Comparison of micromagnetic parameters of ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As

We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has easy axis in the sample plane, and (Ga,Mn)(As,P) which has easy axis perpendicular to the sample plane. We use an optical analog of ferromagnetic resonance where the laser-...

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Hauptverfasser: Tesarova, N, Butkovicova, D, Campion, R P, Rushforth, A W, Edmonds, K W, Wadley, P, Gallagher, B L, Schmoranzerova, E, Trojanek, F, Maly, P, Motloch, P, Novak, V, Jungwirth, T, Nemec, P
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creator Tesarova, N
Butkovicova, D
Campion, R P
Rushforth, A W
Edmonds, K W
Wadley, P
Gallagher, B L
Schmoranzerova, E
Trojanek, F
Maly, P
Motloch, P
Novak, V
Jungwirth, T
Nemec, P
description We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has easy axis in the sample plane, and (Ga,Mn)(As,P) which has easy axis perpendicular to the sample plane. We use an optical analog of ferromagnetic resonance where the laser-pulse-induced precession of magnetization is measured directly in the time domain. By the analysis of a single set of pump-and-probe magneto-optical data we determined the magnetic anisotropy fields, the spin stiffness and the Gilbert damping constant in these two materials. We show that incorporation of 10% of phosphorus in (Ga,Mn)As with 6% of manganese leads not only to the expected sign change of the perpendicular to plane anisotropy field but also to an increase of the Gilbert damping and to a reduction of the spin stiffness. The observed changes in the micromagnetic parameters upon incorporating P in (Ga,Mn)As are consistent with the reduced hole density, conductivity, and Curie temperature of the (Ga,Mn)(As,P) material. We report that the magnetization precession damping is stronger for the n = 1 spin wave resonance mode than for the n = 0 uniform magnetization precession mode.
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fullrecord <record><control><sourceid>proquest_arxiv</sourceid><recordid>TN_cdi_arxiv_primary_1405_4677</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2083621038</sourcerecordid><originalsourceid>FETCH-LOGICAL-a518-2d395bff215e22b5d6494f47ca1af0d896559088a892d4152bdf509a7d9fb853</originalsourceid><addsrcrecordid>eNpNkE1Lw0AQhhdBsNTePUnASwtN3K9Jdo-laBUqCnoPk-yupJhs3E1F_72pVfA0MM_Dy8xLyAWjmVQA9BrDZ_ORMUkhk3lRnJAJF4KlSnJ-RmYx7iilPC84gJiQau3bHkMTfZd4l7RNHXyLr50dmjoZAbZ2sCEemLPhH4t2dH1n9vXgRz7f4PKhW8xXcfm0SLAzf5tVPCenDt-inf3OKXm-vXlZ36Xbx839erVNEZhKuREaKuc4A8t5BSaXWjpZ1MjQUaN0DqCpUqg0N5IBr4wDqrEw2lUKxJRcHlN_3i_70LQYvspDDeWhhlG4Ogp98O97G4dy5_ehGy8qOVUi54wKJb4BMile5w</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2083621038</pqid></control><display><type>article</type><title>Comparison of micromagnetic parameters of ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As</title><source>arXiv.org</source><source>Free E- Journals</source><creator>Tesarova, N ; Butkovicova, D ; Campion, R P ; Rushforth, A W ; Edmonds, K W ; Wadley, P ; Gallagher, B L ; Schmoranzerova, E ; Trojanek, F ; Maly, P ; Motloch, P ; Novak, V ; Jungwirth, T ; Nemec, P</creator><creatorcontrib>Tesarova, N ; Butkovicova, D ; Campion, R P ; Rushforth, A W ; Edmonds, K W ; Wadley, P ; Gallagher, B L ; Schmoranzerova, E ; Trojanek, F ; Maly, P ; Motloch, P ; Novak, V ; Jungwirth, T ; Nemec, P</creatorcontrib><description>We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has easy axis in the sample plane, and (Ga,Mn)(As,P) which has easy axis perpendicular to the sample plane. We use an optical analog of ferromagnetic resonance where the laser-pulse-induced precession of magnetization is measured directly in the time domain. By the analysis of a single set of pump-and-probe magneto-optical data we determined the magnetic anisotropy fields, the spin stiffness and the Gilbert damping constant in these two materials. We show that incorporation of 10% of phosphorus in (Ga,Mn)As with 6% of manganese leads not only to the expected sign change of the perpendicular to plane anisotropy field but also to an increase of the Gilbert damping and to a reduction of the spin stiffness. The observed changes in the micromagnetic parameters upon incorporating P in (Ga,Mn)As are consistent with the reduced hole density, conductivity, and Curie temperature of the (Ga,Mn)(As,P) material. We report that the magnetization precession damping is stronger for the n = 1 spin wave resonance mode than for the n = 0 uniform magnetization precession mode.