Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy
We show the operation of a Cu/Al_2O_3/Cu/n-Si hot-electron transistor for the straightforward determination of a metal/semiconductor energy barrier height even at temperatures below carrier-freeze out in the semiconductor. The hot-electron spectroscopy measurements return a fairly temperature indepe...
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| creator | Parui, Subir Atxabal, Ainhoa Ribeiro, Mário Bedoya-Pinto, Amilcar Sun, Xiangnan Llopis, Roger Casanova, Fèlix Hueso, Luis E |
| description | We show the operation of a Cu/Al_2O_3/Cu/n-Si hot-electron transistor for the straightforward determination of a metal/semiconductor energy barrier height even at temperatures below carrier-freeze out in the semiconductor. The hot-electron spectroscopy measurements return a fairly temperature independent value for the Cu/n-Si barrier of 0.66 \(\pm\) 0.04 eV at temperatures below 180 K, in substantial accordance with mainstream methods based on complex fittings of either current-voltage (I-V) and capacitance-voltage (C-V) measurements. The Cu/n-Si hot-electron transistors exhibit an OFF current of ~2 * 10^-13 A, an ON/OFF ratio of ~10^5 and an equivalent subtreshold swing of ~96 mV/dec at low temperatures, which are suitable values for potential high frequency devices. |
| doi_str_mv | 10.48550/arxiv.1510.06854 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_arxiv</sourceid><recordid>TN_cdi_arxiv_primary_1510_06854</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2075135760</sourcerecordid><originalsourceid>FETCH-LOGICAL-a520-f499196df1b39a844de9554f59255c1b1f67d82c896c204e607a9ec98efb71323</originalsourceid><addsrcrecordid>eNotkMtqwzAQRUWh0JDmA7qqoGsnettaltAXBApN9kaWx7FSx3YlOdR_Xyfpai7D4XI5CD1QshSZlGRl_K87LamcHkRlUtygGeOcJplg7A4tQjgQQphKmZR8hg5f0DhTNIBLiOCPrjXRdS3uKhxrwOth1SZbh7e27mL8HnFhvHfgcQ1uX0dcjHgIrt1j1yYlnJwFPIEJNGCjn2pCfwnBdv14j24r0wRY_N852r2-7Nbvyebz7WP9vEmMZCSphNZUq7KiBdcmE6IELaWopJ4GW1rQSqVlxmymlWVEgCKp0WB1BlWRUs74HD1eay8i8t67o_FjfhaSX4RMxNOV6H33M0CI-aEbfDttyhlJJeUyVYT_AZSSY_c</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2075135760</pqid></control><display><type>article</type><title>Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy</title><source>arXiv.org</source><source>Free E- Journals</source><creator>Parui, Subir ; Atxabal, Ainhoa ; Ribeiro, Mário ; Bedoya-Pinto, Amilcar ; Sun, Xiangnan ; Llopis, Roger ; Casanova, Fèlix ; Hueso, Luis E</creator><creatorcontrib>Parui, Subir ; Atxabal, Ainhoa ; Ribeiro, Mário ; Bedoya-Pinto, Amilcar ; Sun, Xiangnan ; Llopis, Roger ; Casanova, Fèlix ; Hueso, Luis E</creatorcontrib><description>We show the operation of a Cu/Al_2O_3/Cu/n-Si hot-electron transistor for the straightforward determination of a metal/semiconductor energy barrier height even at temperatures below carrier-freeze out in the semiconductor. The hot-electron spectroscopy measurements return a fairly temperature independent value for the Cu/n-Si barrier of 0.66 \(\pm\) 0.04 eV at temperatures below 180 K, in substantial accordance with mainstream methods based on complex fittings of either current-voltage (I-V) and capacitance-voltage (C-V) measurements. The Cu/n-Si hot-electron transistors exhibit an OFF current of ~2 * 10^-13 A, an ON/OFF ratio of ~10^5 and an equivalent subtreshold swing of ~96 mV/dec at low temperatures, which are suitable values for potential high frequency devices.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.1510.06854</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Aluminum ; Copper ; Electric potential ; Electron spectroscopy ; Physics - Mesoscale and Nanoscale Physics ; Semiconductor devices ; Silicon ; Spectrum analysis ; Transistors</subject><ispartof>arXiv.org, 2015-10</ispartof><rights>2015. This work is published under http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,781,785,886,27930</link.rule.ids><backlink>$$Uhttps://doi.org/10.48550/arXiv.1510.06854$$DView paper in arXiv$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.1063/1.4934885$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink></links><search><creatorcontrib>Parui, Subir</creatorcontrib><creatorcontrib>Atxabal, Ainhoa</creatorcontrib><creatorcontrib>Ribeiro, Mário</creatorcontrib><creatorcontrib>Bedoya-Pinto, Amilcar</creatorcontrib><creatorcontrib>Sun, Xiangnan</creatorcontrib><creatorcontrib>Llopis, Roger</creatorcontrib><creatorcontrib>Casanova, Fèlix</creatorcontrib><creatorcontrib>Hueso, Luis E</creatorcontrib><title>Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy</title><title>arXiv.org</title><description>We show the operation of a Cu/Al_2O_3/Cu/n-Si