Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(110) surfaces
We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1-D) channels using patterned SiO\(_{2}\)-coated InP(001), InP(111)B, and InP(110) substrates to establish a scalable platform for topological superconductor networks. Top-view scanning electron microgr...
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| creator | Lee, Joon Sue Choi, Sukgeun Pendharkar, Mihir Pennachio, Dan J Markman, Brian Seas, Micheal Koelling, Sebastian Verheijen, Marcel A Lucas Casparis Petersson, Karl D Petkovic, Ivana Schaller, Vanessa Rodwell, Mark J W Marcus, Charles M Krogstrup, Peter Kouwenhoven, Leo P Erik P A M Bakkers Palmstrøm, Chris J |
| description | We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1-D) channels using patterned SiO\(_{2}\)-coated InP(001), InP(111)B, and InP(110) substrates to establish a scalable platform for topological superconductor networks. Top-view scanning electron micrographs show excellent surface selectivity and dependence of major facet planes on the substrate orientations and ridge directions, and the ratios of the surface energies of the major facet planes were estimated. Detailed structural properties and defects in the InAs nanowires (NWs) were characterized by transmission electron microscopic analysis of cross-sections perpendicular to the NW ridge direction and along the NW ridge direction. Electrical transport properties of the InAs NWs were investigated using Hall bars, a field effect mobility device, a quantum dot, and an Aharonov-Bohm loop device, which reflect the strong spin-orbit interaction and phase-coherent transport characteristic in the selectively grown InAs systems. This study demonstrates that selective-area chemical beam epitaxy is a scalable approach to realize semiconductor 1-D channel networks with the excellent surface selectivity and this material system is suitable for quantum transport studies. |
| doi_str_mv | 10.48550/arxiv.1808.04563 |
| format | Article |
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Top-view scanning electron micrographs show excellent surface selectivity and dependence of major facet planes on the substrate orientations and ridge directions, and the ratios of the surface energies of the major facet planes were estimated. Detailed structural properties and defects in the InAs nanowires (NWs) were characterized by transmission electron microscopic analysis of cross-sections perpendicular to the NW ridge direction and along the NW ridge direction. Electrical transport properties of the InAs NWs were investigated using Hall bars, a field effect mobility device, a quantum dot, and an Aharonov-Bohm loop device, which reflect the strong spin-orbit interaction and phase-coherent transport characteristic in the selectively grown InAs systems. This study demonstrates that selective-area chemical beam epitaxy is a scalable approach to realize semiconductor 1-D channel networks with the excellent surface selectivity and this material system is suitable for quantum transport studies.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.1808.04563</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Channels ; Dependence ; Electron micrographs ; Epitaxial growth ; Indium arsenides ; Indium phosphides ; Molecular beam epitaxy ; Nanowires ; Organic chemistry ; Physics - Mesoscale and Nanoscale Physics ; Planes ; Quantum dots ; Quantum transport ; Selectivity ; Spin-orbit interactions ; Substrates ; Topological superconductors ; Transport properties</subject><ispartof>arXiv.org, 2019-03</ispartof><rights>2019. This work is published under http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,778,782,883,27912</link.rule.ids><backlink>$$Uhttps://doi.org/10.1103/PhysRevMaterials.3.084606$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.48550/arXiv.1808.04563$$DView paper in arXiv$$Hfree_for_read</backlink></links><search><creatorcontrib>Lee, Joon Sue</creatorcontrib><creatorcontrib>Choi, Sukgeun</creatorcontrib><creatorcontrib>Pendharkar, Mihir</creatorcontrib><creatorcontrib>Pennachio, Dan J</creatorcontrib><creatorcontrib>Markman, Brian</creatorcontrib><creatorcontrib>Seas, Micheal</creatorcontrib><creatorcontrib>Koelling, Sebastian</creatorcontrib><creatorcontrib>Verheijen, Marcel