Unified mechanism of the surface Fermi level pinning in III-As nanowires
Fermi level pinning at the oxidized (110) surfaces of III-As nanowires (GaAs, InAs, InGaAs, AlGaAs) is studied. Using scanning gradient Kelvin probe microscopy, we show that the Fermi level at oxidized cleavage surfaces of ternary Al\(_{x}\)Ga\(_{1-x}\)As (0\(\le\)x\(\le\)0.45) and Ga\(_{x}\)In\(_{1...
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| creator | Alekseev, P A Dunaevskiy, M S Cirlin, G E Reznik, R R Smirnov, A N V Yu Davydov Berkovits, V L |
| description | Fermi level pinning at the oxidized (110) surfaces of III-As nanowires (GaAs, InAs, InGaAs, AlGaAs) is studied. Using scanning gradient Kelvin probe microscopy, we show that the Fermi level at oxidized cleavage surfaces of ternary Al\(_{x}\)Ga\(_{1-x}\)As (0\(\le\)x\(\le\)0.45) and Ga\(_{x}\)In\(_{1-x}\)As (0\(\le\)x\(\le\)1) alloys is pinned at the same position of 4.8\(\pm\)0.1 eV with regard to the vacuum level. The finding implies a unified mechanism of the Fermi level pinning for such surfaces. Further investigation, performed by Raman scattering and photoluminescence spectroscopy, shows that photooxidation of the Al\(_{x}\)Ga\(_{1-x}\)As and Ga\(_{x}\)In\(_{1-x}\)As nanowires leads to the accumulation of an excess arsenic on their crystal surfaces which is accompanied by a strong decrease of the band-edge photoluminescence intensity. We conclude that the surface excess arsenic in crystalline or amorphous forms is responsible for the Fermi level pinning at oxidized (110) surfaces of III-As nanowires. |
| doi_str_mv | 10.48550/arxiv.1710.06227 |
| format | Article |
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Using scanning gradient Kelvin probe microscopy, we show that the Fermi level at oxidized cleavage surfaces of ternary Al\(_{x}\)Ga\(_{1-x}\)As (0\(\le\)x\(\le\)0.45) and Ga\(_{x}\)In\(_{1-x}\)As (0\(\le\)x\(\le\)1) alloys is pinned at the same position of 4.8\(\pm\)0.1 eV with regard to the vacuum level. The finding implies a unified mechanism of the Fermi level pinning for such surfaces. Further investigation, performed by Raman scattering and photoluminescence spectroscopy, shows that photooxidation of the Al\(_{x}\)Ga\(_{1-x}\)As and Ga\(_{x}\)In\(_{1-x}\)As nanowires leads to the accumulation of an excess arsenic on their crystal surfaces which is accompanied by a strong decrease of the band-edge photoluminescence intensity. We conclude that the surface excess arsenic in crystalline or amorphous forms is responsible for the Fermi level pinning at oxidized (110) surfaces of III-As nanowires.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.1710.06227</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Arsenic ; Crystal surfaces ; Fermi level ; Fermi surfaces ; Indium gallium arsenides ; Nanowires ; Photoluminescence ; Photooxidation ; Physics - Mesoscale and Nanoscale Physics ; Pinning ; Raman spectra ; Scanning electron microscopy ; Silicon</subject><ispartof>arXiv.org, 2017-11</ispartof><rights>2017. This work is published under http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (the “License”). 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Using scanning gradient Kelvin probe microscopy, we show that the Fermi level at oxidized cleavage surfaces of ternary Al\(_{x}\)Ga\(_{1-x}\)As (0\(\le\)x\(\le\)0.45) and Ga\(_{x}\)In\(_{1-x}\)As (0\(\le\)x\(\le\)1) alloys is pinned at the same position of 4.8\(\pm\)0.1 eV with regard to the vacuum level. The finding implies a unified mechanism of the Fermi level pinning for such surfaces. Further investigation, performed by Raman scattering and photoluminescence spectroscopy, shows that photooxidation of the Al\(_{x}\)Ga\(_{1-x}\)As and Ga\(_{x}\)In\(_{1-x}\)As nanowires leads to the accumulation of an excess arsenic on their crystal surfaces which is accompanied by a strong decrease of the band-edge photoluminescence intensity. We conclude that the surface excess arsenic in crystalline or amorphous forms is responsible for the Fermi level pinning at oxidized (110) surfaces of III-As nanowires.