Crafting zero-bias one-way transport of charge and spin
We explore the electronic structure and transport properties of a metal on top of a (weakly coupled) two-dimensional topological insulator. Unlike the widely studied junctions between topological non-trivial materials, the systems studied here allow for a unique bandstructure and transport steering....
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| creator | Torres, L. E. F. Foa Lago, V. Dal Morell, E. Suárez |
| description | We explore the electronic structure and transport properties of a metal on top of a (weakly coupled) two-dimensional topological insulator. Unlike the widely studied junctions between topological non-trivial materials, the systems studied here allow for a unique bandstructure and transport steering. First, states on the topological insulator layer may coexist with the gapless bulk and, second, the edge states on one edge can be selectively switched-off, thereby leading to nearly perfect directional transport of charge and spin even in the zero bias limit. We illustrate these phenomena for Bernal stacked bilayer graphene with Haldane or intrinsic spin-orbit terms and a perpendicular bias voltage. This opens a path for realizing directed transport in materials such as van der Waals heterostructures, monolayer and ultrathin topological insulators. |
| doi_str_mv | 10.48550/arxiv.1602.05519 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_arxiv</sourceid><recordid>TN_cdi_arxiv_primary_1602_05519</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2078217625</sourcerecordid><originalsourceid>FETCH-LOGICAL-a525-954873028a34f3194ac3924e73a73f3199016844c28051556811f33736851a003</originalsourceid><addsrcrecordid>eNotj0tLw0AUhQdBsNT-AFcOuE68c-_czGQpxUeh4Kb7cI1JTdFMnEnV-uvtw9WBw8fhfEpdGcitZ4ZbiT_dV24KwByYTXmmJkhkMm8RL9QspQ0AYOGQmSbKzaO0Y9ev9W8TQ_bSSdKhb7Jv2ekxSp-GEEcdWl2_SVw3WvpXnYauv1TnrbynZvafU7V6uF_Nn7Ll8-NifrfMhJGzkq13BOiFbEumtFJTibZxJI4ORQmm8NbW6IENc-GNaYkcFZ6NANBUXZ9mj1bVELsPibvqYFcd7fbEzYkYYvjcNmmsNmEb-_2nCsF5NK5Apj8v1k5v</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2078217625</pqid></control><display><type>article</type><title>Crafting zero-bias one-way transport of charge and spin</title><source>arXiv.org</source><source>Free E- Journals</source><creator>Torres, L. E. F. Foa ; Lago, V. Dal ; Morell, E. Suárez</creator><creatorcontrib>Torres, L. E. F. Foa ; Lago, V. Dal ; Morell, E. Suárez</creatorcontrib><description>We explore the electronic structure and transport properties of a metal on top of a (weakly coupled) two-dimensional topological insulator. Unlike the widely studied junctions between topological non-trivial materials, the systems studied here allow for a unique bandstructure and transport steering. First, states on the topological insulator layer may coexist with the gapless bulk and, second, the edge states on one edge can be selectively switched-off, thereby leading to nearly perfect directional transport of charge and spin even in the zero bias limit. We illustrate these phenomena for Bernal stacked bilayer graphene with Haldane or intrinsic spin-orbit terms and a perpendicular bias voltage. This opens a path for realizing directed transport in materials such as van der Waals heterostructures, monolayer and ultrathin topological insulators.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.1602.05519</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Bias ; Bilayers ; Charge transport ; Electron spin ; Electronic structure ; Graphene ; Heterostructures ; Physics - Mesoscale and Nanoscale Physics ; Steering ; Topological insulators ; Topology ; Transport properties</subject><ispartof>arXiv.org, 2016-02</ispartof><rights>2016. This work is published under http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,780,784,885,27925</link.rule.ids><backlink>$$Uhttps://doi.org/10.1103/PhysRevB.93.075438$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.48550/arXiv.1602.05519$$DView paper in arXiv$$Hfree_for_read</backlink></links><search><creatorcontrib>Torres, L. E. F. Foa</creatorcontrib><creatorcontrib>Lago, V. Dal</creatorcontrib><creatorcontrib>Morell, E. Suárez</creatorcontrib><title>Crafting zero-bias one-way transport of charge and spin</title><title>arXiv.org</title><description>We explore the electronic structure and transport properties of a metal on top of