Anisotropic straining of graphene using micropatterned SiN membranes
We use micro-Raman spectroscopy to study strain profiles in graphene monolayers suspended over SiN membranes micropatterned with holes of non-circular geometry. We show that a uniform differential pressure load $\Delta P$ over elliptical regions of free-standing graphene yields measurable deviations...
Gespeichert in:
Hauptverfasser: | , , , , , , , , , |
---|---|
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | Settembrini, Fabiana Francesca Colangelo, Francesco Pitanti, Alessandro Miseikis, Vaidotas Coletti, Camilla Menichetti, Guido Colle, Renato Grosso, Giuseppe Tredicucci, Alessandro Roddaro, Stefano |
description | We use micro-Raman spectroscopy to study strain profiles in graphene
monolayers suspended over SiN membranes micropatterned with holes of
non-circular geometry. We show that a uniform differential pressure load
$\Delta P$ over elliptical regions of free-standing graphene yields measurable
deviations from hydrostatic strain conventionally observed in
radially-symmetric microbubbles. The top hydrostatic strain $\bar{\varepsilon}$
we observe is estimated to be $\approx0.7\%$ for $\Delta P = 1\,{\rm bar}$ in
graphene clamped to elliptical SiN holes with axis $40$ and $20\,{\rm \mu m}$.
In the same configuration, we report a $G_\pm$ splitting of $10\,{\rm cm^{-1}}$
which is in good agreement with the calculated anisotropy $\Delta\varepsilon
\approx 0.6\%$ for our device geometry. Our results are consistent with the
most recent reports on the Gr\"uneisen parameters. Perspectives for the
achievement of arbitrary strain configurations by designing suitable SiN holes
and boundary clamping conditions are discussed. |
doi_str_mv | 10.48550/arxiv.1606.06995 |
format | Article |
fullrecord | <record><control><sourceid>arxiv_GOX</sourceid><recordid>TN_cdi_arxiv_primary_1606_06995</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1606_06995</sourcerecordid><originalsourceid>FETCH-LOGICAL-a675-f0028c9980367a190aae3d1f78e9dbf328c0ae900f59410d429a538c8e08dc553</originalsourceid><addsrcrecordid>eNotj8tOwzAURL3pAhU-gBX-gYTrOnbsZdXykqp20e6jW_u6WCJOZAcEf09bWI00czTSYexeQN0YpeAR83f8qoUGXYO2Vt2w9TLFMkx5GKPjZcoYU0wnPgR-yji-UyL-WS5NH90ZwmminMjzfdzynvpjxkTlls0CfhS6-885Ozw_HVav1Wb38rZabirUraoCwMI4aw1I3aKwgEjSi9Aasv4Y5HkEJAsQlG0E-GZhUUnjDIHxTik5Zw9_t1eNbsyxx_zTXXS6q478BczuRa0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Anisotropic straining of graphene using micropatterned SiN membranes</title><source>arXiv.org</source><creator>Settembrini, Fabiana Francesca ; Colangelo, Francesco ; Pitanti, Alessandro ; Miseikis, Vaidotas ; Coletti, Camilla ; Menichetti, Guido ; Colle, Renato ; Grosso, Giuseppe ; Tredicucci, Alessandro ; Roddaro, Stefano</creator><creatorcontrib>Settembrini, Fabiana Francesca ; Colangelo, Francesco ; Pitanti, Alessandro ; Miseikis, Vaidotas ; Coletti, Camilla ; Menichetti, Guido ; Colle, Renato ; Grosso, Giuseppe ; Tredicucci, Alessandro ; Roddaro, Stefano</creatorcontrib><description>We use micro-Raman spectroscopy to study strain profiles in graphene
monolayers suspended over SiN membranes micropatterned with holes of
non-circular geometry. We show that a uniform differential pressure load
$\Delta P$ over elliptical regions of free-standing graphene yields measurable
deviations from hydrostatic strain conventionally observed in
radially-symmetric microbubbles. The top hydrostatic strain $\bar{\varepsilon}$
we observe is estimated to be $\approx0.7\%$ for $\Delta P = 1\,{\rm bar}$ in
graphene clamped to elliptical SiN holes with axis $40$ and $20\,{\rm \mu m}$.
