Pressure induced electronic topological transition in Sb2S3

Pressure induced electronic topological transitions in the wide band gap semiconductor Sb2S3 (Eg = 1.7-1.8 eV) with similar crystal symmetry (SG: Pnma) to its illustrious analog, Sb2Se3, has been studied using Raman spectroscopy, resistivity and the available literature on the x-ray diffraction stud...

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Veröffentlicht in:	arXiv.org 2015-08
Hauptverfasser:	Sorb, Y A, Rajaji, V, Malavi, P S, Subbarao, U, Hadappa, P, Karmakar, S, Peter, Sebastian C, Narayana, C
Format:	Artikel
Sprache:	eng
Schlagworte:	Electrical resistivity Fermi surfaces Phonons Physics - Materials Science Pressure dependence Raman spectroscopy Topology Transport properties X-ray diffraction
Online-Zugang:	Volltext
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