Engineering the hole confinement for CdTe-based quantum dot molecules
We demonstrate an efficient method to engineer the quantum confinement in a system of two quantum dots grown in a vertical stack. We achieve this by using materials with a different lattice constant for the growth of the outer and inner barriers. We monitor the resulting dot morphology with transmis...
Gespeichert in:
| Hauptverfasser: | , , , , , , |
|---|---|
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Kłopotowski, Ł Wojnar, P Kret, S Parlińska-Wojtan, M Fronc, K Karczewski, G Wojtowicz, T |
| description | We demonstrate an efficient method to engineer the quantum confinement in a
system of two quantum dots grown in a vertical stack. We achieve this by using
materials with a different lattice constant for the growth of the outer and
inner barriers. We monitor the resulting dot morphology with transmission
electron microscopy studies and correlate the results with ensemble quantum dot
photoluminescence. Furthermore, we embed the double quantum dots into diode
structures and study photoluminescence as a function of bias voltage. We show
that in properly engineered structures, it is possible to achieve a resonance
of the hole states by tuning the energy levels with electric field. At the
resonance, we observe signatures of a formation of a molecular state,
hybridized over the two dots. |
| doi_str_mv | 10.48550/arxiv.1502.03592 |
| format | Article |
| fullrecord | <record><control><sourceid>arxiv_GOX</sourceid><recordid>TN_cdi_arxiv_primary_1502_03592</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1502_03592</sourcerecordid><originalsourceid>FETCH-LOGICAL-a672-4fd4783df6abb827d3a682c07cd67f5edbc6ec3ffb318a4898e7ec408fba08953</originalsourceid><addsrcrecordid>eNotz8tKxDAYBeBsXMiMD-DKvEBrmnuXQ6kXGHDTffmT_JkptKmmrejbO46uDhwOBz5C7itWSqsUe4T8NXyWlWK8ZELV_Ja0bToNCTEP6UTXM9LzPCL1c4qXdsK00jhn2oQOCwcLBvqxQVq3iYZ5pdNl67cRlz25iTAuePefO9I9tV3zUhzfnl-bw7EAbXghY5DGihA1OGe5CQK05Z4ZH7SJCoPzGr2I0YnKgrS1RYNeMhsdMFsrsSMPf7dXR_-ehwnyd__r6a8e8QP74Uan</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Engineering the hole confinement for CdTe-based quantum dot molecules</title><source>arXiv.org</source><creator>Kłopotowski, Ł ; Wojnar, P ; Kret, S ; Parlińska-Wojtan, M ; Fronc, K ; Karczewski, G ; Wojtowicz, T</creator><creatorcontrib>Kłopotowski, Ł ; Wojnar, P ; Kret, S ; Parlińska-Wojtan, M ; Fronc, K ; Karczewski, G ; Wojtowicz, T</creatorcontrib><description>We demonstrate an efficient method to engineer the quantum confinement in a
system of two quantum dots grown in a vertical stack. We achieve this by using
materials with a different lattice constant for the growth of the outer and
inner barriers. We monitor the resulting dot morphology with transmission
electron microscopy studies and correlate the results with ensemble quantum dot
photoluminescence. Furthermore, we embed the double quantum dots into diode
structures and study photoluminescence as a function of bias voltage. We show
that in properly engineered structures, it is possible to achieve a resonance
of the hole states by tuning the energy levels with electric field. At the
resonance, we observe signatures of a formation of a molecular state,
hybridized over the two dots.</description><identifier>DOI: 10.48550/arxiv.1502.03592</identifier><language>eng</language><subject>Physics - Mesoscale and Nanoscale Physics</subject><creationdate>2015-02</creationdate><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,780,885</link.rule.ids><linktorsrc>$$Uhttps://arxiv.org/abs/1502.03592$$EView_record_in_Cornell_University$$FView_record_in_$$GCornell_University$$Hfree_for_read</linktorsrc><backlink>$$Uhttps://doi.org/10.48550/arXiv.1502.03592$$DView paper in arXiv$$Hfree_for_read</backlink></links><search><creatorcontrib>Kłopotowski, Ł</creatorcontrib><creatorcontrib>Wojnar, P</creatorcontrib><creatorcontrib>Kret, S</creatorcontrib><creatorcontrib>Parlińska-Wojtan, M</creatorcontrib><creatorcontrib>Fronc, K</creatorcontrib><creatorcontrib>Karczewski, G</creatorcontrib><creatorcontrib>Wojtowicz, T</creatorcontrib><title>Engineering the hole confinement for CdTe-based quantum dot molecules</title><description>We demonstrate an efficient method to engineer the quantum confinement in a