A</creatorcontrib><creatorcontrib>Lucas Casparis</creatorcontrib><creatorcontrib>Petersson, Karl D</creatorcontrib><creatorcontrib>Petkovic, Ivana</creatorcontrib><creatorcontrib>Schaller, Vanessa</creatorcontrib><creatorcontrib>Rodwell, Mark J W</creatorcontrib><creatorcontrib>Marcus, Charles M</creatorcontrib><creatorcontrib>Krogstrup, Peter</creatorcontrib><creatorcontrib>Kouwenhoven, Leo P</creatorcontrib><creatorcontrib>Erik P A M Bakkers</creatorcontrib><creatorcontrib>Palmstrøm, Chris J</creatorcontrib><title>Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(110) surfaces</title><title>arXiv.org</title><description>We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1-D) channels using patterned SiO\(_{2}\)-coated InP(001), InP(111)B, and InP(110) substrates to establish a scalable platform for topological superconductor networks. Top-view scanning electron micrographs show excellent surface selectivity and dependence of major facet planes on the substrate orientations and ridge directions, and the ratios of the surface energies of the major facet planes were estimated. Detailed structural properties and defects in the InAs nanowires (NWs) were characterized by transmission electron microscopic analysis of cross-sections perpendicular to the NW ridge direction and along the NW ridge direction. Electrical transport properties of the InAs NWs were investigated using Hall bars, a field effect mobility device, a quantum dot, and an Aharonov-Bohm loop device, which reflect the strong spin-orbit interaction and phase-coherent transport characteristic in the selectively grown InAs systems. This study demonstrates that selective-area chemical beam epitaxy is a scalable approach to realize semiconductor 1-D channel networks with the excellent surface selectivity and this material system is suitable for quantum transport studies.</description><subject>Channels</subject><subject>Dependence</subject><subject>Electron micrographs</subject><subject>Epitaxial growth</subject><subject>Indium arsenides</subject><subject>Indium phosphides</subject><subject>Molecular beam epitaxy</subject><subject>Nanowires</subject><subject>Organic chemistry</subject><subject>Physics - Mesoscale and Nanoscale Physics</subject><subject>Planes</subject><subject>Quantum dots</subject><subject>Quantum transport</subject><subject>Selectivity</subject><subject>Spin-orbit interactions</subject><subject>Substrates</subject><subject>Topological superconductors</subject><subject>Transport properties</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GOX</sourceid><recordid>eNotkF1LwzAUhoMgOOZ-gFcGvHGwzpOkadPLKX4MBgruvqTpqcto05psc7v1l1u3XZ1zOA8vvA8hNwymsZISHrTf292UKVBTiGUiLsiAC8EiFXN-RUYhrAGAJymXUgzI7yfWaDZ2h5H2qKlZYWONrmmBuqHY2Y3eH2hbUeuirtYO6dzNAm0dRqVt0AXbup42K-0c1oF--fbH9e8e-7gHYOPJcWOMjR8nVLvyfMKYhq2vtMFwTS4rXQccneeQLF-el09v0eL9df40W0Ra8jiS2qRVAqiUSRjLEkjTQkrOU4YmSSsBqowLrLQoMOOVkjFkpSoTYFz3HKvEkNyeYo-C8s7bRvtD_i8qP4rqibsT0fn2e4thk6_bre_rhZxDxtMMJIvFH07baEQ</recordid><startdate>20190314</startdate><enddate>20190314</enddate><creator>Lee, Joon Sue</creator><creator>Choi, Sukgeun</creator><creator>Pendharkar, Mihir</creator><creator>Pennachio, Dan J</creator><creator>Markman, Brian</creator><creator>Seas, Micheal</creator><creator>Koelling, Sebastian</creator><creator>Verheijen, Marcel A</creator><creator>Lucas Casparis</creator><creator>Petersson, Karl D</creator><creator>Petkovic, Ivana</creator><creator>Schaller, Vanessa</creator><creator>Rodwell, Mark J W</creator><creator>Marcus, Charles M</creator><creator>Krogstrup, Peter</creator><creator>Kouwenhoven, Leo P</creator><creator>Erik P A M Bakkers</creator><creator>Palmstrøm, Chris J</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20190314</creationdate><title>Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(110) surfaces</title><author>Lee, Joon Sue ; Choi, Sukgeun ; Pendharkar, Mihir ; Pennachio, Dan J ; Markman, Brian ; Seas, Micheal ; Koelling, Sebastian ; Verheijen, Marcel A ; Lucas Casparis ; Petersson, Karl D ; Petkovic, Ivana ; Schaller, Vanessa ; Rodwell, Mark J W ; Marcus, Charles M ; Krogstrup, Peter ; Kouwenhoven, Leo P ; Erik P A M Bakkers ; Palmstrøm, Chris J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a524-5ac7f60e88c61196077b552271ec67f308d4befa3be92f85409d8d6012ab551f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Channels</topic><topic>Dependence</topic><topic>Electron micrographs</topic><topic>Epitaxial growth</topic><topic>Indium arsenides</topic><topic>Indium phosphides</topic><topic>Molecular beam epitaxy</topic><topic>Nanowires</topic><topic>Organic chemistry</topic><topic>Physics - Mesoscale and Nanoscale Physics</topic><topic>Planes</topic><topic>Quantum dots</topic><topic>Quantum transport</topic><topic>Selectivity</topic><topic>Spin-orbit interactions</topic><topic>Substrates</topic><topic>Topological superconductors</topic><topic>Transport properties</topic><toplevel>online_resources</toplevel><creatorcontrib>Lee, Joon Sue</creatorcontrib><creatorcontrib>Choi, Sukgeun</creatorcontrib><creatorcontrib>Pendharkar, Mihir</creatorcontrib><creatorcontrib>Pennachio, Dan J</creatorcontrib><creatorcontrib>Markman, Brian</creatorcontrib><creatorcontrib>Seas, Micheal</creatorcontrib><creatorcontrib>Koelling, Sebastian</creatorcontrib><creatorcontrib>Verheijen, Marcel A</creatorcontrib><creatorcontrib>Lucas Casparis</creatorcontrib><creatorcontrib>Petersson, Karl D</creatorcontrib><creatorcontrib>Petkovic, Ivana</creatorcontrib><creatorcontrib>Schaller, Vanessa</creatorcontrib><creatorcontrib>Rodwell, Mark J W</creatorcontrib><creatorcontrib>Marcus, Charles M</creatorcontrib><creatorcontrib>Krogstrup, Peter</creatorcontrib><creatorcontrib>Kouwenhoven, Leo P</creatorcontrib><creatorcontrib>Erik P A M Bakkers</creatorcontrib><creatorcontrib>Palmstrøm, Chris J</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, Joon Sue</au><au>Choi, Sukgeun</au><au>Pendharkar, Mihir</au><au>Pennachio, Dan J</au><au>Markman, Brian</au><au>Seas, Micheal</au><au>Koelling, Sebastian</au><au>Verheijen, Marcel A</au><au>Lucas Casparis</au><au>Petersson, Karl D</au><au>Petkovic, Ivana</au><au>Schaller, Vanessa</au><au>Rodwell, Mark J W</au><au>Marcus, Charles M</au><au>Krogstrup, Peter</au><au>Kouwenhoven, Leo P</au><au>Erik P A M Bakkers</au><au>Palmstrøm, Chris J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(110) surfaces</atitle><jtitle>arXiv.org</jtitle><date>2019-03-14</date><risdate>2019</risdate><eissn>2331-8422</eissn><abstract>We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1-D) channels using patterned SiO\(_{2}\)-coated InP(001), InP(111)B, and InP(110) substrates to establish a scalable platform for topological superconductor networks. Top-view scanning electron micrographs show excellent surface selectivity and dependence of major facet planes on the substrate orientations and ridge directions, and the ratios of the surface energies of the major facet planes were estimated. Detailed structural properties and defects in the InAs nanowires (NWs) were characterized by transmission electron microscopic analysis of cross-sections perpendicular to the NW ridge direction and along the NW ridge direction. Electrical transport properties of the InAs NWs were investigated using Hall bars, a field effect mobility device, a quantum dot, and an Aharonov-Bohm loop device, which reflect the strong spin-orbit interaction and phase-coherent transport characteristic in the selectively grown InAs systems. This study demonstrates that selective-area chemical beam epitaxy is a scalable approach to realize semiconductor 1-D channel networks with the excellent surface selectivity and this material system is suitable for quantum transport studies.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.1808.04563</doi><oa>free_for_read</oa></addata></record> |
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| subjects | Channels Dependence Electron micrographs Epitaxial growth Indium arsenides Indium phosphides Molecular beam epitaxy Nanowires Organic chemistry Physics - Mesoscale and Nanoscale Physics Planes Quantum dots Quantum transport Selectivity Spin-orbit interactions Substrates Topological superconductors Transport properties |
| title | Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(110) surfaces |
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