A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2
Two-dimensional layered materials, such as transition metal dichalcogenides (TMDCs), are promising materials for future electronics owing to their unique electronic properties. With the presence of a band gap, atomically thin gate defined quantum dots (QDs) can be achieved on TMDCs. Here, standard s...
Gespeichert in:
| Veröffentlicht in: | arXiv.org 2015-10 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | arXiv.org |
| container_volume | |
| creator | Xiang-Xiang, Song Liu, Di Mosallanejad, Vahid You, Jie Tian-Yi, Han Dian-Teng, Chen Hai-Ou, Li Cao, Gang Xiao, Ming Guo, Guang-Can Guo-Ping, Guo |
| description | Two-dimensional layered materials, such as transition metal dichalcogenides (TMDCs), are promising materials for future electronics owing to their unique electronic properties. With the presence of a band gap, atomically thin gate defined quantum dots (QDs) can be achieved on TMDCs. Here, standard semiconductor fabrication techniques are used to demonstrate quantum confined structures on WSe2 with tunnel barriers defined by electric fields, thereby eliminating the edge states induced by etching steps, which commonly appear in gapless graphene QDs. Over 40 consecutive Coulomb diamonds with a charging energy of approximately 2 meV were observed, showing the formation of a QD, which is consistent with the simulations. The size of the QD could be tuned over a factor of 2 by changing the voltages applied to the top gates. These results shed light on quantum nano-devices on TMDCs for further researches. |
| doi_str_mv | 10.48550/arxiv.1501.04377 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_arxiv</sourceid><recordid>TN_cdi_arxiv_primary_1501_04377</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2083414154</sourcerecordid><originalsourceid>FETCH-LOGICAL-a524-46ac418be49f3a655337107c11bc2d8c58cf825ac3d418502183ebf5839e51103</originalsourceid><addsrcrecordid>eNotkE1rAjEQhkOhULH-gJ4a6HltPt14FOkXCD1U6HHJJrMacRNNsv34943a08y8PAwzD0J3lEyFkpI86vjjvqZUEjolgtf1FRoxzmmlBGM3aJLSjhDCZjWTko-QXeCNzoAtdM6DxcdB-zz02IaMg8d5Czh_h8q6Hnxywes9zlGXNpcB95BLYJ3Z6r0JG_DOAk7QOxO8HUwOEX9-ALtF153eJ5j81zFaPz-tl6_V6v3lbblYVVoyUYmZNoKqFsS843pWzuM1JbWhtDXMKiOV6RST2nBbMEkYVRzaTio-B0kp4WN0f1l7VtAcout1_G1OKpqzikI8XIhDDMcBUm52YYjlqdQworiggkrB_wDhnWFt</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2083414154</pqid></control><display><type>article</type><title>A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2</title><source>arXiv.org</source><source>Free E- Journals</source><creator>Xiang-Xiang, Song ; Liu, Di ; Mosallanejad, Vahid ; You, Jie ; Tian-Yi, Han ; Dian-Teng, Chen ; Hai-Ou, Li ; Cao, Gang ; Xiao, Ming ; Guo, Guang-Can ; Guo-Ping, Guo</creator><creatorcontrib>Xiang-Xiang, Song ; Liu, Di ; Mosallanejad, Vahid ; You, Jie ; Tian-Yi, Han ; Dian-Teng, Chen ; Hai-Ou, Li ; Cao, Gang ; Xiao, Ming ; Guo, Guang-Can ; Guo-Ping, Guo</creatorcontrib><description>Two-dimensional layered materials, such as transition metal dichalcogenides (TMDCs), are promising materials for future electronics owing to their unique electronic properties. With the presence of a band gap, atomically thin gate defined quantum dots (QDs) can be achieved on TMDCs. Here, standard semiconductor fabrication techniques are used to demonstrate quantum confined structures on WSe2 with tunnel barriers defined by electric fields, thereby eliminating the edge states induced by etching steps, which commonly appear in gapless graphene QDs. Over 40 consecutive Coulomb diamonds with a charging energy of approximately 2 meV were observed, showing the formation of a QD, which is consistent with the simulations. The size of the QD could be tuned over a factor of 2 by changing the voltages applied to the top gates. These results shed light on quantum nano-devices on TMDCs for further researches.