a (weakly coupled) two-dimensional topological insulator. Unlike the widely studied junctions between topological non-trivial materials, the systems studied here allow for a unique bandstructure and transport steering. First, states on the topological insulator layer may coexist with the gapless bulk and, second, the edge states on one edge can be selectively switched-off, thereby leading to nearly perfect directional transport of charge and spin even in the zero bias limit. We illustrate these phenomena for Bernal stacked bilayer graphene with Haldane or intrinsic spin-orbit terms and a perpendicular bias voltage. This opens a path for realizing directed transport in materials such as van der Waals heterostructures, monolayer and ultrathin topological insulators.</description><subject>Bias</subject><subject>Bilayers</subject><subject>Charge transport</subject><subject>Electron spin</subject><subject>Electronic structure</subject><subject>Graphene</subject><subject>Heterostructures</subject><subject>Physics - Mesoscale and Nanoscale Physics</subject><subject>Steering</subject><subject>Topological insulators</subject><subject>Topology</subject><subject>Transport properties</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GOX</sourceid><recordid>eNotj0tLw0AUhQdBsNT-AFcOuE68c-_czGQpxUeh4Kb7cI1JTdFMnEnV-uvtw9WBw8fhfEpdGcitZ4ZbiT_dV24KwByYTXmmJkhkMm8RL9QspQ0AYOGQmSbKzaO0Y9ev9W8TQ_bSSdKhb7Jv2ekxSp-GEEcdWl2_SVw3WvpXnYauv1TnrbynZvafU7V6uF_Nn7Ll8-NifrfMhJGzkq13BOiFbEumtFJTibZxJI4ORQmm8NbW6IENc-GNaYkcFZ6NANBUXZ9mj1bVELsPibvqYFcd7fbEzYkYYvjcNmmsNmEb-_2nCsF5NK5Apj8v1k5v</recordid><startdate>20160217</startdate><enddate>20160217</enddate><creator>Torres, L. E. F. Foa</creator><creator>Lago, V. Dal</creator><creator>Morell, E. Suárez</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20160217</creationdate><title>Crafting zero-bias one-way transport of charge and spin</title><author>Torres, L. E. F. Foa ; Lago, V. Dal ; Morell, E. Suárez</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a525-954873028a34f3194ac3924e73a73f3199016844c28051556811f33736851a003</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Bias</topic><topic>Bilayers</topic><topic>Charge transport</topic><topic>Electron spin</topic><topic>Electronic structure</topic><topic>Graphene</topic><topic>Heterostructures</topic><topic>Physics - Mesoscale and Nanoscale Physics</topic><topic>Steering</topic><topic>Topological insulators</topic><topic>Topology</topic><topic>Transport properties</topic><toplevel>online_resources</toplevel><creatorcontrib>Torres, L. E. F. Foa</creatorcontrib><creatorcontrib>Lago, V. Dal</creatorcontrib><creatorcontrib>Morell, E. Suárez</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Torres, L. E. F. Foa</au><au>Lago, V. Dal</au><au>Morell, E. Suárez</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Crafting zero-bias one-way transport of charge and spin</atitle><jtitle>arXiv.org</jtitle><date>2016-02-17</date><risdate>2016</risdate><eissn>2331-8422</eissn><abstract>We explore the electronic structure and transport properties of a metal on top of a (weakly coupled) two-dimensional topological insulator. Unlike the widely studied junctions between topological non-trivial materials, the systems studied here allow for a unique bandstructure and transport steering. First, states on the topological insulator layer may coexist with the gapless bulk and, second, the edge states on one edge can be selectively switched-off, thereby leading to nearly perfect directional transport of charge and spin even in the zero bias limit. We illustrate these phenomena for Bernal stacked bilayer graphene with Haldane or intrinsic spin-orbit terms and a perpendicular bias voltage. This opens a path for realizing directed transport in materials such as van der Waals heterostructures, monolayer and ultrathin topological insulators.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.1602.05519</doi><oa>free_for_read</oa></addata></record> |
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| subjects | Bias Bilayers Charge transport Electron spin Electronic structure Graphene Heterostructures Physics - Mesoscale and Nanoscale Physics Steering Topological insulators Topology Transport properties |
| title | Crafting zero-bias one-way transport of charge and spin |
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