Large-Signal and High--Frequency Analysis of Nonuniformly Doped or Shaped PN-Junction Diodes
An analytical theory of non-uniformly doped or shaped PN-junction diodes submitted to large-signals at high frequencies is presented. The resulting expressions can be useful to evaluate the performance of semiconductor device modeling software. The transverse averaging technique is employed to reduc...
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| creator | Barybin, Anatoly A Santos, Edval J P |
| description | An analytical theory of non-uniformly doped or shaped PN-junction diodes submitted to large-signals at high frequencies is presented. The resulting expressions can be useful to evaluate the performance of semiconductor device modeling software. The transverse averaging technique is employed to reduce the three-dimensional charge carrier transport equations into the quasi-one-dimensional form, with all physical quantities averaged out over the longitudinally-varying cross section. Although, it is assumed an axial symmetry, this approach gives rise to useful analytic expressions for the static current--voltage characteristics, the diffusion conductance, and diffusion capacitance as a function of the signal amplitude and the cross section non-uniformity. |
| doi_str_mv | 10.48550/arxiv.2011.13896 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_arxiv</sourceid><recordid>TN_cdi_arxiv_primary_2011_13896</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2465579672</sourcerecordid><originalsourceid>FETCH-LOGICAL-a522-aa936db78644729d6333ea6a17037b8515b88cad581dc5cf61691771c4f44a9c3</originalsourceid><addsrcrecordid>eNotkE1rAjEURUOhULH-gK4a6Do238ksRWttEVvQZWGIyYxGNLGJUzr_vqN29S68y4VzAHggeMi1EPjZpF__M6SYkCFhupA3oEcZI0hzSu_AIOcdxphKRYVgPfA1N2lToaXfBLOHJjg485stQtNUfTdVsC0cdY82-wxjDRcxNMHXMR32LZzEY-VgTHC5Nef0uUDvTbAnHwOc-OiqfA9ua7PP1eD_9sFq-rIaz9D84_VtPJojIyhFxhRMurXSknNFCycZY5WRhijM1FoLItZaW-OEJs4KW0siC6IUsbzm3BSW9cHjdfaCXh6TP5jUlmcF5UVB13i6No4pdlj5VO5ikzqwXFIuhVBF54P9AU1aXXk</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2465579672</pqid></control><display><type>article</type><title>Large-Signal and High--Frequency Analysis of Nonuniformly Doped or Shaped PN-Junction Diodes</title><source>arXiv.org</source><source>Free E- Journals</source><creator>Barybin, Anatoly A ; Santos, Edval J P</creator><creatorcontrib>Barybin, Anatoly A ; Santos, Edval J P</creatorcontrib><description>An analytical theory of non-uniformly doped or shaped PN-junction diodes submitted to large-signals at high frequencies is presented. The resulting expressions can be useful to evaluate the performance of semiconductor device modeling software. The transverse averaging technique is employed to reduce the three-dimensional charge carrier transport equations into the quasi-one-dimensional form, with all physical quantities averaged out over the longitudinally-varying cross section. Although, it is assumed an axial symmetry, this approach gives rise to useful analytic expressions for the static current--voltage characteristics, the diffusion conductance, and diffusion capacitance as a function of the signal amplitude and the cross section non-uniformity.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.2011.13896</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Carrier transport ; Cross-sections ; Current carriers ; Frequency analysis ; Junction diodes ; Nonuniformity ; Physics - Applied Physics ; Physics - Computational Physics ; Physics - Mesoscale and Nanoscale Physics ; Resistance ; Transport equations</subject><ispartof>arXiv.org, 2020-11</ispartof><rights>2020. This work is published under http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,780,784,885,27916</link.rule.ids><backlink>$$Uhttps://doi.org/10.48550/arXiv.2011.13896$$DView paper in arXiv$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.1063/1.3592206$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink></links><search><creatorcontrib>Barybin, Anatoly A</creatorcontrib><creatorcontrib>Santos, Edval J P</creatorcontrib><title>Large-Signal and High--Frequency Analysis of Nonuniformly Doped or Shaped PN-Junction Diodes</title><title>arXiv.org</title><description>An analytical theory of non-uniformly doped or shaped PN-junction diodes submitted to large-signals at high