In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory

Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips. Bit-error-rate (BER) is proposed as a holistic parameter for...

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Veröffentlicht in:	arXiv.org 2015-08
Hauptverfasser:	Ji, B L, H Li, Q Ye, Gausepohl, S, Deora, S, Veksler, D, Vivekanand, S, Chong, H, Stamper, H, Burroughs, T, Johnson, C, Smalley, M, Bennett, S, Kaushik, V, Piccirillo, J, Rodgers, M, Passaro, M, Liehr, M
Format:	Artikel
Sprache:	eng
Schlagworte:	Computer Science - Emerging Technologies Design margins Error correction Mathematical analysis Physics - Data Analysis, Statistics and Probability Physics - Materials Science Product design Random access memory Self tests Statistical tests Technology assessment
Online-Zugang:	Volltext
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