Low cost Ge/Si virtual substrate through dislocation trapping by nanovoids

Low cost Ge/Si virtual substrate through dislocation trapping by nanovoids

Inter. Conf. Si Epi. heterostructures. procceding, ICSI10, May 2017, Coventry, United Kingdom A low-cost method to reduce the threading disloca-tions density (TDD) in relaxed germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si sub-strate was treated with post epitaxial proc...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Bioud, Youcef A, Boucherif, Abderraouf, Paradis, Etienne, Soltani, Ali, Drouin, Dominique, Arès, Richard
Format: Artikel
Sprache:eng
Schlagworte:
Physics - Materials Science
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Inter. Conf. Si Epi. heterostructures. procceding, ICSI10, May 2017, Coventry, United Kingdom A low-cost method to reduce the threading disloca-tions density (TDD) in relaxed germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si sub-strate was treated with post epitaxial process to create a region with a high density of nanovoids in Ge layer which act as a barrier for threading dislocations propagation .
DOI:10.48550/arxiv.1805.05621