InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon

Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secure communications over long distances. In this work, we propose the monolithic growth of needlelike tapered InAs/InP qua...

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Veröffentlicht in:	arXiv.org 2019-11
Hauptverfasser:	Jaffal, Ali, Redjem, Walid, Regreny, Philippe, Hai Son Nguyen, Cueff, Sébastien, Letartre, Xavier, Patriarche, Gilles, Rousseau, Emmanuel, Cassabois, Guillaume, Gendry, Michel, Chauvin, Nicolas
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS Cryogenic temperature Diodes Divergence Electronic devices Emission analysis Epitaxial growth Far fields Field emission Gold Indium arsenides Indium phosphides Metal oxides Molecular beam epitaxy Nanowires Photon emission Physics - Applied Physics Physics - Mesoscale and Nanoscale Physics Quantum dots Silicon Silicon substrates Tapering Telecommunications
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