Quasi-Periodic Nanoripples in Graphene Grown by Chemical Vapor Deposition and Its Impact on Charge Transport
The technical breakthrough in synthesizing graphene by chemical vapor deposition methods (CVD) has opened up enormous opportunities for large-scale device applications. In order to improve the electrical properties of CVD graphene grown on copper (Cu-CVD graphene), recent efforts have focussed on in...
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| creator | Guang-Xin Ni Zheng, Yi Bae, Sukang Kim, Hye Ri Pachoud, Alexandre Kim, Young Soo Chang-Ling, Tan Im, Danho Jong-Hyun Ahn Hong, Byung Hee Özyilmaz, Barbaros |
| description | The technical breakthrough in synthesizing graphene by chemical vapor deposition methods (CVD) has opened up enormous opportunities for large-scale device applications. In order to improve the electrical properties of CVD graphene grown on copper (Cu-CVD graphene), recent efforts have focussed on increasing the grain size of such polycrystalline graphene films to 100 micrometers and larger. While an increase in grain size and hence, a decrease of grain boundary density is expected to greatly enhance the device performance, here we show that the charge mobility and sheet resistance of Cu-CVD graphene is already limited within a single grain. We find that the current high-temperature growth and wet transfer methods of CVD graphene result in quasi-periodic nanoripple arrays (NRAs). Electron-flexural phonon scattering in such partially suspended graphene devices introduces anisotropic charge transport and sets limits to both the highest possible charge mobility and lowest possible sheet resistance values. Our findings provide guidance for further improving the CVD graphene growth and transfer process. |
| doi_str_mv | 10.48550/arxiv.1302.1310 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_arxiv</sourceid><recordid>TN_cdi_arxiv_primary_1302_1310</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2085281846</sourcerecordid><originalsourceid>FETCH-LOGICAL-a516-220832aea0c616aa1bdda6b3b75eb4e66a65a91de7f1c837cce52988bc8a3293</originalsourceid><addsrcrecordid>eNotkE1LAzEQhoMgWGrvniTgeWs-Ntn0KKvWQvEDi9dlNpvalG0Sk63af2-0XmaGl4eZ4UHogpJpqYQg1xC_7eeUcsJyoeQEjRjntFAlY2doktKWEMJkxYTgI9S_7CHZ4tlE6zur8SM4H20IvUnYOjyPEDbGmTz4L4fbA643Zmc19PgNgo_41gSf7GC9w-A6vBgSXuwC6AHnpN5AfDd4FcGlDA_n6HQNfTKT_z5Gr_d3q_qhWD7NF_XNsgBBZcEYUZyBAaIllQC07TqQLW8rYdrSSAlSwIx2plpTrXiltRFsplSrFXA242N0edz6J6IJ0e4gHppfIc2vkAxcHYEQ_cfepKHZ-n10-aMmnxZMUVVK_gM2gmQf</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2085281846</pqid></control><display><type>article</type><title>Quasi-Periodic Nanoripples in Graphene Grown by Chemical Vapor Deposition and Its Impact on Charge Transport</title><source>arXiv.org</source><source>Free E- Journals</source><creator>Guang-Xin Ni ; Zheng, Yi ; Bae, Sukang ; Kim, Hye Ri ; Pachoud, Alexandre ; Kim, Young Soo ; Chang-Ling, Tan ; Im, Danho ; Jong-Hyun Ahn ; Hong, Byung Hee ; Özyilmaz, Barbaros</creator><creatorcontrib>Guang-Xin Ni ; Zheng, Yi ; Bae, Sukang ; Kim, Hye Ri ; Pachoud, Alexandre ; Kim, Young Soo ; Chang-Ling, Tan ; Im, Danho ; Jong-Hyun Ahn ; Hong, Byung Hee ; Özyilmaz, Barbaros</creatorcontrib><description>The technical breakthrough in synthesizing graphene by chemical vapor deposition methods (CVD) has opened up enormous opportunities for large-scale device applications. In order to improve the electrical properties of CVD graphene grown on copper (Cu-CVD graphene), recent efforts have focussed on increasing the grain size of such polycrystalline graphene films to 100 micrometers and larger. While an increase in grain size and hence, a decrease of grain boundary density is expected to greatly enhance the device performance, here we show that the charge mobility and sheet resistance of Cu-CVD graphene is already limited within a single grain. We find that the current high-temperature growth and wet transfer methods of CVD graphene result in quasi-periodic nanoripple arrays (NRAs). Electron-flexural phonon scattering in such partially suspended graphene devices introduces anisotropic charge transport and sets limits to both the highest possible charge mobility and lowest possible sheet resistance values. Our findings provide guidance for further improving the CVD graphene growth and transfer process.