluminum gallium nitrides Annealing Anodes Gallium nitrides Graphene Hall effect Physics - Materials Science Threshold voltage |
| title | Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs |
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