Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities
III-nitride-on-silicon L3 photonic crystal cavities with resonances down to 315 nm and quality factors (Q) up to 1085 at 337 nm have been demonstrated. The reduction of the quality factor with decreasing wavelength is investigated. Besides the quantum well absorption below 340 nm, a noteworthy contr...
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creator | Tabataba-Vakili, Farsane Iannis Roland Thi-Mo, Tran Checoury, Xavier Moustafa El Kurdi Sauvage, Sébastien Brimont, Christelle Guillet, Thierry Rennesson, Stéphanie Duboz, Jean-Yves Semond, Fabrice Gayral, Bruno Boucaud, Philippe |
description | III-nitride-on-silicon L3 photonic crystal cavities with resonances down to 315 nm and quality factors (Q) up to 1085 at 337 nm have been demonstrated. The reduction of the quality factor with decreasing wavelength is investigated. Besides the quantum well absorption below 340 nm, a noteworthy contribution is attributed to the residual absorption present in thin AlN layers grown on silicon, as measured by spectroscopic ellipsometry. This residual absorption ultimately limits the Q factor to around 2000 at 300 nm when no active layer is present. |
doi_str_mv | 10.48550/arxiv.1904.03055 |
format | Article |
fullrecord | <record><control><sourceid>proquest_arxiv</sourceid><recordid>TN_cdi_arxiv_primary_1904_03055</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2205102924</sourcerecordid><originalsourceid>FETCH-LOGICAL-a524-34daf4c9ea95920288c6013e76f500c3662369f7c09838e8ec347aacb3e8c03e3</originalsourceid><addsrcrecordid>eNotkE1LAzEURYMgWGp_gCsDbnQx9U1eMpNZSvGjUBCh--GZZmzqNKlJWu2_t7au7ubcy-UwdlXCWGql4J7ij9uNywbkGBCUOmMDgVgWWgpxwUYprQBAVLVQCgfs8413ZHKIvHdrlym74DllnpYhZv5NO9tb_5GX_JZi2PoFRwDu13fceT6dTgvvcnQLWwRfJNc7c2hvliEH7ww3cZ8y9dzQzmVn0yU776hPdvSfQzZ_epxPXorZ6_N08jArSAlZoFxQJ01jqVGNAKG1qaBEW1edAjBYVQKrpqsNNBq11dagrInMO1ptAC0O2fVp9mii3US3prhv_4y0RyMH4uZEbGL42tqU21XYRn_41AoBqgTRCIm_GSRjSg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2205102924</pqid></control><display><type>article</type><title>Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities</title><source>arXiv.org</source><source>Free E- Journals</source><creator>Tabataba-Vakili, Farsane ; Iannis Roland ; Thi-Mo, Tran ; Checoury, Xavier ; Moustafa El Kurdi ; Sauvage, Sébastien ; Brimont, Christelle ; Guillet, Thierry ; Rennesson, Stéphanie ; Duboz, Jean-Yves ; Semond, Fabrice ; Gayral, Bruno ; Boucaud, Philippe</creator><creatorcontrib>Tabataba-Vakili, Farsane ; Iannis Roland ; Thi-Mo, Tran ; Checoury, Xavier ; Moustafa El Kurdi ; Sauvage, Sébastien ; Brimont, Christelle ; Guillet, Thierry ; Rennesson, Stéphanie ; Duboz, Jean-Yves ; Semond, Fabrice ; Gayral, Bruno ; Boucaud, Philippe</creatorcontrib><description>III-nitride-on-silicon L3 photonic crystal cavities with resonances down to 315 nm and quality factors (Q) up to 1085 at 337 nm have been demonstrated. The reduction of the quality factor with decreasing wavelength is investigated. Besides the quantum well absorption below 340 nm, a noteworthy contribution is attributed to the residual absorption present in thin AlN layers grown on silicon, as measured by spectroscopic ellipsometry. This residual absorption ultimately limits the Q factor to around 2000 at 300 nm when no active layer is present.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.1904.03055</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Absorption ; Holes ; Nitrides ; Photonic crystals ; Physics - Applied Physics ; Q factors ; Quantum wells ; Silicon substrates ; Spectroellipsometry ; Thin films</subject><ispartof>arXiv.org, 2019-04</ispartof><rights>2019. This work is published under http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,776,780,881,27902</link.rule.ids><backlink>$$Uhttps://doi.org/10.48550/arXiv.1904.03055$$DView paper in arXiv$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.1063/1.4997124$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink></links><search><creatorcontrib>Tabataba-Vakili, Farsane</creatorcontrib><creatorcontrib>Iannis Roland</creatorcontrib><creatorcontrib>Thi-Mo, Tran</creatorcontrib><creatorcontrib>Checoury, Xavier</creatorcontrib><creatorcontrib>Moustafa El Kurdi</creatorcontrib><creatorcontrib>Sauvage, Sébastien</creatorcontrib><creatorcontrib>Brimont, Christelle</creatorcontrib><creatorcontrib>Guillet, Thierry</creatorcontrib><creatorcontrib>Rennesson, Stéphanie</creatorcontrib><creatorcontrib>Duboz, Jean-Yves</creatorcontrib><creatorcontrib>Semond, Fabrice</creatorcontrib><creatorcontrib>Gayral, Bruno</creatorcontrib><creatorcontrib>Boucaud, Philippe</creatorcontrib><title>Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities</title><title>arXiv.org</title><description>III-nitride-on-silicon L3 photonic crystal cavities with resonances down to 315 nm and quality factors (Q) up to 1085 at 337 nm have been demonstrated. The reduction of the quality factor with decreasing wavelength is investigated. Besides the quantum well absorption below 340 nm, a noteworthy contribution is attributed to the residual absorption present in thin AlN layers grown on silicon, as measured by spectroscopic ellipsometry. This residual absorption ultimately limits the Q factor to around 2000 at 300 nm when no active layer is present.