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.1501.04377</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Chalcogenides ; Diamonds ; Electric fields ; Graphene ; Layered materials ; Nanotechnology devices ; Physics - Mesoscale and Nanoscale Physics ; Quantum dots ; Transition metal compounds</subject><ispartof>arXiv.org, 2015-10</ispartof><rights>2015. This work is published under http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,776,780,881,27902</link.rule.ids><backlink>$$Uhttps://doi.org/10.48550/arXiv.1501.04377$$DView paper in arXiv$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.1039/c5nr04961j$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink></links><search><creatorcontrib>Xiang-Xiang, Song</creatorcontrib><creatorcontrib>Liu, Di</creatorcontrib><creatorcontrib>Mosallanejad, Vahid</creatorcontrib><creatorcontrib>You, Jie</creatorcontrib><creatorcontrib>Tian-Yi, Han</creatorcontrib><creatorcontrib>Dian-Teng, Chen</creatorcontrib><creatorcontrib>Hai-Ou, Li</creatorcontrib><creatorcontrib>Cao, Gang</creatorcontrib><creatorcontrib>Xiao, Ming</creatorcontrib><creatorcontrib>Guo, Guang-Can</creatorcontrib><creatorcontrib>Guo-Ping, Guo</creatorcontrib><title>A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2</title><title>arXiv.org</title><description>Two-dimensional layered materials, such as transition metal dichalcogenides (TMDCs), are promising materials for future electronics owing to their unique electronic properties. With the presence of a band gap, atomically thin gate defined quantum dots (QDs) can be achieved on TMDCs. Here, standard semiconductor fabrication techniques are used to demonstrate quantum confined structures on WSe2 with tunnel barriers defined by electric fields, thereby eliminating the edge states induced by etching steps, which commonly appear in gapless graphene QDs. Over 40 consecutive Coulomb diamonds with a charging energy of approximately 2 meV were observed, showing the formation of a QD, which is consistent with the simulations. The size of the QD could be tuned over a factor of 2 by changing the voltages applied to the top gates. These results shed light on quantum nano-devices on TMDCs for further researches.</description><subject>Chalcogenides</subject><subject>Diamonds</subject><subject>Electric fields</subject><subject>Graphene</subject><subject>Layered materials</subject><subject>Nanotechnology devices</subject><subject>Physics - Mesoscale and Nanoscale Physics</subject><subject>Quantum dots</subject><subject>Transition metal compounds</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><sourceid>GOX</sourceid><recordid>eNotkE1rAjEQhkOhULH-gJ4a6HltPt14FOkXCD1U6HHJJrMacRNNsv34943a08y8PAwzD0J3lEyFkpI86vjjvqZUEjolgtf1FRoxzmmlBGM3aJLSjhDCZjWTko-QXeCNzoAtdM6DxcdB-zz02IaMg8d5Czh_h8q6Hnxywes9zlGXNpcB95BLYJ3Z6r0JG_DOAk7QOxO8HUwOEX9-ALtF153eJ5j81zFaPz-tl6_V6v3lbblYVVoyUYmZNoKqFsS843pWzuM1JbWhtDXMKiOV6RST2nBbMEkYVRzaTio-B0kp4WN0f1l7VtAcout1_G1OKpqzikI8XIhDDMcBUm52YYjlqdQworiggkrB_wDhnWFt</recordid><startdate>20151013</startdate><enddate>20151013</enddate><creator>Xiang-Xiang, Song</creator><creator>Liu, Di</creator><creator>Mosallanejad, Vahid</creator><creator>You, Jie</creator><creator>Tian-Yi, Han</creator><creator>Dian-Teng, Chen</creator><creator>Hai-Ou, Li</creator><creator>Cao, Gang</creator><creator>Xiao, Ming</creator><creator>Guo, Guang-Can</creator><creator>Guo-Ping, Guo</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20151013</creationdate><title>A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2</title><author>Xiang-Xiang, Song ; Liu, Di ; Mosallanejad, Vahid ; You, Jie ; Tian-Yi, Han ; Dian-Teng, Chen ; Hai-Ou, Li ; Cao, Gang ; Xiao, Ming ; Guo, Guang-Can ; Guo-Ping, Guo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a524-46ac418be49f3a655337107c11bc2d8c58cf825ac3d418502183ebf5839e51103</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Chalcogenides</topic><topic>Diamonds</topic><topic>Electric fields</topic><topic>Graphene</topic><topic>Layered materials</topic><topic>Nanotechnology devices</topic><topic>Physics - Mesoscale and Nanoscale Physics</topic><topic>Quantum dots</topic><topic>Transition metal compounds</topic><toplevel>online_resources</toplevel><creatorcontrib>Xiang-Xiang, Song</creatorcontrib><creatorcontrib>Liu, Di</creatorcontrib><creatorcontrib>Mosallanejad, Vahid</creatorcontrib><creatorcontrib>You, Jie</creatorcontrib><creatorcontrib>Tian-Yi, Han</creatorcontrib><creatorcontrib>Dian-Teng, Chen</creatorcontrib><creatorcontrib>Hai-Ou, Li</creatorcontrib><creatorcontrib>Cao, Gang</creatorcontrib><creatorcontrib>Xiao, Ming</creatorcontrib><creatorcontrib>Guo, Guang-Can</creatorcontrib><creatorcontrib>Guo-Ping, Guo</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Xiang-Xiang, Song</au><au>Liu, Di</au><au>Mosallanejad, Vahid</au><au>You, Jie</au><au>Tian-Yi, Han</au><au>Dian-Teng, Chen</au><au>Hai-Ou, Li</au><au>Cao, Gang</au><au>Xiao, Ming</au><au>Guo, Guang-Can</au><au>Guo-Ping, Guo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2</atitle><jtitle>arXiv.org</jtitle><date>2015-10-13</date><risdate>2015</risdate><eissn>2331-8422</eissn><abstract>Two-dimensional layered materials, such as transition metal dichalcogenides (TMDCs), are promising materials for future electronics owing to their unique electronic properties. With the presence of a band gap, atomically thin gate defined quantum dots (QDs) can be achieved on TMDCs. Here, standard semiconductor fabrication techniques are used to demonstrate quantum confined structures on WSe2 with tunnel barriers defined by electric fields, thereby eliminating the edge states induced by etching steps, which commonly appear in gapless graphene QDs. Over 40 consecutive Coulomb diamonds with a charging energy of approximately 2 meV were observed, showing the formation of a QD, which is consistent with the simulations. The size of the QD could be tuned over a factor of 2 by changing the voltages applied to the top gates. These results shed light on quantum nano-devices on TMDCs for further researches.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.1501.04377</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | EISSN: 2331-8422 |
| ispartof | arXiv.org, 2015-10 |
| issn | 2331-8422 |
| language | eng |
| recordid | cdi_arxiv_primary_1501_04377 |
| source | arXiv.org; Free E- Journals |
| subjects | Chalcogenides Diamonds Electric fields Graphene Layered materials Nanotechnology devices Physics - Mesoscale and Nanoscale Physics Quantum dots Transition metal compounds |
| title | A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2 |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-10T23%3A17%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_arxiv&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20gate%20defined%20quantum%20dot%20on%20the%20two-dimensional%20transition%20metal%20dichalcogenide%20semiconductor%20WSe2&rft.jtitle=arXiv.org&rft.au=Xiang-Xiang,%20Song&rft.date=2015-10-13&rft.eissn=2331-8422&rft_id=info:doi/10.48550/arxiv.1501.04377&rft_dat=%3Cproquest_arxiv%3E2083414154%3C/proquest_arxiv%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2083414154&rft_id=info:pmid/&rfr_iscdi=true |