</description><subject>Arsenic</subject><subject>Crystal surfaces</subject><subject>Fermi level</subject><subject>Fermi surfaces</subject><subject>Indium gallium arsenides</subject><subject>Nanowires</subject><subject>Photoluminescence</subject><subject>Photooxidation</subject><subject>Physics - Mesoscale and Nanoscale Physics</subject><subject>Pinning</subject><subject>Raman spectra</subject><subject>Scanning electron microscopy</subject><subject>Silicon</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GOX</sourceid><recordid>eNotkFFLwzAUhYMgOOZ-gE8GfO68uWmS9nEM5woDX-ZzSdvEZbRpTdap_966-XTgcrh83yHkgcEyzYSAZx2-3XnJ1HQAiahuyAw5Z0mWIt6RRYxHAECpUAg-I9t376wzDe1MfdDexY72lp4OhsYxWF0bujGhc7Q1Z9PSwXnv_Ad1nhZFkawi9dr3Xy6YeE9urW6jWfznnOw3L_v1Ntm9vRbr1S7RAvkEYYBbnalGSDAZl7WSLJWcaUgnIAkMUaKVWZ3nua2zVKBiFeRNxXKldcXn5PH69qJZDsF1OvyUf7rlRXdqPF0bQ-g_RxNP5bEfg5-YSgTFc2Qw7fEL3bVVbw</recordid><startdate>20171117</startdate><enddate>20171117</enddate><creator>Alekseev, P A</creator><creator>Dunaevskiy, M S</creator><creator>Cirlin, G E</creator><creator>Reznik, R R</creator><creator>Smirnov, A N</creator><creator>V Yu Davydov</creator><creator>Berkovits, V L</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20171117</creationdate><title>Unified mechanism of the surface Fermi level pinning in III-As nanowires</title><author>Alekseev, P A ; Dunaevskiy, M S ; Cirlin, G E ; Reznik, R R ; Smirnov, A N ; V Yu Davydov ; Berkovits, V L</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a523-84e03fa87d560e836c7614631a042556012262f68c999fc845271b09db197aab3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Arsenic</topic><topic>Crystal surfaces</topic><topic>Fermi level</topic><topic>Fermi surfaces</topic><topic>Indium gallium arsenides</topic><topic>Nanowires</topic><topic>Photoluminescence</topic><topic>Photooxidation</topic><topic>Physics - Mesoscale and Nanoscale Physics</topic><topic>Pinning</topic><topic>Raman spectra</topic><topic>Scanning electron microscopy</topic><topic>Silicon</topic><toplevel>online_resources</toplevel><creatorcontrib>Alekseev, P A</creatorcontrib><creatorcontrib>Dunaevskiy, M S</creatorcontrib><creatorcontrib>Cirlin, G E</creatorcontrib><creatorcontrib>Reznik, R R</creatorcontrib><creatorcontrib>Smirnov, A N</creatorcontrib><creatorcontrib>V Yu Davydov</creatorcontrib><creatorcontrib>Berkovits, V L</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Alekseev, P A</au><au>Dunaevskiy, M S</au><au>Cirlin, G E</au><au>Reznik, R R</au><au>Smirnov, A N</au><au>V Yu Davydov</au><au>Berkovits, V L</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Unified mechanism of the surface Fermi level pinning in III-As nanowires</atitle><jtitle>arXiv.org</jtitle><date>2017-11-17</date><risdate>2017</risdate><eissn>2331-8422</eissn><abstract>Fermi level pinning at the oxidized (110) surfaces of III-As nanowires (GaAs, InAs, InGaAs, AlGaAs) is studied. Using scanning gradient Kelvin probe microscopy, we show that the Fermi level at oxidized cleavage surfaces of ternary Al\(_{x}\)Ga\(_{1-x}\)As (0\(\le\)x\(\le\)0.45) and Ga\(_{x}\)In\(_{1-x}\)As (0\(\le\)x\(\le\)1) alloys is pinned at the same position of 4.8\(\pm\)0.1 eV with regard to the vacuum level. The finding implies a unified mechanism of the Fermi level pinning for such surfaces. Further investigation, performed by Raman scattering and photoluminescence spectroscopy, shows that photooxidation of the Al\(_{x}\)Ga\(_{1-x}\)As and Ga\(_{x}\)In\(_{1-x}\)As nanowires leads to the accumulation of an excess arsenic on their crystal surfaces which is accompanied by a strong decrease of the band-edge photoluminescence intensity. We conclude that the surface excess arsenic in crystalline or amorphous forms is responsible for the Fermi level pinning at oxidized (110) surfaces of III-As nanowires.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.1710.06227</doi><oa>free_for_read</oa></addata></record> |
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| subjects | Arsenic Crystal surfaces Fermi level Fermi surfaces Indium gallium arsenides Nanowires Photoluminescence Photooxidation Physics - Mesoscale and Nanoscale Physics Pinning Raman spectra Scanning electron microscopy Silicon |
| title | Unified mechanism of the surface Fermi level pinning in III-As nanowires |
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