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.1405.4677</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Curie temperature ; Damping ; Ferromagnetic resonance ; Ferromagnetism ; Hole density ; Magnetic anisotropy ; Magnetization ; Magnons ; Manganese ; Parameters ; Physics - Materials Science ; Precession ; Stiffness ; Time domain analysis</subject><ispartof>arXiv.org, 2014-05</ispartof><rights>2014. This work is published under http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,780,784,885,27925</link.rule.ids><backlink>$$Uhttps://doi.org/10.48550/arXiv.1405.4677$$DView paper in arXiv$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.1103/PhysRevB.90.155203$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink></links><search><creatorcontrib>Tesarova, N</creatorcontrib><creatorcontrib>Butkovicova, D</creatorcontrib><creatorcontrib>Campion, R P</creatorcontrib><creatorcontrib>Rushforth, A W</creatorcontrib><creatorcontrib>Edmonds, K W</creatorcontrib><creatorcontrib>Wadley, P</creatorcontrib><creatorcontrib>Gallagher, B L</creatorcontrib><creatorcontrib>Schmoranzerova, E</creatorcontrib><creatorcontrib>Trojanek, F</creatorcontrib><creatorcontrib>Maly, P</creatorcontrib><creatorcontrib>Motloch, P</creatorcontrib><creatorcontrib>Novak, V</creatorcontrib><creatorcontrib>Jungwirth, T</creatorcontrib><creatorcontrib>Nemec, P</creatorcontrib><title>Comparison of micromagnetic parameters of ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As</title><title>arXiv.org</title><description>We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has easy axis in the sample plane, and (Ga,Mn)(As,P) which has easy axis perpendicular to the sample plane. We use an optical analog of ferromagnetic resonance where the laser-pulse-induced precession of magnetization is measured directly in the time domain. By the analysis of a single set of pump-and-probe magneto-optical data we determined the magnetic anisotropy fields, the spin stiffness and the Gilbert damping constant in these two materials. We show that incorporation of 10% of phosphorus in (Ga,Mn)As with 6% of manganese leads not only to the expected sign change of the perpendicular to plane anisotropy field but also to an increase of the Gilbert damping and to a reduction of the spin stiffness. The observed changes in the micromagnetic parameters upon incorporating P in (Ga,Mn)As are consistent with the reduced hole density, conductivity, and Curie temperature of the (Ga,Mn)(As,P) material. We report that the magnetization precession damping is stronger for the n = 1 spin wave resonance mode than for the n = 0 uniform magnetization precession mode.</description><subject>Curie temperature</subject><subject>Damping</subject><subject>Ferromagnetic resonance</subject><subject>Ferromagnetism</subject><subject>Hole density</subject><subject>Magnetic anisotropy</subject><subject>Magnetization</subject><subject>Magnons</subject><subject>Manganese</subject><subject>Parameters</subject><subject>Physics - Materials Science</subject><subject>Precession</subject><subject>Stiffness</subject><subject>Time domain analysis</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GOX</sourceid><recordid>eNpNkE1Lw0AQhhdBsNTePUnASwtN3K9Jdo-laBUqCnoPk-yupJhs3E1F_72pVfA0MM_Dy8xLyAWjmVQA9BrDZ_ORMUkhk3lRnJAJF4KlSnJ-RmYx7iilPC84gJiQau3bHkMTfZd4l7RNHXyLr50dmjoZAbZ2sCEemLPhH4t2dH1n9vXgRz7f4PKhW8xXcfm0SLAzf5tVPCenDt-inf3OKXm-vXlZ36Xbx839erVNEZhKuREaKuc4A8t5BSaXWjpZ1MjQUaN0DqCpUqg0N5IBr4wDqrEw2lUKxJRcHlN_3i_70LQYvspDDeWhhlG4Ogp98O97G4dy5_ehGy8qOVUi54wKJb4BMile5w</recordid><startdate>20140519</startdate><enddate>20140519</enddate><creator>Tesarova, N</creator><creator>Butkovicova, D</creator><creator>Campion, R P</creator><creator>Rushforth, A W</creator><creator>Edmonds, K