Design and realization of a facility for the characterization of Silicon Avalanche PhotoDiodes

We present the design, construction, and performance of a facility for the characterization of Silicon Avalanche Photodiodes in the operating temperature range between -2 \(^\circ\)C and 25 \(^\circ\)C. The system can simultaneously measure up to 24 photo-detectors, in a completely automatic way, within one day of operations. The measured data for each sensor are: the internal gain as a function of the bias voltage and temperature, the gain variation with respect to the bias voltage, and the dark current as a function of the gain. The systematic uncertainties have been evaluated during the commissioning of the system to be of the order of 1%. This paper describes in detail the facility design and layout, and the procedure employed to characterize the sensors. The results obtained from the measurement of the 380 Avalanche Photodiodes of the CLAS12-Forward Tagger calorimeter detector are then reported, as the first example of the massive usage of the facility.