Strain-controlled responsiveness of slave half-doped manganite La0.5Sr0.5MnO3 layers inserted in BaTiO3 ferroelectric tunnel junctions
Insertion of layers displaying field-induced metal-to-insulator (M/I) transition in ferroelectric tunnel junctions (FTJs) has received attention as a potentially useful way to enlarge junction tunnel electroresistance (TER). Half-doped manganites being at the verge of metal-insulator character are t...
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| creator | Radaelli, Greta Gutiérrez, Diego Qian, Mengdi Fina, Ignasi Sánchez, Florencio Baldrati, Lorenzo Heidler, Jakoba Piamonteze, Cinthia Bertacco, Riccardo Fontcuberta, Josep |
| description | Insertion of layers displaying field-induced metal-to-insulator (M/I) transition in ferroelectric tunnel junctions (FTJs) has received attention as a potentially useful way to enlarge junction tunnel electroresistance (TER). Half-doped manganites being at the verge of metal-insulator character are thus good candidates to be slave layers in FTJs. However, the phase diagram of these oxides is extremely sensitive to strain and thus can be radically different when integrated in epitaxial FTJs. Here we report a systematic study of large-area (A = 4 to 100 um2) Pt/La0.5Sr0.5MnO3/BaTiO3/La0.7Sr0.3MnO3 (Pt/HD/BTO/LSMO) FTJs, having different thicknesses of the ferroelectric (2-3nm) and HD layers (1-2nm), grown on substrates imposing either tensile (SrTiO3) or compressive (LaAlO3) strains. Room-temperature electric characterization of the FTJs shows polarization-controlled ON/ OFF states. Clear evidences of field-induced M/I transition (difference between junction resistance in OFF and ON state is increased of more than one order of magnitude) are observed in junctions prepared on SrTiO3 but the HD layer is generally metallic on LaAlO3. Moreover, the M/I transition is only confined in an interfacial layer of the slave film thus entailing an overall reduction of TER. The orderly results reported here give some hints towards selection of HD materials and substrates for optimal FTJ responsiveness. |
| doi_str_mv | 10.48550/arxiv.1612.00679 |
| format | Article |
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Half-doped manganites being at the verge of metal-insulator character are thus good candidates to be slave layers in FTJs. However, the phase diagram of these oxides is extremely sensitive to strain and thus can be radically different when integrated in epitaxial FTJs. Here we report a systematic study of large-area (A = 4 to 100 um2) Pt/La0.5Sr0.5MnO3/BaTiO3/La0.7Sr0.3MnO3 (Pt/HD/BTO/LSMO) FTJs, having different thicknesses of the ferroelectric (2-3nm) and HD layers (1-2nm), grown on substrates imposing either tensile (SrTiO3) or compressive (LaAlO3) strains. Room-temperature electric characterization of the FTJs shows polarization-controlled ON/ OFF states. Clear evidences of field-induced M/I transition (difference between junction resistance in OFF and ON state is increased of more than one order of magnitude) are observed in junctions prepared on SrTiO3 but the HD layer is generally metallic on LaAlO3. Moreover, the M/I transition is only confined in an interfacial layer of the slave film thus entailing an overall reduction of TER. The orderly results reported here give some hints towards selection of HD materials and substrates for optimal FTJ responsiveness.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.1612.00679</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Barium titanates ; Compressive properties ; Electrical junctions ; Ferroelectric materials ; Ferroelectricity ; Insulators ; Manganites ; Materials selection ; Phase diagrams ; Physics - Materials Science ; Strontium titanates ; Substrates ; Tunnel junctions</subject><ispartof>arXiv.org, 2016-12</ispartof><rights>2016. This work is published under http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (the “License”). 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Half-doped manganites being at the verge of metal-insulator character are thus good candidates to be slave layers in FTJs. However, the phase diagram of these oxides is extremely sensitive to strain and thus can be radically different when integrated in epitaxial FTJs. Here we report a systematic study of large-area (A = 4 to 100 um2) Pt/La0.5Sr0.5MnO3/BaTiO3/La0.7Sr0.3MnO3 (Pt/HD/BTO/LSMO) FTJs, having different thicknesses of the ferroelectric (2-3nm) and HD layers (1-2nm), grown on substrates imposing either tensile (SrTiO3) or compressive (LaAlO3) strains. Room-temperature electric characterization of the FTJs shows polarization-controlled ON/ OFF states. Clear evidences of field-induced M/I transition (difference between junction resistance in OFF and ON state is increased of more than one order of magnitude) are observed in junctions prepared on SrTiO3 but the HD layer is generally metallic on LaAlO3. Moreover, the M/I transition is only confined in an interfacial layer of the slave film thus entailing an overall reduction of TER. The orderly results reported here give some hints towards selection of HD materials and substrates for optimal FTJ responsiveness.