Valley qubit in gated MoS$_2$ monolayer quantum dot

Phys. Rev. B 97, 155412 (2018) The aim of presented research is to design a nanodevice, based on a MoS$_2$ monolayer, performing operations on a well-defined valley qubit. We show how to confine an electron in a gate induced quantum dot within the monolayer, and to perform the NOT operation on its v...

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Hauptverfasser:	Pawłowski, J, Żebrowski, D, Bednarek, S
Format:	Artikel
Sprache:	eng
Schlagworte:	Physics - Mesoscale and Nanoscale Physics
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