Dead layer on silicon p-i-n diode charged-particle detectors
Semiconductor detectors in general have a dead layer at their surfaces that is either a result of natural or induced passivation, or is formed during the process of making a contact. Charged particles passing through this region produce ionization that is incompletely collected and recorded, which l...
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| creator | Wall, B L Amsbaugh, J F Beglarian, A Bergmann, T Bichsel, H C Bodine, L I Boyd, N M Burritt, T H Chaoui, Z Corona, T J Doe, P J Enomoto, S Harms, F Harper, G C Howe, M A Martin, E L Parno, D S Peterson, D A Petzold, L Renschler, P Robertson, R G H Schwarz, J Steidl, M Van Wechel, T D VanDevender, B A Wüstling, S Wierman, K J Wilkerson, J F |
| description | Semiconductor detectors in general have a dead layer at their surfaces that is either a result of natural or induced passivation, or is formed during the process of making a contact. Charged particles passing through this region produce ionization that is incompletely collected and recorded, which leads to departures from the ideal in both energy deposition and resolution. The silicon \textit{p-i-n} diode used in the KATRIN neutrino-mass experiment has such a dead layer. We have constructed a detailed Monte Carlo model for the passage of electrons from vacuum into a silicon detector, and compared the measured energy spectra to the predicted ones for a range of energies from 12 to 20 keV. The comparison provides experimental evidence that a substantial fraction of the ionization produced in the "dead" layer evidently escapes by diffusion, with 46% being collected in the depletion zone and the balance being neutralized at the contact or by bulk recombination. The most elementary model of a thinner dead layer from which no charge is collected is strongly disfavored. |
| doi_str_mv | 10.48550/arxiv.1310.1178 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_arxiv</sourceid><recordid>TN_cdi_arxiv_primary_1310_1178</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2084803731</sourcerecordid><originalsourceid>FETCH-LOGICAL-a511-f7c519c1763aeb80bb191159ec71dac2e2b0a819b328896f3239e325b94878983</originalsourceid><addsrcrecordid>eNotj01LAzEURYMgWGr3riTgOjUvbzJJwI3UTyi46X5IMm80ZeyMmanYf-_UujpwuVzuYewK5LKwWstbn3_S9xJwCgCMPWMzhQjCFkpdsMUwbKWUqjRKa5yxuwfyNW_9gTLvdnxIbYoTe5HEjtepq4nHD5_fqRa9z2OKLfGaRopjl4dLdt74dqDFP-ds8_S4Wb2I9dvz6-p-LbwGEI2JGlwEU6KnYGUI4AC0o2ig9lGRCtJbcAGVta5sUKEjVDq4whrrLM7Z9Wn2z6zqc_r0-VAdDauj4VS4ORX63H3taRirbbfPu-lSpaQtrESDgL8OJ1F1</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2084803731</pqid></control><display><type>article</type><title>Dead layer on silicon p-i-n diode charged-particle detectors</title><source>arXiv.org</source><source>Free E- Journals</source><creator>Wall, B L ; Amsbaugh, J F ; Beglarian, A ; Bergmann, T ; Bichsel, H C ; Bodine, L I ; Boyd, N M ; Burritt, T H ; Chaoui, Z ; Corona, T J ; Doe, P J ; Enomoto, S ; Harms, F ; Harper, G C ; Howe, M A ; Martin, E L ; Parno, D S ; Peterson, D A ; Petzold, L ; Renschler, P ; Robertson, R G H ; Schwarz, J ; Steidl, M ; Van Wechel, T D ; VanDevender, B A ; Wüstling, S ; Wierman, K J ; Wilkerson, J F</creator><creatorcontrib>Wall, B L ; Amsbaugh, J F ; Beglarian, A ; Bergmann, T ; Bichsel, H C ; Bodine, L I ; Boyd, N M ; Burritt, T H ; Chaoui, Z ; Corona, T J ; Doe, P J ; Enomoto, S ; Harms, F ; Harper, G C ; Howe, M A ; Martin, E L ; Parno, D S ; Peterson, D A ; Petzold, L ; Renschler, P ; Robertson, R G H ; Schwarz, J ; Steidl, M ; Van Wechel, T D ; VanDevender, B A ; Wüstling, S ; Wierman, K J ; Wilkerson, J F</creatorcontrib><description>Semiconductor detectors in general have a dead layer at their surfaces that is either a result of natural or induced passivation, or is formed during the process of making a