hot-electron transistor for the straightforward determination of a metal/semiconductor energy barrier height even at temperatures below carrier-freeze out in the semiconductor. The hot-electron spectroscopy measurements return a fairly temperature independent value for the Cu/n-Si barrier of 0.66 \(\pm\) 0.04 eV at temperatures below 180 K, in substantial accordance with mainstream methods based on complex fittings of either current-voltage (I-V) and capacitance-voltage (C-V) measurements. The Cu/n-Si hot-electron transistors exhibit an OFF current of ~2 * 10^-13 A, an ON/OFF ratio of ~10^5 and an equivalent subtreshold swing of ~96 mV/dec at low temperatures, which are suitable values for potential high frequency devices.</description><subject>Aluminum</subject><subject>Copper</subject><subject>Electric potential</subject><subject>Electron spectroscopy</subject><subject>Physics - Mesoscale and Nanoscale Physics</subject><subject>Semiconductor devices</subject><subject>Silicon</subject><subject>Spectrum analysis</subject><subject>Transistors</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GOX</sourceid><recordid>eNotkMtqwzAQRUWh0JDmA7qqoGsnettaltAXBApN9kaWx7FSx3YlOdR_Xyfpai7D4XI5CD1QshSZlGRl_K87LamcHkRlUtygGeOcJplg7A4tQjgQQphKmZR8hg5f0DhTNIBLiOCPrjXRdS3uKhxrwOth1SZbh7e27mL8HnFhvHfgcQ1uX0dcjHgIrt1j1yYlnJwFPIEJNGCjn2pCfwnBdv14j24r0wRY_N852r2-7Nbvyebz7WP9vEmMZCSphNZUq7KiBdcmE6IELaWopJ4GW1rQSqVlxmymlWVEgCKp0WB1BlWRUs74HD1eay8i8t67o_FjfhaSX4RMxNOV6H33M0CI-aEbfDttyhlJJeUyVYT_AZSSY_c</recordid><startdate>20151023</startdate><enddate>20151023</enddate><creator>Parui, Subir</creator><creator>Atxabal, Ainhoa</creator><creator>Ribeiro, Mário</creator><creator>Bedoya-Pinto, Amilcar</creator><creator>Sun, Xiangnan</creator><creator>Llopis, Roger</creator><creator>Casanova, Fèlix</creator><creator>Hueso, Luis E</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20151023</creationdate><title>Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy</title><author>Parui, Subir ; Atxabal, Ainhoa ; Ribeiro, Mário ; Bedoya-Pinto, Amilcar ; Sun, Xiangnan ; Llopis, Roger ; Casanova, Fèlix ; Hueso, Luis E</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a520-f499196df1b39a844de9554f59255c1b1f67d82c896c204e607a9ec98efb71323</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Aluminum</topic><topic>Copper</topic><topic>Electric potential</topic><topic>Electron spectroscopy</topic><topic>Physics - Mesoscale and Nanoscale Physics</topic><topic>Semiconductor devices</topic><topic>Silicon</topic><topic>Spectrum analysis</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Parui, Subir</creatorcontrib><creatorcontrib>Atxabal, Ainhoa</creatorcontrib><creatorcontrib>Ribeiro, Mário</creatorcontrib><creatorcontrib>Bedoya-Pinto, Amilcar</creatorcontrib><creatorcontrib>Sun, Xiangnan</creatorcontrib><creatorcontrib>Llopis, Roger</creatorcontrib><creatorcontrib>Casanova, Fèlix</creatorcontrib><creatorcontrib>Hueso, Luis E</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Access via ProQuest (Open Access)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Parui, Subir</au><au>Atxabal, Ainhoa</au><au>Ribeiro, Mário</au><au>Bedoya-Pinto, Amilcar</au><au>Sun, Xiangnan</au><au>Llopis, Roger</au><au>Casanova, Fèlix</au><au>Hueso, Luis E</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy</atitle><jtitle>arXiv.org</jtitle><date>2015-10-23</date><risdate>2015</risdate><eissn>2331-8422</eissn><abstract>We show the operation of a Cu/Al_2O_3/Cu/n-Si hot-electron transistor for the straightforward determination of a metal/semiconductor energy barrier height even at temperatures below carrier-freeze out in the semiconductor. The hot-electron spectroscopy measurements return a fairly temperature independent value for the Cu/n-Si barrier of 0.66 \(\pm\) 0.04 eV at temperatures below 180 K, in substantial accordance with mainstream methods based on complex fittings of either current-voltage (I-V) and capacitance-voltage (C-V) measurements. The Cu/n-Si hot-electron transistors exhibit an OFF current of ~2 * 10^-13 A, an ON/OFF ratio of ~10^5 and an equivalent subtreshold swing of ~96 mV/dec at low temperatures, which are suitable values for potential high frequency devices.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.1510.06854</doi><oa>free_for_read</oa></addata></record> |
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| subjects | Aluminum Copper Electric potential Electron spectroscopy Physics - Mesoscale and Nanoscale Physics Semiconductor devices Silicon Spectrum analysis Transistors |
| title | Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy |
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