Spin-orbit interaction in InAs/GaSb heterostructures quantified by weak antilocalization
We study the spin-orbit interaction (SOI) in InAs/ GaSb and InAs quantum wells. We show through temperature- and gate-dependent magnetotransport measurements of weak antilocalization that the dominant spin-orbit relaxation mechanism in our low-mobility heterostructures is Elliott-Yafet and not Dyako...
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creator | Herling, F Morrison, C Knox, C S Zhang, S Newell, O Myronov, M Linfield, E H Marrows, C H |
description | We study the spin-orbit interaction (SOI) in InAs/ GaSb and InAs quantum wells. We show through temperature- and gate-dependent magnetotransport measurements of weak antilocalization that the dominant spin-orbit relaxation mechanism in our low-mobility heterostructures is Elliott-Yafet and not Dyakonov-Perel in the form of the Rashba or Dresselhaus SOI as previously suggested. We compare our findings with recent work on this material system and show that the SOI length lies within the same range. The SOI length may be controlled using an electrostatic gate, opening up prospects for developing spintronic applications. |
doi_str_mv | 10.48550/arxiv.1610.09749 |
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fullrecord | <record><control><sourceid>proquest_arxiv</sourceid><recordid>TN_cdi_arxiv_primary_1610_09749</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2074963633</sourcerecordid><originalsourceid>FETCH-LOGICAL-a523-cdc8c7a684093fe96f874a62846d2cf68a92cf956290f3fbf8904f092bcc943f3</originalsourceid><addsrcrecordid>eNotj0FPAjEUhBsTEwnyAzzZxPNCt-122yMhiiQkHuDgbfO228biugttV8VfTwFP8zIzmbwPoYecTLksCjID_-u-p7lIBlElVzdoRBnLM8kpvUOTEHaEECpKWhRshN43e9dlva9dxK6LxoOOru_SjVfdPMyWsKnxh0lBH6IfdBy8CfgwQBeddabB9RH_GPjEZ6PtNbTuD84L9-jWQhvM5F_HaPvyvF28Zuu35WoxX2dQUJbpRktdgpCcKGaNElaWHASVXDRUWyFBJVGFoIpYZmsrFeGWKFprrTizbIwer7MX7Grv3Rf4Y3XGry74qfF0bex9fxhMiNWuH3yXfqooSQXBBGPsBIUcXp0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2074963633</pqid></control><display><type>article</type><title>Spin-orbit interaction in InAs/GaSb heterostructures quantified by weak antilocalization</title><source>arXiv.org</source><source>Free E- Journals</source><creator>Herling, F ; Morrison, C ; Knox, C S ; Zhang, S ; Newell, O ; Myronov, M ; Linfield, E H ; Marrows, C H</creator><creatorcontrib>Herling, F ; Morrison, C ; Knox, C S ; Zhang, S ; Newell, O ; Myronov, M ; Linfield, E H ; Marrows, C H</creatorcontrib><description>We study the spin-orbit interaction (SOI) in InAs/ GaSb and InAs quantum wells. We show through temperature- and gate-dependent magnetotransport measurements of weak antilocalization that the dominant spin-orbit relaxation mechanism in our low-mobility heterostructures is Elliott-Yafet and not Dyakonov-Perel in the form of the Rashba or Dresselhaus SOI as previously suggested. We compare our findings with recent work on this material system and show that the SOI length lies within the same range. The SOI length may be controlled using an electrostatic gate, opening up prospects for developing spintronic applications.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.1610.09749</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Heterostructures ; Physics - Mesoscale and Nanoscale Physics ; Quantum wells ; Spin-orbit interactions ; Temperature dependence</subject><ispartof>arXiv.org, 2017-03</ispartof><rights>2017. This work is published under http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,780,784,885,27925</link.rule.ids><backlink>$$Uhttps://doi.org/10.1103/PhysRevB.95.155307$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.48550/arXiv.1610.09749$$DView paper in arXiv$$Hfree_for_read</backlink></links><search><creatorcontrib>Herling, F</creatorcontrib><creatorcontrib>Morrison, C</creatorcontrib><creatorcontrib>Knox, C S</creatorcontrib><creatorcontrib>Zhang, S</creatorcontrib><creatorcontrib>Newell, O</creatorcontrib><creatorcontrib>Myronov, M</creatorcontrib><creatorcontrib>Linfield, E H</creatorcontrib><creatorcontrib>Marrows, C H</creatorcontrib><title>Spin-orbit interaction in InAs/GaSb heterostructures quantified by weak antilocalization</title><title>arXiv.org</title><description>We study the spin-orbit interaction (SOI) in InAs/ GaSb and InAs quantum wells. We show through temperature- and gate-dependent magnetotransport measurements of weak antilocalization that the dominant spin-orbit relaxation mechanism in our low-mobility heterostructures is Elliott-Yafet and not Dyakonov-Perel in the form of the Rashba or Dresselhaus SOI as previously suggested. We compare our findings with recent work on this material system and show that the SOI length lies within the same range. The SOI length may be controlled using an electrostatic gate, opening up prospects for developing spintronic applications.