Quantitative analysis of the influence of keV He ion bombardment on exchange bias layer systems

The mechanism of ion bombardment induced magnetic patterning of exchange bias layer systems for creating engineered magnetic stray field landscapes is still unclear. We compare results from vectorial magneto-optic Kerr effect measurements to a recently proposed model with time dependent rotatable ma...

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Veröffentlicht in:arXiv.org 2017-04
Hauptverfasser: Müglich, Nicolas David, Götz, Gerhard, Gaul, Alexander, Meyl, Markus, Reiss, Günter, Kuschel, Timo, Ehresmann, Arno
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Götz, Gerhard
Gaul, Alexander
Meyl, Markus
Reiss, Günter
Kuschel, Timo
Ehresmann, Arno
description The mechanism of ion bombardment induced magnetic patterning of exchange bias layer systems for creating engineered magnetic stray field landscapes is still unclear. We compare results from vectorial magneto-optic Kerr effect measurements to a recently proposed model with time dependent rotatable magnetic anisotropy. Results show massive reduction of rotational magnetic anisotropy compared to all other magnetic anisotropies. We disprove the assumption of comparable weakening of all magnetic anisotropies and show that ion bombardment mainly influences smaller grains in the antiferromagnet.
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subjects Antiferromagnetism
Bias
Ion bombardment
Ions
Kerr magnetooptical effect
Landscape
Magnetic anisotropy
Physics - Materials Science
Quantitative analysis
Time dependence
title Quantitative analysis of the influence of keV He ion bombardment on exchange bias layer systems
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