Biased doped silicene as a source for advanced electronics
Restructuring of electronic spectrum in a buckled silicene monolayer under some applied voltage between its two sublattices and in presence of certain impurity atoms is considered. A special attention is given to formation of localized impurity levels within the band gap and the to their collectiviz...
Gespeichert in:
| Veröffentlicht in: | arXiv.org 2015-09 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | arXiv.org |
| container_volume | |
| creator | Pogorelov, Yuriy G Loktev, Vadim M |
| description | Restructuring of electronic spectrum in a buckled silicene monolayer under some applied voltage between its two sublattices and in presence of certain impurity atoms is considered. A special attention is given to formation of localized impurity levels within the band gap and the to their collectivization at finite impurity concentration. It is shown that a qualitative restructuring of quasiparticle spectrum within the initial band gap and then specific metal-insulator phase transitions are possible for such disordered system and can be effectively controlled by variation of the electric field bias at given impurity perturbation potential and concentration. Since these effects are expected at low impurity concentrations but at not too low temperatures, they can be promising for practical applications in nanoelectronics devices. |
| doi_str_mv | 10.48550/arxiv.1509.03702 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_arxiv</sourceid><recordid>TN_cdi_arxiv_primary_1509_03702</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2078027244</sourcerecordid><originalsourceid>FETCH-LOGICAL-a524-18152edc78d23dacee077472fb805960912b36c60316a87c885cd638f6d589243</originalsourceid><addsrcrecordid>eNotj0tLAzEUhYMgWGp_gCsDrqfe3LzuuNPiCwpuuh_SJAMp48yYtEX_vWPr5pzNx-F8jN0IWCrSGu5d_k7HpdBQL0FawAs2QylFRQrxii1K2QEAGotayxl7eEquxMDDME5ZUpd87CN3hTtehkP2kbdD5i4cXe8nInbR7_PQJ1-u2WXruhIX_z1nm5fnzeqtWn-8vq8e15XTqCpBQmMM3lJAGZyPEaxVFtstga4N1AK30ngDUhhH1hNpH4yk1gRNNSo5Z7fn2ZNYM-b06fJP8yfYnAQn4u5MjHn4OsSyb3bT83761CBYArSolPwF9LZROA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2078027244</pqid></control><display><type>article</type><title>Biased doped silicene as a source for advanced electronics</title><source>arXiv.org</source><source>Free E- Journals</source><creator>Pogorelov, Yuriy G ; Loktev, Vadim M</creator><creatorcontrib>Pogorelov, Yuriy G ; Loktev, Vadim M</creatorcontrib><description>Restructuring of electronic spectrum in a buckled silicene monolayer under some applied voltage between its two sublattices and in presence of certain impurity atoms is considered. A special attention is given to formation of localized impurity levels within the band gap and the to their collectivization at finite impurity concentration. It is shown that a qualitative restructuring of quasiparticle spectrum within the initial band gap and then specific metal-insulator phase transitions are possible for such disordered system and can be effectively controlled by variation of the electric field bias at given impurity perturbation potential and concentration. Since these effects are expected at low impurity concentrations but at not too low temperatures, they can be promising for practical applications in nanoelectronics devices.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.1509.03702</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Band gap ; Electric fields ; Energy gap ; Impurities ; Insulators ; Nanoelectronics ; Nanotechnology devices ; Perturbation ; Phase transitions ; Physics - Disordered Systems and Neural Networks ; Physics - Mesoscale and Nanoscale Physics ; Silicene</subject><ispartof>arXiv.org, 2015-09</ispartof><rights>2015. This work is published under http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,777,781,882,27906</link.rule.ids><backlink>$$Uhttps://doi.org/10.1103/PhysRevB.93.045117$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.48550/arXiv.1509.03702$$DView paper in arXiv$$Hfree_for_read</backlink></links><search><creatorcontrib>Pogorelov, Yuriy G</creatorcontrib><creatorcontrib>Loktev, Vadim M</creatorcontrib><title>Biased doped silicene as a source for advanced electronics</title><title>arXiv.org</title><description>Restructuring of electronic spectrum in a buckled silicene monolayer under some applied voltage between its two sublattices and in presence of certain impurity atoms is considered. A special attention is given to formation of localized impurity levels within the band gap and the to their collectivization at finite impurity concentration. It is shown that a qualitative restructuring of quasiparticle spectrum within the initial band gap and then specific metal-insulator phase transitions are possible for such disordered system and can be effectively controlled by variation of the electric field bias at given impurity perturbation potential and concentration. Since these effects are expected at low impurity concentrations but at not too low temperatures, they can be promising for practical applications in nanoelectronics devices.</description><subject>Band gap</subject><subject>Electric fields</subject><subject>Energy gap</subject><subject>Impurities</subject><subject>Insulators</subject><subject>Nanoelectronics</subject><subject>Nanotechnology devices</subject><subject>Perturbation</subject><subject>Phase transitions</subject><subject>Physics - Disordered Systems and Neural Networks</subject><subject>Physics - Mesoscale and Nanoscale Physics</subject><subject>Silicene</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GOX</sourceid><recordid>eNotj0tLAzEUhYMgWGp_gCsDrqfe3LzuuNPiCwpuuh_SJAMp48yYtEX_vWPr5pzNx-F8jN0IWCrSGu5d_k7HpdBQL0FawAs2QylFRQrxii1K2QEAGotayxl7eEquxMDDME5ZUpd87CN3hTtehkP2kbdD5i4cXe8nInbR7_PQJ1-u2WXruhIX_z1nm5fnzeqtWn-8vq8e15XTqCpBQmMM3lJAGZyPEaxVFtstga4N1AK30ngDUhhH1hNpH4yk1gRNNSo5Z7fn2ZNYM-b06fJP8yfYnAQn4u5MjHn4OsSyb3bT83761CBYArSolPwF9LZROA</recordid><startdate>20150912</startdate><enddate>20150912</enddate><creator>Pogorelov, Yuriy G</creator><creator>Loktev, Vadim M</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20150912</creationdate><title>Biased doped silicene as a source for advanced electronics</title><author>Pogorelov, Yuriy G ; Loktev, Vadim M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a524-18152edc78d23dacee077472fb805960912b36c60316a87c885cd638f6d589243</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Band gap</topic><topic>Electric fields</topic><topic>Energy gap</topic><topic>Impurities</topic><topic>Insulators</topic><topic>Nanoelectronics</topic><topic>Nanotechnology devices</topic><topic>Perturbation</topic><topic>Phase transitions</topic><topic>Physics - Disordered Systems and Neural Networks</topic><topic>Physics - Mesoscale and Nanoscale Physics</topic><topic>Silicene</topic><toplevel>online_resources</toplevel><creatorcontrib>Pogorelov, Yuriy G</creatorcontrib><creatorcontrib>Loktev, Vadim M</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pogorelov, Yuriy G</au><au>Loktev, Vadim M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Biased doped silicene as a source for advanced electronics</atitle><jtitle>arXiv.org</jtitle><date>2015-09-12</date><risdate>2015</risdate><eissn>2331-8422</eissn><abstract>Restructuring of electronic spectrum in a buckled silicene monolayer under some applied voltage between its two sublattices and in presence of certain impurity atoms is considered. A special attention is given to formation of localized impurity levels within the band gap and the to their collectivization at finite impurity concentration. It is shown that a qualitative restructuring of quasiparticle spectrum within the initial band gap and then specific metal-insulator phase transitions are possible for such disordered system and can be effectively controlled by variation of the electric field bias at given impurity perturbation potential and concentration. Since these effects are expected at low impurity concentrations but at not too low temperatures, they can be promising for practical applications in nanoelectronics devices.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.1509.03702</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | EISSN: 2331-8422 |
| ispartof | arXiv.org, 2015-09 |
| issn | 2331-8422 |
| language | eng |
| recordid | cdi_arxiv_primary_1509_03702 |
| source | arXiv.org; Free E- Journals |
| subjects | Band gap Electric fields Energy gap Impurities Insulators Nanoelectronics Nanotechnology devices Perturbation Phase transitions Physics - Disordered Systems and Neural Networks Physics - Mesoscale and Nanoscale Physics Silicene |
| title | Biased doped silicene as a source for advanced electronics |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T01%3A19%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_arxiv&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Biased%20doped%20silicene%20as%20a%20source%20for%20advanced%20electronics&rft.jtitle=arXiv.org&rft.au=Pogorelov,%20Yuriy%20G&rft.date=2015-09-12&rft.eissn=2331-8422&rft_id=info:doi/10.48550/arxiv.1509.03702&rft_dat=%3Cproquest_arxiv%3E2078027244%3C/proquest_arxiv%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2078027244&rft_id=info:pmid/&rfr_iscdi=true |