Strain-controlled responsiveness of slave half-doped manganite La0.5Sr0.5MnO3 layers inserted in BaTiO3 ferroelectric tunnel junctions

Insertion of layers displaying field-induced metal-to-insulator (M/I) transition in ferroelectric tunnel junctions (FTJs) has received attention as a potentially useful way to enlarge junction tunnel electroresistance (TER). Half-doped manganites being at the verge of metal-insulator character are t...

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Veröffentlicht in:	arXiv.org 2016-12
Hauptverfasser:	Radaelli, Greta, Gutiérrez, Diego, Qian, Mengdi, Fina, Ignasi, Sánchez, Florencio, Baldrati, Lorenzo, Heidler, Jakoba, Piamonteze, Cinthia, Bertacco, Riccardo, Fontcuberta, Josep
Format:	Artikel
Sprache:	eng
Schlagworte:	Barium titanates Compressive properties Electrical junctions Ferroelectric materials Ferroelectricity Insulators Manganites Materials selection Phase diagrams Physics - Materials Science Strontium titanates Substrates Tunnel junctions
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