</description><subject>Absorption</subject><subject>Holes</subject><subject>Nitrides</subject><subject>Photonic crystals</subject><subject>Physics - Applied Physics</subject><subject>Q factors</subject><subject>Quantum wells</subject><subject>Silicon substrates</subject><subject>Spectroellipsometry</subject><subject>Thin films</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><sourceid>GOX</sourceid><recordid>eNotkE1LAzEURYMgWGp_gCsDbnQx9U1eMpNZSvGjUBCh--GZZmzqNKlJWu2_t7au7ubcy-UwdlXCWGql4J7ij9uNywbkGBCUOmMDgVgWWgpxwUYprQBAVLVQCgfs8413ZHKIvHdrlym74DllnpYhZv5NO9tb_5GX_JZi2PoFRwDu13fceT6dTgvvcnQLWwRfJNc7c2hvliEH7ww3cZ8y9dzQzmVn0yU776hPdvSfQzZ_epxPXorZ6_N08jArSAlZoFxQJ01jqVGNAKG1qaBEW1edAjBYVQKrpqsNNBq11dagrInMO1ptAC0O2fVp9mii3US3prhv_4y0RyMH4uZEbGL42tqU21XYRn_41AoBqgTRCIm_GSRjSg</recordid><startdate>20190405</startdate><enddate>20190405</enddate><creator>Tabataba-Vakili, Farsane</creator><creator>Iannis Roland</creator><creator>Thi-Mo, Tran</creator><creator>Checoury, Xavier</creator><creator>Moustafa El Kurdi</creator><creator>Sauvage, Sébastien</creator><creator>Brimont, Christelle</creator><creator>Guillet, Thierry</creator><creator>Rennesson, Stéphanie</creator><creator>Duboz, Jean-Yves</creator><creator>Semond, Fabrice</creator><creator>Gayral, Bruno</creator><creator>Boucaud, Philippe</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20190405</creationdate><title>Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities</title><author>Tabataba-Vakili, Farsane ; Iannis Roland ; Thi-Mo, Tran ; Checoury, Xavier ; Moustafa El Kurdi ; Sauvage, Sébastien ; Brimont, Christelle ; Guillet, Thierry ; Rennesson, Stéphanie ; Duboz, Jean-Yves ; Semond, Fabrice ; Gayral, Bruno ; Boucaud, Philippe</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a524-34daf4c9ea95920288c6013e76f500c3662369f7c09838e8ec347aacb3e8c03e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Absorption</topic><topic>Holes</topic><topic>Nitrides</topic><topic>Photonic crystals</topic><topic>Physics - Applied Physics</topic><topic>Q factors</topic><topic>Quantum wells</topic><topic>Silicon substrates</topic><topic>Spectroellipsometry</topic><topic>Thin films</topic><toplevel>online_resources</toplevel><creatorcontrib>Tabataba-Vakili, Farsane</creatorcontrib><creatorcontrib>Iannis Roland</creatorcontrib><creatorcontrib>Thi-Mo, Tran</creatorcontrib><creatorcontrib>Checoury, Xavier</creatorcontrib><creatorcontrib>Moustafa El Kurdi</creatorcontrib><creatorcontrib>Sauvage, Sébastien</creatorcontrib><creatorcontrib>Brimont, Christelle</creatorcontrib><creatorcontrib>Guillet, Thierry</creatorcontrib><creatorcontrib>Rennesson, Stéphanie</creatorcontrib><creatorcontrib>Duboz, Jean-Yves</creatorcontrib><creatorcontrib>Semond, Fabrice</creatorcontrib><creatorcontrib>Gayral, Bruno</creatorcontrib><creatorcontrib>Boucaud, Philippe</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tabataba-Vakili, Farsane</au><au>Iannis Roland</au><au>Thi-Mo, Tran</au><au>Checoury, Xavier</au><au>Moustafa El Kurdi</au><au>Sauvage, Sébastien</au><au>Brimont, Christelle</au><au>Guillet, Thierry</au><au>Rennesson, Stéphanie</au><au>Duboz, Jean-Yves</au><au>Semond, Fabrice</au><au>Gayral, Bruno</au><au>Boucaud, Philippe</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities</atitle><jtitle>arXiv.org</jtitle><date>2019-04-05</date><risdate>2019</risdate><eissn>2331-8422</eissn><abstract>III-nitride-on-silicon L3 photonic crystal cavities with resonances down to 315 nm and quality factors (Q) up to 1085 at 337 nm have been demonstrated. The reduction of the quality factor with decreasing wavelength is investigated. Besides the quantum well absorption below 340 nm, a noteworthy contribution is attributed to the residual absorption present in thin AlN layers grown on silicon, as measured by spectroscopic ellipsometry. This residual absorption ultimately limits the Q factor to around 2000 at 300 nm when no active layer is present.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.1904.03055</doi><oa>free_for_read</oa></addata></record> |
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subjects | Absorption Holes Nitrides Photonic crystals Physics - Applied Physics Q factors Quantum wells Silicon substrates Spectroellipsometry Thin films |
title | Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities |
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