Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells
Cu2ZnSnS(e)4 (CZTS(e)) solar cells have attracted much attention due to the elemental abundance and the non-toxicity. However, the record efficiency of 12.6% for Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is much lower than that of Cu(In,Ga)Se2 (CIGS) solar cells. One crucial reason is the recombination at...
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description | Cu2ZnSnS(e)4 (CZTS(e)) solar cells have attracted much attention due to the elemental abundance and the non-toxicity. However, the record efficiency of 12.6% for Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is much lower than that of Cu(In,Ga)Se2 (CIGS) solar cells. One crucial reason is the recombination at interfaces. In recent years, large amount investigations have been done to analyze the interfacial problems and improve the interfacial properties via a variety of methods. This paper gives a review of progresses on interfaces of CZTS(e) solar cells, including: (1) the band alignment optimization at buffer/CZTS(e) interface, (2) tailoring the thickness of MoS(e)2 interfacial layers between CZTS(e) absorber and Mo back contact, (3) the passivation of rear interface, (4) the passivation of front interface, and (5) the etching of secondary phases. |
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However, the record efficiency of 12.6% for Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is much lower than that of Cu(In,Ga)Se2 (CIGS) solar cells. One crucial reason is the recombination at interfaces. In recent years, large amount investigations have been done to analyze the interfacial problems and improve the interfacial properties via a variety of methods. This paper gives a review of progresses on interfaces of CZTS(e) solar cells, including: (1) the band alignment optimization at buffer/CZTS(e) interface, (2) tailoring the thickness of MoS(e)2 interfacial layers between CZTS(e) absorber and Mo back contact, (3) the passivation of rear interface, (4) the passivation of front interface, and (5) the etching of secondary phases.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.1711.09249</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Cadmium telluride ; Copper indium gallium selenides ; Copper zinc tin sulfide ; Interfacial properties ; Optimization ; Passivity ; Photovoltaic cells ; Physics - Applied Physics ; Solar cells ; Thickness ; Thin films ; Toxicity</subject><ispartof>arXiv.org, 2017-11</ispartof><rights>2017. This work is published under http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (the “License”). 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This paper gives a review of progresses on interfaces of CZTS(e) solar cells, including: (1) the band alignment optimization at buffer/CZTS(e) interface, (2) tailoring the thickness of MoS(e)2 interfacial layers between CZTS(e) absorber and Mo back contact, (3) the passivation of rear interface, (4) the passivation of front interface, and (5) the etching of secondary phases.</description><subject>Cadmium telluride</subject><subject>Copper indium gallium selenides</subject><subject>Copper zinc tin sulfide</subject><subject>Interfacial properties</subject><subject>Optimization</subject><subject>Passivity</subject><subject>Photovoltaic cells</subject><subject>Physics - Applied Physics</subject><subject>Solar cells</subject><subject>Thickness</subject><subject>Thin films</subject><subject>Toxicity</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><sourceid>GOX</sourceid><recordid>eNotj7FOwzAURS0kJKrSD2DCEgsMKbafHTsjiqBUqsTQTizRw7WJS5oUO0Hw94SW6Q7n6uoeQq44m0ujFLvH-B2-5lxzPmeFkMUZmQgAnhkpxAWZpbRjjIlcC6VgQpbLtnfRo3WJdp7W4b2mzvtgg2t7-uHSSEPvaDmI13bdrm_dnaR9HVrqQ7OnqWswUuuaJl2Sc49NcrP_nJLN0-OmfM5WL4tl-bDKUAnIbGGFhRwx3-YMmOTKer4FocEgopLIvOGFH6kB_YbC545xbrhEbZCBhCm5Ps0ePatDDHuMP9Wfb3X0HRs3p8Yhdp_DaFDtuiG246dKMM21VroA-AWeMFaW</recordid><startdate>20171125</startdate><enddate>20171125</enddate><creator>Gao, Shoushuai</creator><creator>Jiang, Zhenwu</creator><creator>Wu, Li</creator><creator>Ao, Jianping</creator><creator>Zeng, Yu</creator><creator>Sun, Yun</creator><creator>Zhang, Yi</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20171125</creationdate><title>Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells</title><author>Gao, Shoushuai ; 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However, the record efficiency of 12.6% for Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is much lower than that of Cu(In,Ga)Se2 (CIGS) solar cells. One crucial reason is the recombination at interfaces. In recent years, large amount investigations have been done to analyze the interfacial problems and improve the interfacial properties via a variety of methods. This paper gives a review of progresses on interfaces of CZTS(e) solar cells, including: (1) the band alignment optimization at buffer/CZTS(e) interface, (2) tailoring the thickness of MoS(e)2 interfacial layers between CZTS(e) absorber and Mo back contact, (3) the passivation of rear interface, (4) the passivation of front interface, and (5) the etching of secondary phases.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.1711.09249</doi><oa>free_for_read</oa></addata></record> |
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subjects | Cadmium telluride Copper indium gallium selenides Copper zinc tin sulfide Interfacial properties Optimization Passivity Photovoltaic cells Physics - Applied Physics Solar cells Thickness Thin films Toxicity |
title | Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells |
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