Designing 3D topological insulators by 2D-Xene (X = Ge, Sn) sheet functionalization in the GaGeTe-type structures

State-of-the-art theoretical studies anticipate a 2D Dirac system in the "heavy" analogues of graphene, free-standing buckled honeycomb-like Xenes (X = Si, Ge, Sn, Pb, etc.). Herewith a structurally and electronically resembling 2D sheet, which can be regarded as Xene functionalized by cov...

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Veröffentlicht in:arXiv.org 2017-04
Hauptverfasser: Pielnhofer, Florian, Menshchikova, Tatiana V, Rusinov, Igor P, Zeugner, Alexander, Irina Yu Sklyadneva, Heid, Rolf, Bohnen, Klaus-Peter, Golub, Pavlo, Baranov, Alexey I, Chulkov, Eugeni V, Pfitzner, Arno, Ruckd, Michael, Isaeva, Anna
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Sprache:eng
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