</description><subject>Barium titanates</subject><subject>Compressive properties</subject><subject>Electrical junctions</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Insulators</subject><subject>Manganites</subject><subject>Materials selection</subject><subject>Phase diagrams</subject><subject>Physics - Materials Science</subject><subject>Strontium titanates</subject><subject>Substrates</subject><subject>Tunnel junctions</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GOX</sourceid><recordid>eNotkMtOwzAQRS0kJKrSD2CFJdYp9jh2nSVUvKSiLtp95CQ2uHLtYDsV_QG-m9CymVnM0dyrg9ANJfNSck7uVfy2hzkVFOaEiEV1gSbAGC1kCXCFZintCCEgFsA5m6CfTY7K-qINPsfgnO5w1KkPPtmD9jolHAxOTh00_lTOFF3oR2Sv_IfyNmu8UmTON3Ec737NsFNHHRO2PumYR9B6_Ki2drwYHWPQTrc52hbnwXvt8G7wbbZj2DW6NMolPfvfU7R9ftouX4vV-uVt-bAqFIeqkKyhsisb3jRM0BYEUAaGVsBEKwSDtpSGUtopUlbAQRheSm2YMI0UvJHApuj2_PYkqe6j3at4rP9k1SdZI3F3JvoYvgadcr0LQ_RjpxqIJCXn1Uj9AkyGbSE</recordid><startdate>20161202</startdate><enddate>20161202</enddate><creator>Radaelli, Greta</creator><creator>Gutiérrez, Diego</creator><creator>Qian, Mengdi</creator><creator>Fina, Ignasi</creator><creator>Sánchez, Florencio</creator><creator>Baldrati, Lorenzo</creator><creator>Heidler, Jakoba</creator><creator>Piamonteze, Cinthia</creator><creator>Bertacco, Riccardo</creator><creator>Fontcuberta, Josep</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20161202</creationdate><title>Strain-controlled responsiveness of slave half-doped manganite La0.5Sr0.5MnO3 layers inserted in BaTiO3 ferroelectric tunnel junctions</title><author>Radaelli, Greta ; Gutiérrez, Diego ; Qian, Mengdi ; Fina, Ignasi ; Sánchez, Florencio ; Baldrati, Lorenzo ; Heidler, Jakoba ; Piamonteze, Cinthia ; Bertacco, Riccardo ; Fontcuberta, Josep</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a529-83b18d4b5bb361c262132f19236c6632c48f111da0492526f548ef36fb865b823</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Barium titanates</topic><topic>Compressive properties</topic><topic>Electrical junctions</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>Insulators</topic><topic>Manganites</topic><topic>Materials selection</topic><topic>Phase diagrams</topic><topic>Physics - Materials Science</topic><topic>Strontium titanates</topic><topic>Substrates</topic><topic>Tunnel junctions</topic><toplevel>online_resources</toplevel><creatorcontrib>Radaelli, Greta</creatorcontrib><creatorcontrib>Gutiérrez, Diego</creatorcontrib><creatorcontrib>Qian, Mengdi</creatorcontrib><creatorcontrib>Fina, Ignasi</creatorcontrib><creatorcontrib>Sánchez, Florencio</creatorcontrib><creatorcontrib>Baldrati, Lorenzo</creatorcontrib><creatorcontrib>Heidler, Jakoba</creatorcontrib><creatorcontrib>Piamonteze, Cinthia</creatorcontrib><creatorcontrib>Bertacco, Riccardo</creatorcontrib><creatorcontrib>Fontcuberta, Josep</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Radaelli, Greta</au><au>Gutiérrez, Diego</au><au>Qian, Mengdi</au><au>Fina, Ignasi</au><au>Sánchez, Florencio</au><au>Baldrati, Lorenzo</au><au>Heidler, Jakoba</au><au>Piamonteze, Cinthia</au><au>Bertacco, Riccardo</au><au>Fontcuberta, Josep</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Strain-controlled responsiveness of slave half-doped manganite La0.5Sr0.5MnO3 layers inserted in BaTiO3 ferroelectric tunnel junctions</atitle><jtitle>arXiv.org</jtitle><date>2016-12-02</date><risdate>2016</risdate><eissn>2331-8422</eissn><abstract>Insertion of layers displaying field-induced metal-to-insulator (M/I) transition in ferroelectric tunnel junctions (FTJs) has received attention as a potentially useful way to enlarge junction tunnel electroresistance (TER). Half-doped manganites being at the verge of metal-insulator character are thus good candidates to be slave layers in FTJs. However, the phase diagram of these oxides is extremely sensitive to strain and thus can be radically different when integrated in epitaxial FTJs. Here we report a systematic study of large-area (A = 4 to 100 um2) Pt/La0.5Sr0.5MnO3/BaTiO3/La0.7Sr0.3MnO3 (Pt/HD/BTO/LSMO) FTJs, having different thicknesses of the ferroelectric (2-3nm) and HD layers (1-2nm), grown on substrates imposing either tensile (SrTiO3) or compressive (LaAlO3) strains. Room-temperature electric characterization of the FTJs shows polarization-controlled ON/ OFF states. Clear evidences of field-induced M/I transition (difference between junction resistance in OFF and ON state is increased of more than one order of magnitude) are observed in junctions prepared on SrTiO3 but the HD layer is generally metallic on LaAlO3. 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| subjects | Barium titanates Compressive properties Electrical junctions Ferroelectric materials Ferroelectricity Insulators Manganites Materials selection Phase diagrams Physics - Materials Science Strontium titanates Substrates Tunnel junctions |
| title | Strain-controlled responsiveness of slave half-doped manganite La0.5Sr0.5MnO3 layers inserted in BaTiO3 ferroelectric tunnel junctions |
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