A Revisit to High Thermoelectric Performance of Single-layer MoS2
Both electron and phonon transport properties of single layer MoS2 (SLMoS2) are studied. Based on first-principles calculations, the electrical conductivity of SLMoS2 is calculated by Boltzmann equations. The thermal conductivity of SLMoS2 is calculated to be as high as 116.8 Wm-1K-1 by molecular dy...
Gespeichert in:
Veröffentlicht in: | arXiv.org 2015-04 |
---|---|
Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | arXiv.org |
container_volume | |
creator | Zelin Jin Liao, Quanwen Fang, Haisheng Liu, Zhichun Liu, Wei Ding, Zhidong Luo, Tengfei Yang, Nuo |
description | Both electron and phonon transport properties of single layer MoS2 (SLMoS2) are studied. Based on first-principles calculations, the electrical conductivity of SLMoS2 is calculated by Boltzmann equations. The thermal conductivity of SLMoS2 is calculated to be as high as 116.8 Wm-1K-1 by molecular dynamics (MD) simulations. The predicted value of ZT is as high as 0.26 at 500K. As the thermal conductivity could be reduced largely by phonon engineering, there should be a high possibility to enhance ZT in the SLMoS2-based materials. |
doi_str_mv | 10.48550/arxiv.1504.03852 |
format | Article |
fullrecord | <record><control><sourceid>proquest_arxiv</sourceid><recordid>TN_cdi_arxiv_primary_1504_03852</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2084232419</sourcerecordid><originalsourceid>FETCH-LOGICAL-a529-4fbf5bb0f2beadace65c44cb4580922078309fd000480d44b5af5182cb5d1c7e3</originalsourceid><addsrcrecordid>eNotj8FOAjEURRsTEwnyAa5s4nqw89oHnSUhKiQYjbCftJ1XKBkodgYif-8Iru7m5OYcxh5yMVQaUTyb9BNOwxyFGgqpEW5YD6TMM60A7tigabZCCBiNAVH22GTCv-gUmtDyNvJZWG_4akNpF6km16bg-CclH9PO7B3x6Pky7Nc1ZbU5U-LvcQn37NabuqHB__bZ6vVlNZ1li4-3-XSyyAxCkSlvPVorPFgylXE0QqeUswq1KADEWEtR-KpTU1pUSlk0HnMNzmKVuzHJPnu83l76ykMKO5PO5V9neensiKcrcUjx-0hNW27jMe07pxJEVy9B5YX8BdeqVI0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2084232419</pqid></control><display><type>article</type><title>A Revisit to High Thermoelectric Performance of Single-layer MoS2</title><source>arXiv.org</source><source>Free E- Journals</source><creator>Zelin Jin ; Liao, Quanwen ; Fang, Haisheng ; Liu, Zhichun ; Liu, Wei ; Ding, Zhidong ; Luo, Tengfei ; Yang, Nuo</creator><creatorcontrib>Zelin Jin ; Liao, Quanwen ; Fang, Haisheng ; Liu, Zhichun ; Liu, Wei ; Ding, Zhidong ; Luo, Tengfei ; Yang, Nuo</creatorcontrib><description>Both electron and phonon transport properties of single layer MoS2 (SLMoS2) are studied. Based on first-principles calculations, the electrical conductivity of SLMoS2 is calculated by Boltzmann equations. The thermal conductivity of SLMoS2 is calculated to be as high as 116.8 Wm-1K-1 by molecular dynamics (MD) simulations. The predicted value of ZT is as high as 0.26 at 500K. As the thermal conductivity could be reduced largely by phonon engineering, there should be a high possibility to enhance ZT in the SLMoS2-based materials.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.1504.03852</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Electrical resistivity ; First principles ; Heat conductivity ; Heat transfer ; Mathematical analysis ; Molecular dynamics ; Molybdenum disulfide ; Phonons ; Physics - Materials Science ; Physics - Mesoscale and Nanoscale Physics ; Thermal conductivity ; Transport properties</subject><ispartof>arXiv.org, 2015-04</ispartof><rights>2015. This work is published under http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,776,780,881,27902</link.rule.ids><backlink>$$Uhttps://doi.org/10.1038/srep18342$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.48550/arXiv.1504.03852$$DView paper in arXiv$$Hfree_for_read</backlink></links><search><creatorcontrib>Zelin Jin</creatorcontrib><creatorcontrib>Liao, Quanwen</creatorcontrib><creatorcontrib>Fang, Haisheng</creatorcontrib><creatorcontrib>Liu, Zhichun</creatorcontrib><creatorcontrib>Liu, Wei</creatorcontrib><creatorcontrib>Ding, Zhidong</creatorcontrib><creatorcontrib>Luo, Tengfei</creatorcontrib><creatorcontrib>Yang, Nuo</creatorcontrib><title>A Revisit to High Thermoelectric Performance of Single-layer MoS2</title><title>arXiv.org</title><description>Both electron and phonon transport properties of single layer MoS2 (SLMoS2) are studied. Based on first-principles calculations, the electrical conductivity of SLMoS2 is calculated by Boltzmann equations. The thermal conductivity of SLMoS2 is calculated to be as high as 116.8 Wm-1K-1 by molecular dynamics (MD) simulations. The predicted value of ZT is as high as 0.26 at 500K. As the thermal conductivity could be reduced largely by phonon engineering, there should be a high possibility to enhance ZT in the SLMoS2-based materials.