A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields

Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as low-temperature AFM tunnel junctions that operate as spin-valves, or...

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Veröffentlicht in:	arXiv.org 2019-01
Hauptverfasser:	Han, Yan, Feng, Zexin, Shang, Shunli, Wang, Xiaoning, Hu, Zexiang, Wang, Jinhua, Zhu, Zengwei, Wang, Hui, Chen, Zuhuang, Hua, Hui, Lu, Wenkuo, Wang, Jingmin, Qin, Peixin, Guo, Huixin, Zhou, Xiaorong, Leng, Zhaoguogang, Liu, Zikui, Jiang, Chengbao, Coey, Michael, Liu, Zhiqi
Format:	Artikel
Sprache:	eng
Schlagworte:	Antiferromagnetism Electric fields Electrical junctions Electronic devices Heterostructures Magnetic fields Magnetism Magnetoresistance Magnetoresistivity Ohmic dissipation Physics - Applied Physics Physics - Materials Science Physics - Mesoscale and Nanoscale Physics Piezoelectricity Resistance heating Spin valves Switching Tunnel junctions
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