contact. Charged particles passing through this region produce ionization that is incompletely collected and recorded, which leads to departures from the ideal in both energy deposition and resolution. The silicon \textit{p-i-n} diode used in the KATRIN neutrino-mass experiment has such a dead layer. We have constructed a detailed Monte Carlo model for the passage of electrons from vacuum into a silicon detector, and compared the measured energy spectra to the predicted ones for a range of energies from 12 to 20 keV. The comparison provides experimental evidence that a substantial fraction of the ionization produced in the "dead" layer evidently escapes by diffusion, with 46% being collected in the depletion zone and the balance being neutralized at the contact or by bulk recombination. The most elementary model of a thinner dead layer from which no charge is collected is strongly disfavored.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.1310.1178</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Charged particles ; Computer simulation ; Depletion ; Diffusion layers ; Energy measurement ; Energy spectra ; Ionization ; Neutrinos ; Physics - High Energy Physics - Experiment ; Physics - Instrumentation and Detectors ; Physics - Nuclear Experiment ; Radiation counters ; Semiconductor charged particle detectors ; Silicon</subject><ispartof>arXiv.org, 2013-10</ispartof><rights>2013. This work is published under http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,780,784,885,27924</link.rule.ids><backlink>$$Uhttps://doi.org/10.48550/arXiv.1310.1178$$DView paper in arXiv$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.1016/j.nima.2013.12.048$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink></links><search><creatorcontrib>Wall, B L</creatorcontrib><creatorcontrib>Amsbaugh, J F</creatorcontrib><creatorcontrib>Beglarian, A</creatorcontrib><creatorcontrib>Bergmann, T</creatorcontrib><creatorcontrib>Bichsel, H C</creatorcontrib><creatorcontrib>Bodine, L I</creatorcontrib><creatorcontrib>Boyd, N M</creatorcontrib><creatorcontrib>Burritt, T H</creatorcontrib><creatorcontrib>Chaoui, Z</creatorcontrib><creatorcontrib>Corona, T J</creatorcontrib><creatorcontrib>Doe, P J</creatorcontrib><creatorcontrib>Enomoto, S</creatorcontrib><creatorcontrib>Harms, F</creatorcontrib><creatorcontrib>Harper, G C</creatorcontrib><creatorcontrib>Howe, M A</creatorcontrib><creatorcontrib>Martin, E L</creatorcontrib><creatorcontrib>Parno, D S</creatorcontrib><creatorcontrib>Peterson, D A</creatorcontrib><creatorcontrib>Petzold, L</creatorcontrib><creatorcontrib>Renschler, P</creatorcontrib><creatorcontrib>Robertson, R G H</creatorcontrib><creatorcontrib>Schwarz, J</creatorcontrib><creatorcontrib>Steidl, M</creatorcontrib><creatorcontrib>Van Wechel, T D</creatorcontrib><creatorcontrib>VanDevender, B A</creatorcontrib><creatorcontrib>Wüstling, S</creatorcontrib><creatorcontrib>Wierman, K J</creatorcontrib><creatorcontrib>Wilkerson, J F</creatorcontrib><title>Dead layer on silicon p-i-n diode charged-particle detectors</title><title>arXiv.org</title><description>Semiconductor detectors in general have a dead layer at their surfaces that is either a result of natural or induced passivation, or is formed during the process of making a contact. Charged particles passing through this region produce ionization that is incompletely collected and recorded, which leads to departures from the ideal in both energy deposition and resolution. The silicon \textit{p-i-n} diode used in the KATRIN neutrino-mass experiment has such a dead layer. We have constructed a detailed Monte Carlo model for the passage of electrons from vacuum into a silicon detector, and compared the measured energy spectra to the predicted ones for a range of energies from 12 to 20 keV. The comparison provides experimental evidence that a substantial fraction of the ionization produced in the "dead" layer evidently escapes by diffusion, with 46% being collected in the depletion zone and the balance being neutralized at the contact or by bulk recombination. The most elementary model of a thinner dead layer from which no charge is collected is strongly disfavored.