Spin-accumulation induced magnetic texture in a metal-insulator bilayer
We consider the influence of a spin accumulation in a normal metal on the magnetic statics and dynamics in an adjacent magnetic insulator. In particular, we focus on arbitary angles between the spin accumulation and the easy-axis of the magnetic insulator. Based on Landau-Lifshitz-Gilbert phenomenol...
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| creator | Hartmann, Dion M F Rückriegel, Andreas Duine, Rembert A |
| description | We consider the influence of a spin accumulation in a normal metal on the magnetic statics and dynamics in an adjacent magnetic insulator. In particular, we focus on arbitary angles between the spin accumulation and the easy-axis of the magnetic insulator. Based on Landau-Lifshitz-Gilbert phenomenology supplemented with magnetoelectronic circuit theory, we find that the magnetic texture twists into a stable configuration that turns out to be described by a virtual, or image, domain wall configuration, i.e., a domain wall outside the ferromagnet. We show that even when the spin accumulation is perpendicular to the anisotropy axis, the magnetic texture develops a component parallel to the spin accumulation for sufficiently large spin bias. The emergence of this parallel component gives rise to threshold behavior in the spin Hall magnetoresistance and nonlocal magnon transport. This threshold can be used to design novel spintronic and magnonic devices that can be operated without external magnetic fields. |
| doi_str_mv | 10.48550/arxiv.2003.03226 |
| format | Article |
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In particular, we focus on arbitary angles between the spin accumulation and the easy-axis of the magnetic insulator. Based on Landau-Lifshitz-Gilbert phenomenology supplemented with magnetoelectronic circuit theory, we find that the magnetic texture twists into a stable configuration that turns out to be described by a virtual, or image, domain wall configuration, i.e., a domain wall outside the ferromagnet. We show that even when the spin accumulation is perpendicular to the anisotropy axis, the magnetic texture develops a component parallel to the spin accumulation for sufficiently large spin bias. The emergence of this parallel component gives rise to threshold behavior in the spin Hall magnetoresistance and nonlocal magnon transport. 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This threshold can be used to design novel spintronic and magnonic devices that can be operated without external magnetic fields.</description><subject>Accumulation</subject><subject>Anisotropy</subject><subject>Circuits</subject><subject>Configurations</subject><subject>Domain walls</subject><subject>Ferromagnetism</subject><subject>Insulators</subject><subject>Magnetoresistance</subject><subject>Magnetoresistivity</subject><subject>Magnons</subject><subject>Phenomenology</subject><subject>Physics - Mesoscale and Nanoscale Physics</subject><subject>Texture</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GOX</sourceid><recordid>eNotj0tLw0AUhQdBsNT-AFcGXCfO3DszSZZStAoFF3Yf7kxuZUoedZJI--_tw9VZnI_D-YR4UDLThTHymeIh_GYgJWYSAeyNmAGiSgsNcCcWw7CTUoLNwRicidXXPnQpeT-1U0Nj6LskdPXkuU5a-u54DD4Z-TBOkU9FQknLIzVp6IYz3sfEhYaOHO_F7ZaagRf_ORebt9fN8j1df64-li_rlAyo1EuplNWldrlFpnwra1TeAroyZw95YclZNN6zJnSksGCyzgLrsi5L63AuHq-zF8tqH0NL8VidbauL7Yl4uhL72P9MPIzVrp9id_pUAea6VNqgwj8Hv1es</recordid><startdate>20200306</startdate><enddate>20200306</enddate><creator>Hartmann, Dion M F</creator><creator>Rückriegel, Andreas</creator><creator>Duine, Rembert A</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20200306</creationdate><title>Spin-accumulation induced magnetic texture in a metal-insulator bilayer</title><author>Hartmann, Dion M F ; Rückriegel, Andreas ; Duine, Rembert A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a521-c00116494b763ea7f0d31c623b97ec2786ab635cce4a3ba138ea6b62e49d996b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Accumulation</topic><topic>Anisotropy</topic><topic>Circuits</topic><topic>Configurations</topic><topic>Domain walls</topic><topic>Ferromagnetism</topic><topic>Insulators</topic><topic>Magnetoresistance</topic><topic>Magnetoresistivity</topic><topic>Magnons</topic><topic>Phenomenology</topic><topic>Physics - Mesoscale and Nanoscale Physics</topic><topic>Texture</topic><toplevel>online_resources</toplevel><creatorcontrib>Hartmann, Dion M F</creatorcontrib><creatorcontrib>Rückriegel, Andreas</creatorcontrib><creatorcontrib>Duine, Rembert A</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Access via ProQuest (Open Access)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hartmann, Dion M F</au><au>Rückriegel, Andreas</au><au>Duine, Rembert A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Spin-accumulation induced magnetic texture in a metal-insulator bilayer</atitle><jtitle>arXiv.org</jtitle><date>2020-03-06</date><risdate>2020</risdate><eissn>2331-8422</eissn><abstract>We consider the influence of a spin accumulation in a normal metal on the magnetic statics and dynamics in an adjacent magnetic insulator. In particular, we focus on arbitary angles between the spin accumulation and the easy-axis of the magnetic insulator. Based on Landau-Lifshitz-Gilbert phenomenology supplemented with magnetoelectronic circuit theory, we find that the magnetic texture twists into a stable configuration that turns out to be described by a virtual, or image, domain wall configuration, i.e., a domain wall outside the ferromagnet. We show that even when the spin accumulation is perpendicular to the anisotropy axis, the magnetic texture develops a component parallel to the spin accumulation for sufficiently large spin bias. The emergence of this parallel component gives rise to threshold behavior in the spin Hall magnetoresistance and nonlocal magnon transport. 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| subjects | Accumulation Anisotropy Circuits Configurations Domain walls Ferromagnetism Insulators Magnetoresistance Magnetoresistivity Magnons Phenomenology Physics - Mesoscale and Nanoscale Physics Texture |
| title | Spin-accumulation induced magnetic texture in a metal-insulator bilayer |
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