Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene

Integration of graphene with Si microelectronics is very appealing by offering potentially a broad range of new functionalities. New materials to be integrated with Si platform must conform to stringent purity standards. Here, we investigate graphene layers grown on copper foils by chemical vapor de...

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Veröffentlicht in:	arXiv.org 2015-05
Hauptverfasser:	Lupina, Grzegorz, Kitzmann, Julia, Costina, Ioan, Lukosius, Mindaugas, Wenger, Christian, Wolff, Andre, Vaziri, Sam, Ostling, Mikael, Pasternak, Iwona, Krajewska, Aleksandra, Strupinski, Wlodek, Kataria, Satender, Gahoi, Amit, Lemme, Max C, Ruhl, Guenther, Guenther Zoth, Luxenhofer, Oliver, Mehr, Wolfgang
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition Cleaning Contamination Copper Current carriers Depth profiling Diffusion length Electrochemical analysis Graphene Heat treatment Impurities Ions Metal foils Microelectronics Nanotubes Optoelectronics Organic chemistry Physics - Mesoscale and Nanoscale Physics Secondary ion mass spectrometry Silicon substrates X ray reflection X-ray fluorescence
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