In the same configuration, we report a $G_\pm$ splitting of $10\,{\rm cm^{-1}}$
which is in good agreement with the calculated anisotropy $\Delta\varepsilon
\approx 0.6\%$ for our device geometry. Our results are consistent with the
most recent reports on the Gr\"uneisen parameters. Perspectives for the
achievement of arbitrary strain configurations by designing suitable SiN holes
and boundary clamping conditions are discussed.</description><identifier>DOI: 10.48550/arxiv.1606.06995</identifier><language>eng</language><subject>Physics - Materials Science</subject><creationdate>2016-06</creationdate><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,782,887</link.rule.ids><linktorsrc>$$Uhttps://arxiv.org/abs/1606.06995$$EView_record_in_Cornell_University$$FView_record_in_$$GCornell_University$$Hfree_for_read</linktorsrc><backlink>$$Uhttps://doi.org/10.48550/arXiv.1606.06995$$DView paper in arXiv$$Hfree_for_read</backlink></links><search><creatorcontrib>Settembrini, Fabiana Francesca</creatorcontrib><creatorcontrib>Colangelo, Francesco</creatorcontrib><creatorcontrib>Pitanti, Alessandro</creatorcontrib><creatorcontrib>Miseikis, Vaidotas</creatorcontrib><creatorcontrib>Coletti, Camilla</creatorcontrib><creatorcontrib>Menichetti, Guido</creatorcontrib><creatorcontrib>Colle, Renato</creatorcontrib><creatorcontrib>Grosso, Giuseppe</creatorcontrib><creatorcontrib>Tredicucci, Alessandro</creatorcontrib><creatorcontrib>Roddaro, Stefano</creatorcontrib><title>Anisotropic straining of graphene using micropatterned SiN membranes</title><description>We use micro-Raman spectroscopy to study strain profiles in graphene
monolayers suspended over SiN membranes micropatterned with holes of
non-circular geometry. We show that a uniform differential pressure load
$\Delta P$ over elliptical regions of free-standing graphene yields measurable
deviations from hydrostatic strain conventionally observed in
radially-symmetric microbubbles. The top hydrostatic strain $\bar{\varepsilon}$
we observe is estimated to be $\approx0.7\%$ for $\Delta P = 1\,{\rm bar}$ in
graphene clamped to elliptical SiN holes with axis $40$ and $20\,{\rm \mu m}$.
In the same configuration, we report a $G_\pm$ splitting of $10\,{\rm cm^{-1}}$
which is in good agreement with the calculated anisotropy $\Delta\varepsilon
\approx 0.6\%$ for our device geometry. Our results are consistent with the
most recent reports on the Gr\"uneisen parameters. Perspectives for the
achievement of arbitrary strain configurations by designing suitable SiN holes
and boundary clamping conditions are discussed.</description><subject>Physics - Materials Science</subject><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>GOX</sourceid><recordid>eNotj8tOwzAURL3pAhU-gBX-gYTrOnbsZdXykqp20e6jW_u6WCJOZAcEf09bWI00czTSYexeQN0YpeAR83f8qoUGXYO2Vt2w9TLFMkx5GKPjZcoYU0wnPgR-yji-UyL-WS5NH90ZwmminMjzfdzynvpjxkTlls0CfhS6-885Ozw_HVav1Wb38rZabirUraoCwMI4aw1I3aKwgEjSi9Aasv4Y5HkEJAsQlG0E-GZhUUnjDIHxTik5Zw9_t1eNbsyxx_zTXXS6q478BczuRa0</recordid><startdate>20160622</startdate><enddate>20160622</enddate><creator>Settembrini, Fabiana Francesca</creator><creator>Colangelo, Francesco</creator><creator>Pitanti, Alessandro</creator><creator>Miseikis, Vaidotas</creator><creator>Coletti, Camilla</creator><creator>Menichetti, Guido</creator><creator>Colle, Renato</creator><creator>Grosso, Giuseppe</creator><creator>Tredicucci, Alessandro</creator><creator>Roddaro, Stefano</creator><scope>GOX</scope></search><sort><creationdate>20160622</creationdate><title>Anisotropic