b{eta}-phase (AlxGa1-x)2O3 thin film with Al composition more than 70

In this work, we have demonstrated wide-composition-range \b{eta}-(AlxGa1-x)2O3 thin films with record-high Al compositions up to 77% for \b{eta}-(AlxGa1-x)2O3 covering bandgaps from 4.9 to 6.4 eV. With optimized thermal annealing conditions, the \b{eta}-Ga2O3 binary thin films on sapphire substrate...

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Hauptverfasser:	Liao, Che-Hao, Li, Kuang-Hui, Castanedo, C. G. Torres, Zhang, Guozheng, Li, Xiaohang
Format:	Artikel
Sprache:	eng
Schlagworte:	Physics - Applied Physics
Online-Zugang:	Volltext bestellen
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