</description><subject>Charged particles</subject><subject>Computer simulation</subject><subject>Depletion</subject><subject>Diffusion layers</subject><subject>Energy measurement</subject><subject>Energy spectra</subject><subject>Ionization</subject><subject>Neutrinos</subject><subject>Physics - High Energy Physics - Experiment</subject><subject>Physics - Instrumentation and Detectors</subject><subject>Physics - Nuclear Experiment</subject><subject>Radiation counters</subject><subject>Semiconductor charged particle detectors</subject><subject>Silicon</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GOX</sourceid><recordid>eNotj01LAzEURYMgWGr3riTgOjUvbzJJwI3UTyi46X5IMm80ZeyMmanYf-_UujpwuVzuYewK5LKwWstbn3_S9xJwCgCMPWMzhQjCFkpdsMUwbKWUqjRKa5yxuwfyNW_9gTLvdnxIbYoTe5HEjtepq4nHD5_fqRa9z2OKLfGaRopjl4dLdt74dqDFP-ds8_S4Wb2I9dvz6-p-LbwGEI2JGlwEU6KnYGUI4AC0o2ig9lGRCtJbcAGVta5sUKEjVDq4whrrLM7Z9Wn2z6zqc_r0-VAdDauj4VS4ORX63H3taRirbbfPu-lSpaQtrESDgL8OJ1F1</recordid><startdate>20131007</startdate><enddate>20131007</enddate><creator>Wall, B L</creator><creator>Amsbaugh, J F</creator><creator>Beglarian, A</creator><creator>Bergmann, T</creator><creator>Bichsel, H C</creator><creator>Bodine, L I</creator><creator>Boyd, N M</creator><creator>Burritt, T H</creator><creator>Chaoui, Z</creator><creator>Corona, T J</creator><creator>Doe, P J</creator><creator>Enomoto, S</creator><creator>Harms, F</creator><creator>Harper, G C</creator><creator>Howe, M A</creator><creator>Martin, E L</creator><creator>Parno, D S</creator><creator>Peterson, D A</creator><creator>Petzold, L</creator><creator>Renschler, P</creator><creator>Robertson, R G H</creator><creator>Schwarz, J</creator><creator>Steidl, M</creator><creator>Van Wechel, T D</creator><creator>VanDevender, B A</creator><creator>Wüstling, S</creator><creator>Wierman, K J</creator><creator>Wilkerson, J F</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20131007</creationdate><title>Dead layer on silicon p-i-n diode charged-particle detectors</title><author>Wall, B L ; Amsbaugh, J F ; Beglarian, A ; Bergmann, T ; Bichsel, H C ; Bodine, L I ; Boyd, N M ; Burritt, T H ; Chaoui, Z ; Corona, T J ; Doe, P J ; Enomoto, S ; Harms, F ; Harper, G C ; Howe, M A ; Martin, E L ; Parno, D S ; Peterson, D A ; Petzold, L ; Renschler, P ; Robertson, R G H ; Schwarz, J ; Steidl, M ; Van Wechel, T D ; VanDevender, B A ; Wüstling, S ; Wierman, K J ; Wilkerson, J F</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a511-f7c519c1763aeb80bb191159ec71dac2e2b0a819b328896f3239e325b94878983</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Charged particles</topic><topic>Computer simulation</topic><topic>Depletion</topic><topic>Diffusion layers</topic><topic>Energy measurement</topic><topic>Energy spectra</topic><topic>Ionization</topic><topic>Neutrinos</topic><topic>Physics - High Energy Physics - Experiment</topic><topic>Physics - Instrumentation and Detectors</topic><topic>Physics - Nuclear Experiment</topic><topic>Radiation counters</topic><topic>Semiconductor charged particle detectors</topic><topic>Silicon</topic><toplevel>online_resources</toplevel><creatorcontrib>Wall, B L</creatorcontrib><creatorcontrib>Amsbaugh, J F</creatorcontrib><creatorcontrib>Beglarian, A</creatorcontrib><creatorcontrib>Bergmann, T</creatorcontrib><creatorcontrib>Bichsel, H C</creatorcontrib><creatorcontrib>Bodine, L I</creatorcontrib><creatorcontrib>Boyd, N M</creatorcontrib><creatorcontrib>Burritt, T