</description><identifier>EISSN: 2331-8422</identifier><identifier>DOI: 10.48550/arxiv.1302.1310</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Charge transport ; Chemical synthesis ; Chemical vapor deposition ; Copper ; Electrical properties ; Electrical resistivity ; Grain boundaries ; Grain size ; Graphene ; High temperature ; Micrometers ; Nanotubes ; Organic chemistry ; Physics - Mesoscale and Nanoscale Physics</subject><ispartof>arXiv.org, 2013-02</ispartof><rights>2013. This work is published under http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,776,780,881,27902</link.rule.ids><backlink>$$Uhttps://doi.org/10.48550/arXiv.1302.1310$$DView paper in arXiv$$Hfree_for_read</backlink><backlink>$$Uhttps://doi.org/10.1021/nn203775x$$DView published paper (Access to full text may be restricted)$$Hfree_for_read</backlink></links><search><creatorcontrib>Guang-Xin Ni</creatorcontrib><creatorcontrib>Zheng, Yi</creatorcontrib><creatorcontrib>Bae, Sukang</creatorcontrib><creatorcontrib>Kim, Hye Ri</creatorcontrib><creatorcontrib>Pachoud, Alexandre</creatorcontrib><creatorcontrib>Kim, Young Soo</creatorcontrib><creatorcontrib>Chang-Ling, Tan</creatorcontrib><creatorcontrib>Im, Danho</creatorcontrib><creatorcontrib>Jong-Hyun Ahn</creatorcontrib><creatorcontrib>Hong, Byung Hee</creatorcontrib><creatorcontrib>Özyilmaz, Barbaros</creatorcontrib><title>Quasi-Periodic Nanoripples in Graphene Grown by Chemical Vapor Deposition and Its Impact on Charge Transport</title><title>arXiv.org</title><description>The technical breakthrough in synthesizing graphene by chemical vapor deposition methods (CVD) has opened up enormous opportunities for large-scale device applications. In order to improve the electrical properties of CVD graphene grown on copper (Cu-CVD graphene), recent efforts have focussed on increasing the grain size of such polycrystalline graphene films to 100 micrometers and larger. While an increase in grain size and hence, a decrease of grain boundary density is expected to greatly enhance the device performance, here we show that the charge mobility and sheet resistance of Cu-CVD graphene is already limited within a single grain. We find that the current high-temperature growth and wet transfer methods of CVD graphene result in quasi-periodic nanoripple arrays (NRAs). Electron-flexural phonon scattering in such partially suspended graphene devices introduces anisotropic charge transport and sets limits to both the highest possible charge mobility and lowest possible sheet resistance values. Our findings provide guidance for further improving the CVD graphene growth and transfer process.</description><subject>Charge transport</subject><subject>Chemical synthesis</subject><subject>Chemical vapor deposition</subject><subject>Copper</subject><subject>Electrical properties</subject><subject>Electrical resistivity</subject><subject>Grain boundaries</subject><subject>Grain size</subject><subject>Graphene</subject><subject>High temperature</subject><subject>Micrometers</subject><subject>Nanotubes</subject><subject>Organic chemistry</subject><subject>Physics - Mesoscale and Nanoscale