frequencies is presented. The resulting expressions can be useful to evaluate the performance of semiconductor device modeling software. The transverse averaging technique is employed to reduce the three-dimensional charge carrier transport equations into the quasi-one-dimensional form, with all physical quantities averaged out over the longitudinally-varying cross section. Although, it is assumed an axial symmetry, this approach gives rise to useful analytic expressions for the static current--voltage characteristics, the diffusion conductance, and diffusion capacitance as a function of the signal amplitude and the cross section non-uniformity.</description><subject>Carrier transport</subject><subject>Cross-sections</subject><subject>Current carriers</subject><subject>Frequency analysis</subject><subject>Junction diodes</subject><subject>Nonuniformity</subject><subject>Physics - Applied Physics</subject><subject>Physics - Computational Physics</subject><subject>Physics - Mesoscale and Nanoscale Physics</subject><subject>Resistance</subject><subject>Transport equations</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GOX</sourceid><recordid>eNotkE1rAjEURUOhULH-gK4a6Do238ksRWttEVvQZWGIyYxGNLGJUzr_vqN29S68y4VzAHggeMi1EPjZpF__M6SYkCFhupA3oEcZI0hzSu_AIOcdxphKRYVgPfA1N2lToaXfBLOHJjg485stQtNUfTdVsC0cdY82-wxjDRcxNMHXMR32LZzEY-VgTHC5Nef0uUDvTbAnHwOc-OiqfA9ua7PP1eD_9sFq-rIaz9D84_VtPJojIyhFxhRMurXSknNFCycZY5WRhijM1FoLItZaW-OEJs4KW0siC6IUsbzm3BSW9cHjdfaCXh6TP5jUlmcF5UVB13i6No4pdlj5VO5ikzqwXFIuhVBF54P9AU1aXXk</recordid><startdate>20201127</startdate><enddate>20201127</enddate><creator>Barybin, Anatoly A</creator><creator>Santos, Edval J P</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20201127</creationdate><title>Large-Signal and High--Frequency Analysis of Nonuniformly Doped or Shaped PN-Junction Diodes</title><author>Barybin, Anatoly A ; Santos, Edval J P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a522-aa936db78644729d6333ea6a17037b8515b88cad581dc5cf61691771c4f44a9c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Carrier transport</topic><topic>Cross-sections</topic><topic>Current carriers</topic><topic>Frequency analysis</topic><topic>Junction diodes</topic><topic>Nonuniformity</topic><topic>Physics - Applied Physics</topic><topic>Physics - Computational Physics</topic><topic>Physics - Mesoscale and Nanoscale Physics</topic><topic>Resistance</topic><topic>Transport equations</topic><toplevel>online_resources</toplevel><creatorcontrib>Barybin, Anatoly A</creatorcontrib><creatorcontrib>Santos, Edval J P</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest Central</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Barybin, Anatoly A</au><au>Santos, Edval J P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Large-Signal and High--Frequency Analysis of Nonuniformly Doped or Shaped PN-Junction Diodes</atitle><jtitle>arXiv.org</jtitle><date>2020-11-27</date><risdate>2020</risdate><eissn>2331-8422</eissn><abstract>An analytical theory of non-uniformly doped or shaped PN-junction diodes submitted to large-signals at high frequencies is presented. The resulting expressions can be useful to evaluate the performance of semiconductor device modeling software. The transverse averaging technique is employed to reduce the three-dimensional charge carrier transport equations into the quasi-one-dimensional form, with all physical quantities averaged out over the longitudinally-varying cross section. Although, it is assumed an axial symmetry, this approach gives rise to useful analytic expressions for the static current--voltage characteristics, the diffusion conductance, and diffusion capacitance as a function of the signal amplitude and the cross section non-uniformity.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.2011.13896</doi><oa>free_for_read</oa></addata></record> |
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| subjects | Carrier transport Cross-sections Current carriers Frequency analysis Junction diodes Nonuniformity Physics - Applied Physics Physics - Computational Physics Physics - Mesoscale and Nanoscale Physics Resistance Transport equations |
| title | Large-Signal and High--Frequency Analysis of Nonuniformly Doped or Shaped PN-Junction Diodes |
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