High field response of gated graphene at THz frequencies

We study the Fermi energy level dependence of nonlinear terahertz (THz) transmission of gated multi-layer and single-layer graphene transferred onto sapphire and quartz substrates. The two samples represent two limits of low-field impurity scattering: short-range neutral and long-range charged impur...

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Veröffentlicht in:	arXiv.org 2015-08
Hauptverfasser:	Razavipour, Hadi, Hafez, Hassan A, Al-Naib, Ibraheem, Yang, Wayne, Lévesque, Pierre, Guermoune, Abdeladim, Blanchard, Francois, Chai, Xin, Ferachou, Denis, Martel, Richard, Hilke, Michael, Dignam, Marc M, Ozaki, Tsuneyuki, Cooke, David G
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplitudes Bleaching Dependence Energy levels Energy transmission Graphene Impurities Intraband absorption Monolayers Multilayers Physics - Materials Science Physics - Mesoscale and Nanoscale Physics Sapphire Scattering Substrates Terahertz frequencies
Online-Zugang:	Volltext
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