Significance of an external magnetic field on two-phonon processes in gated lateral semiconductor quantum dots
Theoretical and numerical calculations of two-phonon processes on gated lateral semiconductor quantum dots (QDs) are outlined. A heterostructure made with two laterally coupled QDs, in the presence of an external magnetic field, has been employed in order to study the electron scattering rate due to...
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description | Theoretical and numerical calculations of two-phonon processes on gated lateral semiconductor quantum dots (QDs) are outlined. A heterostructure made with two laterally coupled QDs, in the presence of an external magnetic field, has been employed in order to study the electron scattering rate due to two-phonon processes. The formalism is based on the acoustic phonon modes via the unscreened deformation potential and the piezoelectric interaction whenever the crystal lattice lacks a center of inversion symmetry. The rates are calculated by using second order perturbation theory. The strong dependence of the scattering rate on the external magnetic field, lattice temperature and QDs separation distance is presented. |
doi_str_mv | 10.48550/arxiv.1405.7159 |
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fullrecord | <record><control><sourceid>proquest_arxiv</sourceid><recordid>TN_cdi_arxiv_primary_1405_7159</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2083104695</sourcerecordid><originalsourceid>FETCH-LOGICAL-a515-f27463e5ae71185d695901dc9a7bfe37ad9b3b80d8d30489cbdfb5b0077c10e53</originalsourceid><addsrcrecordid>eNotkM1LAzEQxYMgWGrvniTgeWs-Nk32KMUvKHiw9yWbTGrKbtImWa3_vVv18uYd3szwfgjdULKslRDkXqeT_1zSmoilpKK5QDPGOa1UzdgVWuS8J4SwlWRC8BkK734XvPNGBwM4OqwDhlOBFHSPB70LULzBzkNvcQy4fMXq8BHDZA8pGsgZMvYB73QBi_tJ07SXYfAmBjuaEhM-jjqUccA2lnyNLp3uMyz-5xxtnx6365dq8_b8un7YVFpQUTkm6xUHoUFSqoRdNaIh1JpGy84Bl9o2He8UscpyUqvGdNZ1oiNESkMJCD5Ht39nf1m0h-QHnb7bM5P2zGQK3P0FphbHEXJp93E8d84tI4pTUk8_-Q-UdmZQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2083104695</pqid></control><display><type>article</type><title>Significance of an external magnetic field on two-phonon processes in gated lateral semiconductor quantum dots</title><source>arXiv.org</source><source>Free E- Journals</source><creator>Stavrou, V N ; Veropoulos, G P</creator><creatorcontrib>Stavrou, V N ; Veropoulos, G P</creatorcontrib><description>Theoretical and numerical calculations of two-phonon processes on gated lateral semiconductor quantum dots (QDs) are outlined. A heterostructure made with two laterally coupled QDs, in the presence of an external magnetic field, has been employed in order to study the electron scattering rate due to two-phonon processes. The formalism is based on the acoustic phonon modes via the unscreened deformation potential and the piezoelectric interaction whenever the crystal lattice lacks a center of inversion symmetry. The rates are calculated by using second order perturbation theory. The strong dependence of the scattering rate on the external magnetic field, lattice temperature and QDs separation distance is presented.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.1405.7159</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Crystal lattices ; Deformation ; Dependence ; Electrons ; Heterostructures ; Lattice vibration ; Magnetic fields ; Mathematical analysis ; Perturbation methods ; Perturbation theory ; Phonons ; Physics - Mesoscale and Nanoscale Physics ; Piezoelectricity ; Quantum dots ; Scattering</subject><ispartof>arXiv.org, 2014-05</ispartof><rights>2014. This work is published under http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,780,784,885,27925</link.rule.ids><backlink>$$Uhttps://doi.org/10.1016/j.ssc.2014.04.008$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.48550/arXiv.1405.7159$$DView paper in arXiv$$Hfree_for_read</backlink></links><search><creatorcontrib>Stavrou, V N</creatorcontrib><creatorcontrib>Veropoulos, G P</creatorcontrib><title>Significance of an external magnetic field on two-phonon processes in gated lateral semiconductor quantum dots</title><title>arXiv.org</title><description>Theoretical and numerical calculations of two-phonon processes on gated lateral semiconductor quantum dots (QDs) are outlined. A heterostructure made with two laterally coupled QDs, in the presence of an external magnetic field, has been employed in order to study the electron scattering rate due to two-phonon processes. The formalism is based on the acoustic phonon modes via the unscreened deformation potential and the piezoelectric interaction whenever the crystal lattice lacks a center of inversion symmetry. The rates are calculated by using second order perturbation theory. The strong dependence of the scattering rate on the external magnetic field, lattice temperature and QDs separation distance is presented.</description><subject>Crystal lattices</subject><subject>Deformation</subject><subject>Dependence</subject><subject>Electrons</subject><subject>Heterostructures</subject><subject>Lattice vibration</subject><subject>Magnetic fields</subject><subject>Mathematical analysis</subject><subject>Perturbation methods</subject><subject>Perturbation theory</subject><subject>Phonons</subject><subject>Physics - Mesoscale and Nanoscale Physics</subject><subject>Piezoelectricity</subject><subject>Quantum dots</subject><subject>Scattering</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GOX</sourceid><recordid>eNotkM1LAzEQxYMgWGrvniTgeWs-Nk32KMUvKHiw9yWbTGrKbtImWa3_vVv18uYd3szwfgjdULKslRDkXqeT_1zSmoilpKK5QDPGOa1UzdgVWuS8J4SwlWRC8BkK734XvPNGBwM4OqwDhlOBFHSPB70LULzBzkNvcQy4fMXq8BHDZA8pGsgZMvYB73QBi_tJ07SXYfAmBjuaEhM-jjqUccA2lnyNLp3uMyz-5xxtnx6365dq8_b8un7YVFpQUTkm6xUHoUFSqoRdNaIh1JpGy84Bl9o2He8UscpyUqvGdNZ1oiNESkMJCD5Ht39nf1m0h-QHnb7bM5P2zGQK3P0FphbHEXJp93E8d84tI4pTUk8_-Q-UdmZQ</recordid><startdate>20140528</startdate><enddate>20140528</enddate><creator>Stavrou, V N</creator><creator>Veropoulos, G P</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20140528</creationdate><title>Significance of an external magnetic field on two-phonon processes in gated lateral semiconductor quantum dots</title><author>Stavrou, V N ; Veropoulos, G P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a515-f27463e5ae71185d695901dc9a7bfe37ad9b3b80d8d30489cbdfb5b0077c10e53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Crystal lattices</topic><topic>Deformation</topic><topic>Dependence</topic><topic>Electrons</topic><topic>Heterostructures</topic><topic>Lattice vibration</topic><topic>Magnetic fields</topic><topic>Mathematical analysis</topic><topic>Perturbation methods</topic><topic>Perturbation theory</topic><topic>Phonons</topic><topic>Physics - Mesoscale and Nanoscale Physics</topic><topic>Piezoelectricity</topic><topic>Quantum dots</topic><topic>Scattering</topic><toplevel>online_resources</toplevel><creatorcontrib>Stavrou, V N</creatorcontrib><creatorcontrib>Veropoulos, G P</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Stavrou, V N</au><au>Veropoulos, G P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Significance of an external magnetic field on two-phonon processes in gated lateral semiconductor quantum dots</atitle><jtitle>arXiv.org</jtitle><date>2014-05-28</date><risdate>2014</risdate><eissn>2331-8422</eissn><abstract>Theoretical and numerical calculations of two-phonon processes on gated lateral semiconductor quantum dots (QDs) are outlined. A heterostructure made with two laterally coupled QDs, in the presence of an external magnetic field, has been employed in order to study the electron scattering rate due to two-phonon processes. The formalism is based on the acoustic phonon modes via the unscreened deformation potential and the piezoelectric interaction whenever the crystal lattice lacks a center of inversion symmetry. The rates are calculated by using second order perturbation theory. The strong dependence of the scattering rate on the external magnetic field, lattice temperature and QDs separation distance is presented.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.1405.7159</doi><oa>free_for_read</oa></addata></record> |
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subjects | Crystal lattices Deformation Dependence Electrons Heterostructures Lattice vibration Magnetic fields Mathematical analysis Perturbation methods Perturbation theory Phonons Physics - Mesoscale and Nanoscale Physics Piezoelectricity Quantum dots Scattering |
title | Significance of an external magnetic field on two-phonon processes in gated lateral semiconductor quantum dots |
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