Circular photon drag effect in bulk tellurium

The circular photon drag effect is observed in a bulk semiconductor. The photocurrent caused by a transfer of both translational and angular momenta of light to charge carriers is detected in tellurium in the mid-infrared frequency range. Dependencies of the photocurrent on the light polarization an...

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Veröffentlicht in:arXiv.org 2015-10
Hauptverfasser: Shalygin, V A, Moldavskaya, M D, Danilov, S N, Farbshtein, I I, Golub, L E
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description The circular photon drag effect is observed in a bulk semiconductor. The photocurrent caused by a transfer of both translational and angular momenta of light to charge carriers is detected in tellurium in the mid-infrared frequency range. Dependencies of the photocurrent on the light polarization and on the incidence angle agree with the symmetry analysis of the circular photon drag effect. Microscopic models of the effect are developed for both intra- and inter-subband optical absorption in the valence band of tellurium. The shift contribution to the circular photon drag current is calculated. An observed decrease of the circular photon drag current with increase of the photon energy is explained by the theory for inter-subband optical transitions. Theoretical estimates of the circular photon drag current agree with the experimental data.
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subjects Circularity
Current carriers
Drag
Frequency ranges
Incidence angle
Photoelectric effect
Photoelectric emission
Physics - Mesoscale and Nanoscale Physics
Tellurium
Valence band
title Circular photon drag effect in bulk tellurium
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