straining of graphene using micropatterned SiN membranes</title><author>Settembrini, Fabiana Francesca ; Colangelo, Francesco ; Pitanti, Alessandro ; Miseikis, Vaidotas ; Coletti, Camilla ; Menichetti, Guido ; Colle, Renato ; Grosso, Giuseppe ; Tredicucci, Alessandro ; Roddaro, Stefano</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a675-f0028c9980367a190aae3d1f78e9dbf328c0ae900f59410d429a538c8e08dc553</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Physics - Materials Science</topic><toplevel>online_resources</toplevel><creatorcontrib>Settembrini, Fabiana Francesca</creatorcontrib><creatorcontrib>Colangelo, Francesco</creatorcontrib><creatorcontrib>Pitanti, Alessandro</creatorcontrib><creatorcontrib>Miseikis, Vaidotas</creatorcontrib><creatorcontrib>Coletti, Camilla</creatorcontrib><creatorcontrib>Menichetti, Guido</creatorcontrib><creatorcontrib>Colle, Renato</creatorcontrib><creatorcontrib>Grosso, Giuseppe</creatorcontrib><creatorcontrib>Tredicucci, Alessandro</creatorcontrib><creatorcontrib>Roddaro, Stefano</creatorcontrib><collection>arXiv.org</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Settembrini, Fabiana Francesca</au><au>Colangelo, Francesco</au><au>Pitanti, Alessandro</au><au>Miseikis, Vaidotas</au><au>Coletti, Camilla</au><au>Menichetti, Guido</au><au>Colle, Renato</au><au>Grosso, Giuseppe</au><au>Tredicucci, Alessandro</au><au>Roddaro, Stefano</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Anisotropic straining of graphene using micropatterned SiN membranes</atitle><date>2016-06-22</date><risdate>2016</risdate><abstract>We use micro-Raman spectroscopy to study strain profiles in graphene
monolayers suspended over SiN membranes micropatterned with holes of
non-circular geometry. We show that a uniform differential pressure load
$\Delta P$ over elliptical regions of free-standing graphene yields measurable
deviations from hydrostatic strain conventionally observed in
radially-symmetric microbubbles. The top hydrostatic strain $\bar{\varepsilon}$
we observe is estimated to be $\approx0.7\%$ for $\Delta P = 1\,{\rm bar}$ in
graphene clamped to elliptical SiN holes with axis $40$ and $20\,{\rm \mu m}$.
In the same configuration, we report a $G_\pm$ splitting of $10\,{\rm cm^{-1}}$
which is in good agreement with the calculated anisotropy $\Delta\varepsilon
\approx 0.6\%$ for our device geometry. Our results are consistent with the
most recent reports on the Gr\"uneisen parameters. Perspectives for the
achievement of arbitrary strain configurations by designing suitable SiN holes
and boundary clamping conditions are discussed.</abstract><doi>10.48550/arxiv.1606.06995</doi><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | DOI: 10.48550/arxiv.1606.06995 |
ispartof | |
issn | |
language | eng |
recordid | cdi_arxiv_primary_1606_06995 |
source | arXiv.org |
subjects | Physics - Materials Science |
title | Anisotropic straining of graphene using micropatterned SiN membranes |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-04T12%3A50%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-arxiv_GOX&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Anisotropic%20straining%20of%20graphene%20using%20micropatterned%20SiN%20membranes&rft.au=Settembrini,%20Fabiana%20Francesca&rft.date=2016-06-22&rft_id=info:doi/10.48550/arxiv.1606.06995&rft_dat=%3Carxiv_GOX%3E1606_06995%3C/arxiv_GOX%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |