Graphene Manipulation on 4H-SiC(0001) Using Scanning Tunneling Microscopy
Atomic-scale topography of epitaxial multilayer graphene grown on 4H-SiC(0001) was investigated using scanning tunneling microscopy (STM). Bunched nano-ridges ten times smaller than previously recorded were observed throughout the surface, the morphology of which was systematically altered using a r...
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| creator | P Xu Ackerman, M L Barber, S D Schoelz, J K D Qi Thibado, P M Wheeler, V D Nyakiti, L O Myers-Ward, R L Eddy, C R Jr Gaskill, D K |
| description | Atomic-scale topography of epitaxial multilayer graphene grown on 4H-SiC(0001) was investigated using scanning tunneling microscopy (STM). Bunched nano-ridges ten times smaller than previously recorded were observed throughout the surface, the morphology of which was systematically altered using a relatively new technique called electrostatic-manipulation scanning tunneling microscopy. Transformed graphene formations sometimes spontaneously returned to their original morphology, while others permanently changed. Using an electrostatic model, we calculate that a force up to ~5 nN was exerted by the STM tip, and an energy of around 10 eV was required to alter the geometry of a ~100 X 200 nm^2 area. |
| doi_str_mv | 10.48550/arxiv.1501.06903 |
| format | Article |
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Bunched nano-ridges ten times smaller than previously recorded were observed throughout the surface, the morphology of which was systematically altered using a relatively new technique called electrostatic-manipulation scanning tunneling microscopy. Transformed graphene formations sometimes spontaneously returned to their original morphology, while others permanently changed. 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Bunched nano-ridges ten times smaller than previously recorded were observed throughout the surface, the morphology of which was systematically altered using a relatively new technique called electrostatic-manipulation scanning tunneling microscopy. Transformed graphene formations sometimes spontaneously returned to their original morphology, while others permanently changed. Using an electrostatic model, we calculate that a force up to ~5 nN was exerted by the STM tip, and an energy of around 10 eV was required to alter the geometry of a ~100 X 200 nm^2 area.</description><subject>Epitaxial growth</subject><subject>Graphene</subject><subject>Mathematical morphology</subject><subject>Microscopy</subject><subject>Morphology</subject><subject>Multilayers</subject><subject>Physics - Mesoscale and Nanoscale Physics</subject><subject>Scanning tunneling microscopy</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GOX</sourceid><recordid>eNotj1FLwzAUhYMgOOZ-gE8WfNGH1nuTJk0fpeg22PBh9blkSaoZNa3pKu7fr9uEA_c8fFzOR8gdQpJKzuFZhT_3myAHTEDkwK7IhDKGsUwpvSGzvt8BABUZ5ZxNyHIeVPdlvY3WyrtuaNTetT4aky7ijSseRxifoo_e-c9oo5X3p1IO3tvm1NZOh7bXbXe4Jde1ano7-79TUr69lsUiXr3Pl8XLKlacQpyDsorzPM25VRnWaOgWMTdGgECZZplmwLcadU251FSIWgNnRgptDNZKsym5v7w9e1ZdcN8qHKqTb3X2HYmHC9GF9mew_b7atUPw46aKgmRApcyAHQEJtFZr</recordid><startdate>20150127</startdate><enddate>20150127</enddate><creator>P Xu</creator><creator>Ackerman, M L</creator><creator>Barber, S D</creator><creator>Schoelz, J K</creator><creator>D Qi</creator><creator>Thibado, P M</creator><creator>Wheeler, V D</creator><creator>Nyakiti, L O</creator><creator>Myers-Ward, R L</creator><creator>Eddy, C R</creator><creator>Jr</creator><creator>Gaskill, D K</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20150127</creationdate><title>Graphene Manipulation on 4H-SiC(0001) Using Scanning Tunneling Microscopy</title><author>P Xu ; 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| subjects | Epitaxial growth Graphene Mathematical morphology Microscopy Morphology Multilayers Physics - Mesoscale and Nanoscale Physics Scanning tunneling microscopy |
| title | Graphene Manipulation on 4H-SiC(0001) Using Scanning Tunneling Microscopy |
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