Correlation between crystal purity and the charge density wave in 1$T$-VSe$_2
Phys. Rev. Materials 4, 025002 (2020) We examine the charge density wave (CDW) properties of 1$T$-VSe$_{2}$ crystals grown by chemical vapour transport (CVT) under varying conditions. Specifically, we find that by lowering the growth temperature ($T_{\mathrm{g}}$ $
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creator | Sayers, C. J Farrar, L. S Bending, S. J Cattelan, M Jones, A. J. H Fox, N. A Kociok-Köhn, G Koshmak, K Laverock, J Pasquali, L Da Como, E |
description | Phys. Rev. Materials 4, 025002 (2020) We examine the charge density wave (CDW) properties of 1$T$-VSe$_{2}$
crystals grown by chemical vapour transport (CVT) under varying conditions.
Specifically, we find that by lowering the growth temperature ($T_{\mathrm{g}}$
$ |
doi_str_mv | 10.48550/arxiv.2001.08020 |
format | Article |
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crystals grown by chemical vapour transport (CVT) under varying conditions.
Specifically, we find that by lowering the growth temperature ($T_{\mathrm{g}}$
$<$ 630$^{\circ}$C), there is a significant increase in both the CDW transition
temperature and the residual resistance ratio (RRR) obtained from electrical
transport measurements. Using x-ray photoelectron spectroscopy (XPS), we
correlate the observed CDW properties with stoichiometry and the nature of
defects. In addition, we have optimized a method to grow ultra-high purity
1$T$-VSe$_{2}$ crystals with a CDW transition temperature, $T_{\mathrm{CDW}}$ =
(112.7 $\pm$ 0.8) K and maximum residual resistance ratio (RRR) $\approx$ 49,
which is the highest reported thus far. This work highlights the sensitivity of
the CDW in 1$T$-VSe$_{2}$ to defects and overall stoichiometry, and the
importance of controlling the crystal growth conditions of strongly-correlated
transition metal dichalcogenides.</description><identifier>DOI: 10.48550/arxiv.2001.08020</identifier><language>eng</language><subject>Physics - Strongly Correlated Electrons</subject><creationdate>2020-01</creationdate><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,781,886</link.rule.ids><linktorsrc>$$Uhttps://arxiv.org/abs/2001.08020$$EView_record_in_Cornell_University$$FView_record_in_$$GCornell_University$$Hfree_for_read</linktorsrc><backlink>$$Uhttps://doi.org/10.1103/PhysRevMaterials.4.025002$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.48550/arXiv.2001.08020$$DView paper in arXiv$$Hfree_for_read</backlink></links><search><creatorcontrib>Sayers, C. J</creatorcontrib><creatorcontrib>Farrar, L. S</creatorcontrib><creatorcontrib>Bending, S. J</creatorcontrib><creatorcontrib>Cattelan, M</creatorcontrib><creatorcontrib>Jones, A. J. H</creatorcontrib><creatorcontrib>Fox, N. A</creatorcontrib><creatorcontrib>Kociok-Köhn, G</creatorcontrib><creatorcontrib>Koshmak, K</creatorcontrib><creatorcontrib>Laverock, J</creatorcontrib><creatorcontrib>Pasquali, L</creatorcontrib><creatorcontrib>Da Como, E</creatorcontrib><title>Correlation between crystal purity and the charge density wave in 1$T$-VSe$_2</title><description>Phys. Rev. Materials 4, 025002 (2020) We examine the charge density wave (CDW) properties of 1$T$-VSe$_{2}$
crystals grown by chemical vapour transport (CVT) under varying conditions.
