Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities

III-nitride-on-silicon L3 photonic crystal cavities with resonances down to 315 nm and quality factors (Q) up to 1085 at 337 nm have been demonstrated. The reduction of the quality factor with decreasing wavelength is investigated. Besides the quantum well absorption below 340 nm, a noteworthy contr...

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Veröffentlicht in:arXiv.org 2019-04
Hauptverfasser: Tabataba-Vakili, Farsane, Iannis Roland, Thi-Mo, Tran, Checoury, Xavier, Moustafa El Kurdi, Sauvage, Sébastien, Brimont, Christelle, Guillet, Thierry, Rennesson, Stéphanie, Duboz, Jean-Yves, Semond, Fabrice, Gayral, Bruno, Boucaud, Philippe
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creator Tabataba-Vakili, Farsane
Iannis Roland
Thi-Mo, Tran
Checoury, Xavier
Moustafa El Kurdi
Sauvage, Sébastien
Brimont, Christelle
Guillet, Thierry
Rennesson, Stéphanie
Duboz, Jean-Yves
Semond, Fabrice
Gayral, Bruno
Boucaud, Philippe
description III-nitride-on-silicon L3 photonic crystal cavities with resonances down to 315 nm and quality factors (Q) up to 1085 at 337 nm have been demonstrated. The reduction of the quality factor with decreasing wavelength is investigated. Besides the quantum well absorption below 340 nm, a noteworthy contribution is attributed to the residual absorption present in thin AlN layers grown on silicon, as measured by spectroscopic ellipsometry. This residual absorption ultimately limits the Q factor to around 2000 at 300 nm when no active layer is present.
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subjects Absorption
Holes
Nitrides
Photonic crystals
Physics - Applied Physics
Q factors
Quantum wells
Silicon substrates
Spectroellipsometry
Thin films
title Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities
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