H</creatorcontrib><creatorcontrib>Chaoui, Z</creatorcontrib><creatorcontrib>Corona, T J</creatorcontrib><creatorcontrib>Doe, P J</creatorcontrib><creatorcontrib>Enomoto, S</creatorcontrib><creatorcontrib>Harms, F</creatorcontrib><creatorcontrib>Harper, G C</creatorcontrib><creatorcontrib>Howe, M A</creatorcontrib><creatorcontrib>Martin, E L</creatorcontrib><creatorcontrib>Parno, D S</creatorcontrib><creatorcontrib>Peterson, D A</creatorcontrib><creatorcontrib>Petzold, L</creatorcontrib><creatorcontrib>Renschler, P</creatorcontrib><creatorcontrib>Robertson, R G H</creatorcontrib><creatorcontrib>Schwarz, J</creatorcontrib><creatorcontrib>Steidl, M</creatorcontrib><creatorcontrib>Van Wechel, T D</creatorcontrib><creatorcontrib>VanDevender, B A</creatorcontrib><creatorcontrib>Wüstling, S</creatorcontrib><creatorcontrib>Wierman, K J</creatorcontrib><creatorcontrib>Wilkerson, J F</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wall, B L</au><au>Amsbaugh, J F</au><au>Beglarian, A</au><au>Bergmann, T</au><au>Bichsel, H C</au><au>Bodine, L I</au><au>Boyd, N M</au><au>Burritt, T H</au><au>Chaoui, Z</au><au>Corona, T J</au><au>Doe, P J</au><au>Enomoto, S</au><au>Harms, F</au><au>Harper, G C</au><au>Howe, M A</au><au>Martin, E L</au><au>Parno, D S</au><au>Peterson, D A</au><au>Petzold, L</au><au>Renschler, P</au><au>Robertson, R G H</au><au>Schwarz, J</au><au>Steidl, M</au><au>Van Wechel, T D</au><au>VanDevender, B A</au><au>Wüstling, S</au><au>Wierman, K J</au><au>Wilkerson, J F</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dead layer on silicon p-i-n diode charged-particle detectors</atitle><jtitle>arXiv.org</jtitle><date>2013-10-07</date><risdate>2013</risdate><eissn>2331-8422</eissn><abstract>Semiconductor detectors in general have a dead layer at their surfaces that is either a result of natural or induced passivation, or is formed during the process of making a contact. Charged particles passing through this region produce ionization that is incompletely collected and recorded, which leads to departures from the ideal in both energy deposition and resolution. The silicon \textit{p-i-n} diode used in the KATRIN neutrino-mass experiment has such a dead layer. We have constructed a detailed Monte Carlo model for the passage of electrons from vacuum into a silicon detector, and compared the measured energy spectra to the predicted ones for a range of energies from 12 to 20 keV. The comparison provides experimental evidence that a substantial fraction of the ionization produced in the "dead" layer evidently escapes by diffusion, with 46% being collected in the depletion zone and the balance being neutralized at the contact or by bulk recombination. The most elementary model of a thinner dead layer from which no charge is collected is strongly disfavored.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.1310.1178</doi><oa>free_for_read</oa></addata></record> |
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| subjects | Charged particles Computer simulation Depletion Diffusion layers Energy measurement Energy spectra Ionization Neutrinos Physics - High Energy Physics - Experiment Physics - Instrumentation and Detectors Physics - Nuclear Experiment Radiation counters Semiconductor charged particle detectors Silicon |
| title | Dead layer on silicon p-i-n diode charged-particle detectors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T10%3A29%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_arxiv&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Dead%20layer%20on%20silicon%20p-i-n%20diode%20charged-particle%20detectors&rft.jtitle=arXiv.org&rft.au=Wall,%20B%20L&rft.date=2013-10-07&rft.eissn=2331-8422&rft_id=info:doi/10.48550/arxiv.1310.1178&rft_dat=%3Cproquest_arxiv%3E2084803731%3C/proquest_arxiv%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2084803731&rft_id=info:pmid/&rfr_iscdi=true |