Topological Hall effect in single thick SrRuO3 layers induced by defect engineering

The topological Hall effect (THE) has been discovered in ultrathin SrRuO3 (SRO) films, where the interface between the SRO layer and another oxide layer breaks the inversion symmetry resulting in the appearance of THE. Thus, THE only occurs in ultra-thin SRO films of several unit cells. In addition...

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Veröffentlicht in:	arXiv.org 2020-04
Hauptverfasser:	Wang, Changan, Ching-Hao, Chang, Herklotz, Andreas, Chen, Chao, Ganss, Fabian, Kentsch, Ulrich, Chen, Deyang, Gao, Xingsen, Yu-Jia, Zeng, Hellwig, Olav, Helm, Manfred, Gemming, Sibylle, Ying-Hao, Chu, Zhou, Shengqiang
Format:	Artikel
Sprache:	eng
Schlagworte:	Broken symmetry Crystal defects Electromagnetism Hall effect Helium ions Heterostructures Ion irradiation Physics - Materials Science Spintronics Symmetry Thick films Thin films Topology
Online-Zugang:	Volltext
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