Optically addressable silicon vacancy-related spin centers in rhombic silicon carbide with high breakdown characteristics and ENDOR evidence of their structure

We discovered uniaxial oriented centers in silicon carbide having unusual performance. Here we demonstrate that the family of silicon-vacancy related centers with \(S= 3/2\) in rhombic 15R-SiC crystalline matrix possess unique characteristics such as ODMR contrast and optical spin alignment existing...

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Veröffentlicht in:	arXiv.org 2015-06
Hauptverfasser:	Soltamov, V A, Yavkin, B V, Tolmachev, D O, Babunts, R A, Badalyan, A G, V Yu Davydov, Mokhov, E N, Proskuryakov, I I, Orlinskii, S B, Baranov, P G
Format:	Artikel
Sprache:	eng
Schlagworte:	Covalent bonds Lattice vacancies Physics - Materials Science Polytypes Silicon Silicon carbide Vacancies
Online-Zugang:	Volltext
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