Engineering Hybrid Epitaxial InAsSb/Al Nanowire Materials for Stronger Topological Protection
The combination of strong spin-orbit coupling, large \(g\)-factors, and the coupling to a superconductor can be used to create a topologically protected state in a semiconductor nanowire. Here we report on growth and characterization of hybrid epitaxial InAsSb/Al nanowires, with varying composition...
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| creator | Sestoft, Joachim E Kanne, Thomas Aske Nørskov Gejl Merlin von Soosten Yodh, Jeremy S Sherman, Daniel Tarasinski, Brian Wimmer, Michael Johnson, Erik Deng, Mingtang Nygård, Jesper Thomas Sand Jespersen Marcus, Charles M Krogstrup, Peter |
| description | The combination of strong spin-orbit coupling, large \(g\)-factors, and the coupling to a superconductor can be used to create a topologically protected state in a semiconductor nanowire. Here we report on growth and characterization of hybrid epitaxial InAsSb/Al nanowires, with varying composition and crystal structure. We find the strongest spin-orbit interaction at intermediate compositions in zincblende InAs\(_{1-x}\)Sb\(_{x}\) nanowires, exceeding that of both InAs and InSb materials, confirming recent theoretical studies \cite{winkler2016topological}. We show that the epitaxial InAsSb/Al interfaces allows for a hard induced superconducting gap and 2\(e\) transport in Coulomb charging experiments, similar to experiments on InAs/Al and InSb/Al materials, and find measurements consistent with topological phase transitions at low magnetic fields due to large effective \(g\)-factors. Finally we present a method to grow pure wurtzite InAsSb nanowires which are predicted to exhibit even stronger spin-orbit coupling than the zincblende structure. |
| doi_str_mv | 10.48550/arxiv.1711.06864 |
| format | Article |
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Here we report on growth and characterization of hybrid epitaxial InAsSb/Al nanowires, with varying composition and crystal structure. We find the strongest spin-orbit interaction at intermediate compositions in zincblende InAs\(_{1-x}\)Sb\(_{x}\) nanowires, exceeding that of both InAs and InSb materials, confirming recent theoretical studies \cite{winkler2016topological}. We show that the epitaxial InAsSb/Al interfaces allows for a hard induced superconducting gap and 2\(e\) transport in Coulomb charging experiments, similar to experiments on InAs/Al and InSb/Al materials, and find measurements consistent with topological phase transitions at low magnetic fields due to large effective \(g\)-factors. 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| subjects | Composition Crystal structure Epitaxial growth Indium antimonide Indium arsenides Intermetallic compounds Nanowires Phase transitions Physics - Mesoscale and Nanoscale Physics Spin-orbit interactions Topology Wurtzite Zincblende |
| title | Engineering Hybrid Epitaxial InAsSb/Al Nanowire Materials for Stronger Topological Protection |
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