Specifically, we find that by lowering the growth temperature ($T_{\mathrm{g}}$
$<$ 630$^{\circ}$C), there is a significant increase in both the CDW transition
temperature and the residual resistance ratio (RRR) obtained from electrical
transport measurements. Using x-ray photoelectron spectroscopy (XPS), we
correlate the observed CDW properties with stoichiometry and the nature of
defects. In addition, we have optimized a method to grow ultra-high purity
1$T$-VSe$_{2}$ crystals with a CDW transition temperature, $T_{\mathrm{CDW}}$ =
(112.7 $\pm$ 0.8) K and maximum residual resistance ratio (RRR) $\approx$ 49,
which is the highest reported thus far. This work highlights the sensitivity of
the CDW in 1$T$-VSe$_{2}$ to defects and overall stoichiometry, and the
importance of controlling the crystal growth conditions of strongly-correlated
transition metal dichalcogenides.</description><subject>Physics - Strongly Correlated Electrons</subject><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>GOX</sourceid><recordid>eNqFjrEOgkAQBa-xMOoHWLkFLbigJPREY2Mlsb2ssMgleJDlBPl7A7G3muRlkjdKbUMMjkkc457kY_ogQgwDTDDCpbqmjQjX5Exj4cFuYLaQy9g5qqF9i3EjkC3AVQx5RfJkKNh20zxQz2AshF7m-fcbezpaq0VJdcebH1dqdz5l6cWfj3Ur5kUy6ilAzwGH_8YX28Y6KA</recordid><startdate>20200122</startdate><enddate>20200122</enddate><creator>Sayers, C. J</creator><creator>Farrar, L. S</creator><creator>Bending, S. J</creator><creator>Cattelan, M</creator><creator>Jones, A. J. H</creator><creator>Fox, N. A</creator><creator>Kociok-Köhn, G</creator><creator>Koshmak, K</creator><creator>Laverock, J</creator><creator>Pasquali, L</creator><creator>Da Como, E</creator><scope>GOX</scope></search><sort><creationdate>20200122</creationdate><title>Correlation between crystal purity and the charge density wave in 1$T$-VSe$_2</title><author>Sayers, C. J ; Farrar, L. S ; Bending, S. J ; Cattelan, M ; Jones, A. J. H ; Fox, N. A ; Kociok-Köhn, G ; Koshmak, K ; Laverock, J ; Pasquali, L ; Da Como, E</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-arxiv_primary_2001_080203</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Physics - Strongly Correlated Electrons</topic><toplevel>online_resources</toplevel><creatorcontrib>Sayers, C. J</creatorcontrib><creatorcontrib>Farrar, L. S</creatorcontrib><creatorcontrib>Bending, S. J</creatorcontrib><creatorcontrib>Cattelan, M</creatorcontrib><creatorcontrib>Jones, A. J. H</creatorcontrib><creatorcontrib>Fox, N. A</creatorcontrib><creatorcontrib>Kociok-Köhn, G</creatorcontrib><creatorcontrib>Koshmak, K</creatorcontrib><creatorcontrib>Laverock, J</creatorcontrib><creatorcontrib>Pasquali, L</creatorcontrib><creatorcontrib>Da Como, E</creatorcontrib><collection>arXiv.org</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sayers, C. J</au><au>Farrar, L. S</au><au>Bending, S. J</au><au>Cattelan, M</au><au>Jones, A. J. H</au><au>Fox, N. A</au><au>Kociok-Köhn, G</au><au>Koshmak, K</au><au>Laverock, J</au><au>Pasquali, L</au><au>Da Como, E</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Correlation between crystal purity and the charge density wave in 1$T$-VSe$_2</atitle><date>2020-01-22</date><risdate>2020</risdate><abstract>Phys. Rev. Materials 4, 025002 (2020) We examine the charge density wave (CDW) properties of 1$T$-VSe$_{2}$
crystals grown by chemical vapour transport (CVT) under varying conditions.
Specifically, we find that by lowering the growth temperature ($T_{\mathrm{g}}$
$<$ 630$^{\circ}$C), there is a significant increase in both the CDW transition
temperature and the residual resistance ratio (RRR) obtained from electrical
transport measurements. Using x-ray photoelectron spectroscopy (XPS), we
correlate the observed CDW properties with stoichiometry and the nature of
defects. In addition, we have optimized a method to grow ultra-high purity
1$T$-VSe$_{2}$ crystals with a CDW transition temperature, $T_{\mathrm{CDW}}$ =
(112.7 $\pm$ 0.8) K and maximum residual resistance ratio (RRR) $\approx$ 49,
which is the highest reported thus far. This work highlights the sensitivity of
the CDW in 1$T$-VSe$_{2}$ to defects and overall stoichiometry, and the
importance of controlling the crystal growth conditions of strongly-correlated
transition metal dichalcogenides.</abstract><doi>10.48550/arxiv.2001.08020</doi><oa>free_for_read</oa></addata></record> |
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title | Correlation between crystal purity and the charge density wave in 1$T$-VSe$_2 |
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