Disorder effects in InAs/GaSb topological insulator candidates

We report the theoretical investigation of the disorder effects on the bulk states of inverted InAs/GaSb quantum wells. As disorder sources we consider the interface roughness and donors/acceptors supplied by intentional doping. We use a \(\bm{k}\cdot\bm{p}\) approach combined with a numerical diago...

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Veröffentlicht in:	arXiv.org 2019-07
Hauptverfasser:	Ndebeka-Bandou, C, Faist, J
Format:	Artikel
Sprache:	eng
Schlagworte:	Donors (electronic) Eigenvectors Interface roughness Physics - Disordered Systems and Neural Networks Physics - Mesoscale and Nanoscale Physics Quantum wells
Online-Zugang:	Volltext
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