</description><subject>Heterostructures</subject><subject>Physics - Mesoscale and Nanoscale Physics</subject><subject>Quantum wells</subject><subject>Spin-orbit interactions</subject><subject>Temperature dependence</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GOX</sourceid><recordid>eNotj0FPAjEUhBsTEwnyAzzZxPNCt-122yMhiiQkHuDgbfO228biugttV8VfTwFP8zIzmbwPoYecTLksCjID_-u-p7lIBlElVzdoRBnLM8kpvUOTEHaEECpKWhRshN43e9dlva9dxK6LxoOOru_SjVfdPMyWsKnxh0lBH6IfdBy8CfgwQBeddabB9RH_GPjEZ6PtNbTuD84L9-jWQhvM5F_HaPvyvF28Zuu35WoxX2dQUJbpRktdgpCcKGaNElaWHASVXDRUWyFBJVGFoIpYZmsrFeGWKFprrTizbIwer7MX7Grv3Rf4Y3XGry74qfF0bex9fxhMiNWuH3yXfqooSQXBBGPsBIUcXp0</recordid><startdate>20170302</startdate><enddate>20170302</enddate><creator>Herling, F</creator><creator>Morrison, C</creator><creator>Knox, C S</creator><creator>Zhang, S</creator><creator>Newell, O</creator><creator>Myronov, M</creator><creator>Linfield, E H</creator><creator>Marrows, C H</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20170302</creationdate><title>Spin-orbit interaction in InAs/GaSb heterostructures quantified by weak antilocalization</title><author>Herling, F ; Morrison, C ; Knox, C S ; Zhang, S ; Newell, O ; Myronov, M ; Linfield, E H ; Marrows, C H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a523-cdc8c7a684093fe96f874a62846d2cf68a92cf956290f3fbf8904f092bcc943f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Heterostructures</topic><topic>Physics - Mesoscale and Nanoscale Physics</topic><topic>Quantum wells</topic><topic>Spin-orbit interactions</topic><topic>Temperature dependence</topic><toplevel>online_resources</toplevel><creatorcontrib>Herling, F</creatorcontrib><creatorcontrib>Morrison, C</creatorcontrib><creatorcontrib>Knox, C S</creatorcontrib><creatorcontrib>Zhang, S</creatorcontrib><creatorcontrib>Newell, O</creatorcontrib><creatorcontrib>Myronov, M</creatorcontrib><creatorcontrib>Linfield, E H</creatorcontrib><creatorcontrib>Marrows, C H</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central</collection><collection>SciTech Premium Collection (Proquest) (PQ_SDU_P3)</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content Database (Proquest) (PQ_SDU_P3)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Herling, F</au><au>Morrison, C</au><au>Knox, C S</au><au>Zhang, S</au><au>Newell, O</au><au>Myronov, M</au><au>Linfield, E H</au><au>Marrows, C H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Spin-orbit interaction in InAs/GaSb heterostructures quantified by weak antilocalization</atitle><jtitle>arXiv.org</jtitle><date>2017-03-02</date><risdate>2017</risdate><eissn>2331-8422</eissn><abstract>We study the spin-orbit interaction (SOI) in InAs/ GaSb and InAs quantum wells. We show through temperature- and gate-dependent magnetotransport measurements of weak antilocalization that the dominant spin-orbit relaxation mechanism in our low-mobility heterostructures is Elliott-Yafet and not Dyakonov-Perel in the form of the Rashba or Dresselhaus SOI as previously suggested. We compare our findings with recent work on this material system and show that the SOI length lies within the same range. The SOI length may be controlled using an electrostatic gate, opening up prospects for developing spintronic applications.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.1610.09749</doi><oa>free_for_read</oa></addata></record> |
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subjects | Heterostructures Physics - Mesoscale and Nanoscale Physics Quantum wells Spin-orbit interactions Temperature dependence |
title | Spin-orbit interaction in InAs/GaSb heterostructures quantified by weak antilocalization |
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