Noise performance & thermalization of single electron transistors using quantum fluids
We report on low-temperature noise measurements of a single electron transistor (SET) immersed in superfluid \(^4\)He. The device acts as a charge sensitive electrometer able to detect the fluctuations of charged defects in close proximity to the SET. In particular, we measure telegraph switching of...
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description | We report on low-temperature noise measurements of a single electron transistor (SET) immersed in superfluid \(^4\)He. The device acts as a charge sensitive electrometer able to detect the fluctuations of charged defects in close proximity to the SET. In particular, we measure telegraph switching of the electric current through the device originating from a strongly coupled individual two-level fluctuator. By embedding the device in a superfluid helium immersion cell we are able to systematically control the thermalizing environment surrounding the SET and investigate the effect of the superfluid on the SET noise performance. We find that the presence of superfluid \(^4\)He can strongly suppress the switching rate of the defect by cooling the surrounding phonon bath. |
doi_str_mv | 10.48550/arxiv.2010.06675 |
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The device acts as a charge sensitive electrometer able to detect the fluctuations of charged defects in close proximity to the SET. In particular, we measure telegraph switching of the electric current through the device originating from a strongly coupled individual two-level fluctuator. By embedding the device in a superfluid helium immersion cell we are able to systematically control the thermalizing environment surrounding the SET and investigate the effect of the superfluid on the SET noise performance. We find that the presence of superfluid \(^4\)He can strongly suppress the switching rate of the defect by cooling the surrounding phonon bath.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.2010.06675</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Cooling rate ; Fluids ; Liquid helium ; Low temperature ; Noise ; Physics - Mesoscale and Nanoscale Physics ; Physics - Quantum Physics ; Semiconductor devices ; Single-electron transistors ; Stability ; Submerging ; Superfluidity ; Switching ; Thermalization (energy absorption)</subject><ispartof>arXiv.org, 2021-09</ispartof><rights>2021. This work is published under http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (the “License”). 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We find that the presence of superfluid \(^4\)He can strongly suppress the switching rate of the defect by cooling the surrounding phonon bath.</description><subject>Cooling rate</subject><subject>Fluids</subject><subject>Liquid helium</subject><subject>Low temperature</subject><subject>Noise</subject><subject>Physics - Mesoscale and Nanoscale Physics</subject><subject>Physics - Quantum Physics</subject><subject>Semiconductor devices</subject><subject>Single-electron transistors</subject><subject>Stability</subject><subject>Submerging</subject><subject>Superfluidity</subject><subject>Switching</subject><subject>Thermalization (energy absorption)</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GOX</sourceid><recordid>eNotj19LwzAUxYMgOOY-gE8GBN86k9vcNn2U4T8Y-jJ8LVlzqxldsyWpqJ_ebvPpXM45XM6PsSsp5kojijsTvt3XHMRoiKIo8YxNIM9lphXABZvFuBFCQFECYj5h76_eReI7Cq0PW9M3xG95-qTx7tyvSc733Lc8uv6jI04dNSmMVgqmjy4mHyIfDiHfD6ZPw5a33eBsvGTnrekizf51ylaPD6vFc7Z8e3pZ3C8zgwDZ2kjdNGtlK7SIVgIo0FiSrZS0irSQZAVCRQalFKUsgYwWomjRVJXOdT5l16e3R-h6F9zWhJ_6AF8f4cfGzamxC34_UEz1xg-hHzfVoFACykpC_gd2Rl0A</recordid><startdate>20210928</startdate><enddate>20210928</enddate><creator>Beysengulov, N R</creator><creator>Lane, J R</creator><creator>Kitzman, J M</creator><creator>Nasyedkin, K</creator><creator>Rees, D G</creator><creator>Pollanen, J</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20210928</creationdate><title>Noise performance & thermalization of single electron transistors using quantum fluids</title><author>Beysengulov, N R ; 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The device acts as a charge sensitive electrometer able to detect the fluctuations of charged defects in close proximity to the SET. In particular, we measure telegraph switching of the electric current through the device originating from a strongly coupled individual two-level fluctuator. By embedding the device in a superfluid helium immersion cell we are able to systematically control the thermalizing environment surrounding the SET and investigate the effect of the superfluid on the SET noise performance. We find that the presence of superfluid \(^4\)He can strongly suppress the switching rate of the defect by cooling the surrounding phonon bath.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.2010.06675</doi><oa>free_for_read</oa></addata></record> |
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subjects | Cooling rate Fluids Liquid helium Low temperature Noise Physics - Mesoscale and Nanoscale Physics Physics - Quantum Physics Semiconductor devices Single-electron transistors Stability Submerging Superfluidity Switching Thermalization (energy absorption) |
title | Noise performance & thermalization of single electron transistors using quantum fluids |
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