W</creator><creator>Wadley, P</creator><creator>Gallagher, B L</creator><creator>Schmoranzerova, E</creator><creator>Trojanek, F</creator><creator>Maly, P</creator><creator>Motloch, P</creator><creator>Novak, V</creator><creator>Jungwirth, T</creator><creator>Nemec, P</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20140519</creationdate><title>Comparison of micromagnetic parameters of ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As</title><author>Tesarova, N ; Butkovicova, D ; Campion, R P ; Rushforth, A W ; Edmonds, K W ; Wadley, P ; Gallagher, B L ; Schmoranzerova, E ; Trojanek, F ; Maly, P ; Motloch, P ; Novak, V ; Jungwirth, T ; Nemec, P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a518-2d395bff215e22b5d6494f47ca1af0d896559088a892d4152bdf509a7d9fb853</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Curie temperature</topic><topic>Damping</topic><topic>Ferromagnetic resonance</topic><topic>Ferromagnetism</topic><topic>Hole density</topic><topic>Magnetic anisotropy</topic><topic>Magnetization</topic><topic>Magnons</topic><topic>Manganese</topic><topic>Parameters</topic><topic>Physics - Materials Science</topic><topic>Precession</topic><topic>Stiffness</topic><topic>Time domain analysis</topic><toplevel>online_resources</toplevel><creatorcontrib>Tesarova, N</creatorcontrib><creatorcontrib>Butkovicova, D</creatorcontrib><creatorcontrib>Campion, R P</creatorcontrib><creatorcontrib>Rushforth, A W</creatorcontrib><creatorcontrib>Edmonds, K W</creatorcontrib><creatorcontrib>Wadley, P</creatorcontrib><creatorcontrib>Gallagher, B L</creatorcontrib><creatorcontrib>Schmoranzerova, E</creatorcontrib><creatorcontrib>Trojanek, F</creatorcontrib><creatorcontrib>Maly, P</creatorcontrib><creatorcontrib>Motloch, P</creatorcontrib><creatorcontrib>Novak, V</creatorcontrib><creatorcontrib>Jungwirth, T</creatorcontrib><creatorcontrib>Nemec, P</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science &amp; Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tesarova, N</au><au>Butkovicova, D</au><au>Campion, R P</au><au>Rushforth, A W</au><au>Edmonds, K W</au><au>Wadley, P</au><au>Gallagher, B L</au><au>Schmoranzerova, E</au><au>Trojanek, F</au><au>Maly, P</au><au>Motloch, P</au><au>Novak, V</au><au>Jungwirth, T</au><au>Nemec, P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comparison of micromagnetic parameters of ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As</atitle><jtitle>arXiv.org</jtitle><date>2014-05-19</date><risdate>2014</risdate><eissn>2331-8422</eissn><abstract>We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has easy axis in the sample plane, and (Ga,Mn)(As,P) which has easy axis perpendicular to the sample plane. We use an optical analog of ferromagnetic resonance where the laser-pulse-induced precession of magnetization is measured directly in the time domain. By the analysis of a single set of pump-and-probe magneto-optical data we determined the magnetic anisotropy fields, the spin stiffness and the Gilbert damping constant in these two materials. We show that incorporation of 10% of phosphorus in (Ga,Mn)As with 6% of manganese leads not only to the expected sign change of the perpendicular to plane anisotropy field but also to an increase of the Gilbert damping and to a reduction of the spin stiffness. The observed changes in the micromagnetic parameters upon incorporating P in (Ga,Mn)As are consistent with the reduced hole density, conductivity, and Curie temperature of the (Ga,Mn)(As,P) material. We report that the magnetization precession damping is stronger for the n = 1 spin wave resonance mode than for the n = 0 uniform magnetization precession mode.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.1405.4677</doi><oa>free_for_read</oa></addata></record>
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subjects Curie temperature
Damping
Ferromagnetic resonance
Ferromagnetism
Hole density
Magnetic anisotropy
Magnetization
Magnons
Manganese
Parameters
Physics - Materials Science
Precession
Stiffness
Time domain analysis
title Comparison of micromagnetic parameters of ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As
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