</description><subject>Electrical resistivity</subject><subject>First principles</subject><subject>Heat conductivity</subject><subject>Heat transfer</subject><subject>Mathematical analysis</subject><subject>Molecular dynamics</subject><subject>Molybdenum disulfide</subject><subject>Phonons</subject><subject>Physics - Materials Science</subject><subject>Physics - Mesoscale and Nanoscale Physics</subject><subject>Thermal conductivity</subject><subject>Transport properties</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><sourceid>GOX</sourceid><recordid>eNotj8FOAjEURRsTEwnyAa5s4nqw89oHnSUhKiQYjbCftJ1XKBkodgYif-8Iru7m5OYcxh5yMVQaUTyb9BNOwxyFGgqpEW5YD6TMM60A7tigabZCCBiNAVH22GTCv-gUmtDyNvJZWG_4akNpF6km16bg-CclH9PO7B3x6Pky7Nc1ZbU5U-LvcQn37NabuqHB__bZ6vVlNZ1li4-3-XSyyAxCkSlvPVorPFgylXE0QqeUswq1KADEWEtR-KpTU1pUSlk0HnMNzmKVuzHJPnu83l76ykMKO5PO5V9neensiKcrcUjx-0hNW27jMe07pxJEVy9B5YX8BdeqVI0</recordid><startdate>20150415</startdate><enddate>20150415</enddate><creator>Zelin Jin</creator><creator>Liao, Quanwen</creator><creator>Fang, Haisheng</creator><creator>Liu, Zhichun</creator><creator>Liu, Wei</creator><creator>Ding, Zhidong</creator><creator>Luo, Tengfei</creator><creator>Yang, Nuo</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20150415</creationdate><title>A Revisit to High Thermoelectric Performance of Single-layer MoS2</title><author>Zelin Jin ; Liao, Quanwen ; Fang, Haisheng ; Liu, Zhichun ; Liu, Wei ; Ding, Zhidong ; Luo, Tengfei ; Yang, Nuo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a529-4fbf5bb0f2beadace65c44cb4580922078309fd000480d44b5af5182cb5d1c7e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Electrical resistivity</topic><topic>First principles</topic><topic>Heat conductivity</topic><topic>Heat transfer</topic><topic>Mathematical analysis</topic><topic>Molecular dynamics</topic><topic>Molybdenum disulfide</topic><topic>Phonons</topic><topic>Physics - Materials Science</topic><topic>Physics - Mesoscale and Nanoscale Physics</topic><topic>Thermal conductivity</topic><topic>Transport properties</topic><toplevel>online_resources</toplevel><creatorcontrib>Zelin Jin</creatorcontrib><creatorcontrib>Liao, Quanwen</creatorcontrib><creatorcontrib>Fang, Haisheng</creatorcontrib><creatorcontrib>Liu, Zhichun</creatorcontrib><creatorcontrib>Liu, Wei</creatorcontrib><creatorcontrib>Ding, Zhidong</creatorcontrib><creatorcontrib>Luo, Tengfei</creatorcontrib><creatorcontrib>Yang, Nuo</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zelin Jin</au><au>Liao, Quanwen</au><au>Fang, Haisheng</au><au>Liu, Zhichun</au><au>Liu, Wei</au><au>Ding, Zhidong</au><au>Luo, Tengfei</au><au>Yang, Nuo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Revisit to High Thermoelectric Performance of Single-layer MoS2</atitle><jtitle>arXiv.org</jtitle><date>2015-04-15</date><risdate>2015</risdate><eissn>2331-8422</eissn><abstract>Both electron and phonon transport properties of single layer MoS2 (SLMoS2) are studied. Based on first-principles calculations, the electrical conductivity of SLMoS2 is calculated by Boltzmann equations. The thermal conductivity of SLMoS2 is calculated to be as high as 116.8 Wm-1K-1 by molecular dynamics (MD) simulations. The predicted value of ZT is as high as 0.26 at 500K. As the thermal conductivity could be reduced largely by phonon engineering, there should be a high possibility to enhance ZT in the SLMoS2-based materials.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.1504.03852</doi><oa>free_for_read</oa></addata></record> |
fulltext | fulltext |
identifier | EISSN: 2331-8422 |
ispartof | arXiv.org, 2015-04 |
issn | 2331-8422 |
language | eng |
recordid | cdi_arxiv_primary_1504_03852 |
source | arXiv.org; Free E- Journals |
subjects | Electrical resistivity First principles Heat conductivity Heat transfer Mathematical analysis Molecular dynamics Molybdenum disulfide Phonons Physics - Materials Science Physics - Mesoscale and Nanoscale Physics Thermal conductivity Transport properties |
title | A Revisit to High Thermoelectric Performance of Single-layer MoS2 |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-11T10%3A22%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_arxiv&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20Revisit%20to%20High%20Thermoelectric%20Performance%20of%20Single-layer%20MoS2&rft.jtitle=arXiv.org&rft.au=Zelin%20Jin&rft.date=2015-04-15&rft.eissn=2331-8422&rft_id=info:doi/10.48550/arxiv.1504.03852&rft_dat=%3Cproquest_arxiv%3E2084232419%3C/proquest_arxiv%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2084232419&rft_id=info:pmid/&rfr_iscdi=true |