Low cost Ge/Si virtual substrate through dislocation trapping by nanovoids

Inter. Conf. Si Epi. heterostructures. procceding, ICSI10, May 2017, Coventry, United Kingdom A low-cost method to reduce the threading disloca-tions density (TDD) in relaxed germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si sub-strate was treated with post epitaxial proc...

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Hauptverfasser:	Bioud, Youcef A, Boucherif, Abderraouf, Paradis, Etienne, Soltani, Ali, Drouin, Dominique, Arès, Richard
Format:	Artikel
Sprache:	eng
Schlagworte:	Physics - Materials Science
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