Fabrication of Nb/Al2O3/Nb Josephson Junctions using in situ Magnetron Sputtering and Atomic Layer Deposition

Atomic layer deposition (ALD) provides a promising approach for deposition of ultrathin low-defect-density tunnel barriers, and it has been implemented in a high-vacuum magnetron sputtering system for in situ deposition of ALD-Al2O3 tunnel barriers in superconductor-insulator-superconductor (SIS) Jo...

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Veröffentlicht in:	arXiv.org 2013-09
Hauptverfasser:	Lu, Rongtao, Elliot, Alan J, Wille, Logan, Mao, Bo, Han, Siyuan, Wu, Judy Z, Talvacchio, John, Schulze, Heidi M, Lewis, Rupert M, Ewing, Daniel J, Yu, H F, Xue, G M, Zhao, S P
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Atomic layer epitaxy Barrier layers Current voltage characteristics Electrodes Josephson junctions Magnetron sputtering Niobium Physics - Materials Science
Online-Zugang:	Volltext
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