Ultrafast non-volatile flash memory based on van der Waals heterostructures
Flash memory has become a ubiquitous solid-state memory device, it is widely used in portable digital devices, computers, and enterprise applications. The development of the information age has put forward higher requirements for memory speed and retention performance. Here, we demonstrate an ultraf...
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| Veröffentlicht in: | arXiv.org 2020-09 |
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| creator | Liu, Lan Ding, Yi Li, Jiayi Liu, Chunsen Zhou, Peng |
| description | Flash memory has become a ubiquitous solid-state memory device, it is widely used in portable digital devices, computers, and enterprise applications. The development of the information age has put forward higher requirements for memory speed and retention performance. Here, we demonstrate an ultrafast non-volatile memory based on MoS2/h-BN/multi-layer graphene (MLG) van der Waals heterostructures, which has an atomic-level flat interface and achieves ultrafast writing/erasing speed (~20 ns), surpassing the reported state-of-the-art flash memory (~100 ns). The ultrafast flash memory could lay the foundation for the next-generation of high-speed non-volatile memory. |
| doi_str_mv | 10.48550/arxiv.2009.01581 |
| format | Article |
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| subjects | Computer Science - Emerging Technologies Digital computers Flash memory (computers) Graphene Heterostructures Memory devices Multilayers Physics - Applied Physics Portable equipment |
| title | Ultrafast non-volatile flash memory based on van der Waals heterostructures |
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