Correlation between crystal purity and the charge density wave in 1$T$-VSe$_2

Phys. Rev. Materials 4, 025002 (2020) We examine the charge density wave (CDW) properties of 1$T$-VSe$_{2}$ crystals grown by chemical vapour transport (CVT) under varying conditions. Specifically, we find that by lowering the growth temperature ($T_{\mathrm{g}}$ $

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Hauptverfasser: Sayers, C. J, Farrar, L. S, Bending, S. J, Cattelan, M, Jones, A. J. H, Fox, N. A, Kociok-Köhn, G, Koshmak, K, Laverock, J, Pasquali, L, Da Como, E
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creator Sayers, C. J
Farrar, L. S
Bending, S. J
Cattelan, M
Jones, A. J. H
Fox, N. A
Kociok-Köhn, G
Koshmak, K
Laverock, J
Pasquali, L
Da Como, E
description Phys. Rev. Materials 4, 025002 (2020) We examine the charge density wave (CDW) properties of 1$T$-VSe$_{2}$ crystals grown by chemical vapour transport (CVT) under varying conditions. Specifically, we find that by lowering the growth temperature ($T_{\mathrm{g}}$ $
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S ; Bending, S. J ; Cattelan, M ; Jones, A. J. H ; Fox, N. A ; Kociok-Köhn, G ; Koshmak, K ; Laverock, J ; Pasquali, L ; Da Como, E</creatorcontrib><description>Phys. Rev. Materials 4, 025002 (2020) We examine the charge density wave (CDW) properties of 1$T$-VSe$_{2}$ crystals grown by chemical vapour transport (CVT) under varying conditions. Specifically, we find that by lowering the growth temperature ($T_{\mathrm{g}}$ $&lt;$ 630$^{\circ}$C), there is a significant increase in both the CDW transition temperature and the residual resistance ratio (RRR) obtained from electrical transport measurements. Using x-ray photoelectron spectroscopy (XPS), we correlate the observed CDW properties with stoichiometry and the nature of defects. In addition, we have optimized a method to grow ultra-high purity 1$T$-VSe$_{2}$ crystals with a CDW transition temperature, $T_{\mathrm{CDW}}$ = (112.7 $\pm$ 0.8) K and maximum residual resistance ratio (RRR) $\approx$ 49, which is the highest reported thus far. This work highlights the sensitivity of the CDW in 1$T$-VSe$_{2}$ to defects and overall stoichiometry, and the importance of controlling the crystal growth conditions of strongly-correlated transition metal dichalcogenides.</description><identifier>DOI: 10.48550/arxiv.2001.08020</identifier><language>eng</language><subject>Physics - Strongly Correlated Electrons</subject><creationdate>2020-01</creationdate><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,781,886</link.rule.ids><linktorsrc>$$Uhttps://arxiv.org/abs/2001.08020$$EView_record_in_Cornell_University$$FView_record_in_$$GCornell_University$$Hfree_for_read</linktorsrc><backlink>$$Uhttps://doi.org/10.1103/PhysRevMaterials.4.025002$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.48550/arXiv.2001.08020$$DView paper in arXiv$$Hfree_for_read</backlink></links><search><creatorcontrib>Sayers, C. 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Specifically, we find that by lowering the growth temperature ($T_{\mathrm{g}}$ $&lt;$ 630$^{\circ}$C), there is a significant increase in both the CDW transition temperature and the residual resistance ratio (RRR) obtained from electrical transport measurements. Using x-ray photoelectron spectroscopy (XPS), we correlate the observed CDW properties with stoichiometry and the nature of defects. In addition, we have optimized a method to grow ultra-high purity 1$T$-VSe$_{2}$ crystals with a CDW transition temperature, $T_{\mathrm{CDW}}$ = (112.7 $\pm$ 0.8) K and maximum residual resistance ratio (RRR) $\approx$ 49, which is the highest reported thus far. 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Materials 4, 025002 (2020) We examine the charge density wave (CDW) properties of 1$T$-VSe$_{2}$ crystals grown by chemical vapour transport (CVT) under varying conditions. Specifically, we find that by lowering the growth temperature ($T_{\mathrm{g}}$ $&lt;$ 630$^{\circ}$C), there is a significant increase in both the CDW transition temperature and the residual resistance ratio (RRR) obtained from electrical transport measurements. Using x-ray photoelectron spectroscopy (XPS), we correlate the observed CDW properties with stoichiometry and the nature of defects. In addition, we have optimized a method to grow ultra-high purity 1$T$-VSe$_{2}$ crystals with a CDW transition temperature, $T_{\mathrm{CDW}}$ = (112.7 $\pm$ 0.8) K and maximum residual resistance ratio (RRR) $\approx$ 49, which is the highest reported thus far. This work highlights the sensitivity of the CDW in 1$T$-VSe$_{2}$ to defects and overall stoichiometry, and the importance of controlling the crystal growth conditions of strongly-correlated transition metal dichalcogenides.</abstract><doi>10.48550/arxiv.2001.08020</doi><oa>free_for_read</oa></addata></record>
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title Correlation between crystal purity and the charge density wave in 1$T$-VSe$_2
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