system of two quantum dots grown in a vertical stack. We achieve this by using
materials with a different lattice constant for the growth of the outer and
inner barriers. We monitor the resulting dot morphology with transmission
electron microscopy studies and correlate the results with ensemble quantum dot
photoluminescence. Furthermore, we embed the double quantum dots into diode
structures and study photoluminescence as a function of bias voltage. We show
that in properly engineered structures, it is possible to achieve a resonance
of the hole states by tuning the energy levels with electric field. At the
resonance, we observe signatures of a formation of a molecular state,
hybridized over the two dots.</description><subject>Physics - Mesoscale and Nanoscale Physics</subject><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>GOX</sourceid><recordid>eNotz8tKxDAYBeBsXMiMD-DKvEBrmnuXQ6kXGHDTffmT_JkptKmmrejbO46uDhwOBz5C7itWSqsUe4T8NXyWlWK8ZELV_Ja0bToNCTEP6UTXM9LzPCL1c4qXdsK00jhn2oQOCwcLBvqxQVq3iYZ5pdNl67cRlz25iTAuePefO9I9tV3zUhzfnl-bw7EAbXghY5DGihA1OGe5CQK05Z4ZH7SJCoPzGr2I0YnKgrS1RYNeMhsdMFsrsSMPf7dXR_-ehwnyd__r6a8e8QP74Uan</recordid><startdate>20150212</startdate><enddate>20150212</enddate><creator>Kłopotowski, Ł</creator><creator>Wojnar, P</creator><creator>Kret, S</creator><creator>Parlińska-Wojtan, M</creator><creator>Fronc, K</creator><creator>Karczewski, G</creator><creator>Wojtowicz, T</creator><scope>GOX</scope></search><sort><creationdate>20150212</creationdate><title>Engineering the hole confinement for CdTe-based quantum dot molecules</title><author>Kłopotowski, Ł ; Wojnar, P ; Kret, S ; Parlińska-Wojtan, M ; Fronc, K ; Karczewski, G ; Wojtowicz, T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a672-4fd4783df6abb827d3a682c07cd67f5edbc6ec3ffb318a4898e7ec408fba08953</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Physics - Mesoscale and Nanoscale Physics</topic><toplevel>online_resources</toplevel><creatorcontrib>Kłopotowski, Ł</creatorcontrib><creatorcontrib>Wojnar, P</creatorcontrib><creatorcontrib>Kret, S</creatorcontrib><creatorcontrib>Parlińska-Wojtan, M</creatorcontrib><creatorcontrib>Fronc, K</creatorcontrib><creatorcontrib>Karczewski, G</creatorcontrib><creatorcontrib>Wojtowicz, T</creatorcontrib><collection>arXiv.org</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kłopotowski, Ł</au><au>Wojnar, P</au><au>Kret, S</au><au>Parlińska-Wojtan, M</au><au>Fronc, K</au><au>Karczewski, G</au><au>Wojtowicz, T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Engineering the hole confinement for CdTe-based quantum dot molecules</atitle><date>2015-02-12</date><risdate>2015</risdate><abstract>We demonstrate an efficient method to engineer the quantum confinement in a
system of two quantum dots grown in a vertical stack. We achieve this by using
materials with a different lattice constant for the growth of the outer and
inner barriers. We monitor the resulting dot morphology with transmission
electron microscopy studies and correlate the results with ensemble quantum dot
photoluminescence. Furthermore, we embed the double quantum dots into diode
structures and study photoluminescence as a function of bias voltage. We show
that in properly engineered structures, it is possible to achieve a resonance
of the hole states by tuning the energy levels with electric field. At the
resonance, we observe signatures of a formation of a molecular state,
hybridized over the two dots.</abstract><doi>10.48550/arxiv.1502.03592</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | DOI: 10.48550/arxiv.1502.03592 |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_arxiv_primary_1502_03592 |
| source | arXiv.org |
| subjects | Physics - Mesoscale and Nanoscale Physics |
| title | Engineering the hole confinement for CdTe-based quantum dot molecules |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T02%3A30%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-arxiv_GOX&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Engineering%20the%20hole%20confinement%20for%20CdTe-based%20quantum%20dot%20molecules&rft.au=K%C5%82opotowski,%20%C5%81&rft.date=2015-02-12&rft_id=info:doi/10.48550/arxiv.1502.03592&rft_dat=%3Carxiv_GOX%3E1502_03592%3C/arxiv_GOX%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |