Characteristics of Non-Irradiated and Irradiated Double SOI Integration Type Sensor

We are developing monolithic pixel sensors based on a 0.2 \(\mu\)m fully-depleted Silicon-on-Insulator (SOI) technology for HEP experiment applications. The total ionizing dose (TID) effect is the major issue in the applications for hard radiation environments in HEP experiments. To compensate for T...

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Veröffentlicht in:	arXiv.org 2015-07
Hauptverfasser:	Asano, Mari, Hara, Kazuhiko, Sekigawa, Daisuke, Honda, Shunsuke, Tobita, Naoshi, Arai, Yasuo, Miyoshi, Toshinobu, Kurachi, Ikuo
Format:	Artikel
Sprache:	eng
Schlagworte:	Ionizing radiation Physics - Instrumentation and Detectors Radiation damage Sensors Silicon SOI (semiconductors) Structural damage
Online-Zugang:	Volltext
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