Physics</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><sourceid>GOX</sourceid><recordid>eNotkE1LAzEQhoMgWGrvniTgeWs-Ntn0KKvWQvEDi9dlNpvalG0Sk63af2-0XmaGl4eZ4UHogpJpqYQg1xC_7eeUcsJyoeQEjRjntFAlY2doktKWEMJkxYTgI9S_7CHZ4tlE6zur8SM4H20IvUnYOjyPEDbGmTz4L4fbA643Zmc19PgNgo_41gSf7GC9w-A6vBgSXuwC6AHnpN5AfDd4FcGlDA_n6HQNfTKT_z5Gr_d3q_qhWD7NF_XNsgBBZcEYUZyBAaIllQC07TqQLW8rYdrSSAlSwIx2plpTrXiltRFsplSrFXA242N0edz6J6IJ0e4gHppfIc2vkAxcHYEQ_cfepKHZ-n10-aMmnxZMUVVK_gM2gmQf</recordid><startdate>20130206</startdate><enddate>20130206</enddate><creator>Guang-Xin Ni</creator><creator>Zheng, Yi</creator><creator>Bae, Sukang</creator><creator>Kim, Hye Ri</creator><creator>Pachoud, Alexandre</creator><creator>Kim, Young Soo</creator><creator>Chang-Ling, Tan</creator><creator>Im, Danho</creator><creator>Jong-Hyun Ahn</creator><creator>Hong, Byung Hee</creator><creator>Özyilmaz, Barbaros</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>GOX</scope></search><sort><creationdate>20130206</creationdate><title>Quasi-Periodic Nanoripples in Graphene Grown by Chemical Vapor Deposition and Its Impact on Charge Transport</title><author>Guang-Xin Ni ; Zheng, Yi ; Bae, Sukang ; Kim, Hye Ri ; Pachoud, Alexandre ; Kim, Young Soo ; Chang-Ling, Tan ; Im, Danho ; Jong-Hyun Ahn ; Hong, Byung Hee ; Özyilmaz, Barbaros</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a516-220832aea0c616aa1bdda6b3b75eb4e66a65a91de7f1c837cce52988bc8a3293</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Charge transport</topic><topic>Chemical synthesis</topic><topic>Chemical vapor deposition</topic><topic>Copper</topic><topic>Electrical properties</topic><topic>Electrical resistivity</topic><topic>Grain boundaries</topic><topic>Grain size</topic><topic>Graphene</topic><topic>High temperature</topic><topic>Micrometers</topic><topic>Nanotubes</topic><topic>Organic chemistry</topic><topic>Physics - Mesoscale and Nanoscale Physics</topic><toplevel>online_resources</toplevel><creatorcontrib>Guang-Xin Ni</creatorcontrib><creatorcontrib>Zheng, Yi</creatorcontrib><creatorcontrib>Bae, Sukang</creatorcontrib><creatorcontrib>Kim, Hye Ri</creatorcontrib><creatorcontrib>Pachoud, Alexandre</creatorcontrib><creatorcontrib>Kim, Young Soo</creatorcontrib><creatorcontrib>Chang-Ling, Tan</creatorcontrib><creatorcontrib>Im, Danho</creatorcontrib><creatorcontrib>Jong-Hyun Ahn</creatorcontrib><creatorcontrib>Hong, Byung Hee</creatorcontrib><creatorcontrib>Özyilmaz, Barbaros</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>arXiv.org</collection><jtitle>arXiv.org</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Guang-Xin Ni</au><au>Zheng, Yi</au><au>Bae, Sukang</au><au>Kim, Hye Ri</au><au>Pachoud, Alexandre</au><au>Kim, Young Soo</au><au>Chang-Ling, Tan</au><au>Im, Danho</au><au>Jong-Hyun Ahn</au><au>Hong, Byung Hee</au><au>Özyilmaz, Barbaros</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Quasi-Periodic Nanoripples in Graphene Grown by Chemical Vapor Deposition and Its Impact on Charge Transport</atitle><jtitle>arXiv.org</jtitle><date>2013-02-06</date><risdate>2013</risdate><eissn>2331-8422</eissn><abstract>The technical breakthrough in synthesizing graphene by chemical vapor deposition methods (CVD) has opened up enormous opportunities for large-scale device applications. In order to improve the electrical properties of CVD graphene grown on copper (Cu-CVD graphene), recent efforts have focussed on increasing the grain size of such polycrystalline graphene films to 100 micrometers and larger. While an increase in grain size and hence, a decrease of grain boundary density is expected to greatly enhance the device performance, here we show that the charge mobility and sheet resistance of Cu-CVD graphene is already limited within a single grain. We find that the current high-temperature growth and wet transfer methods of CVD graphene result in quasi-periodic nanoripple arrays (NRAs). Electron-flexural phonon scattering in such partially suspended graphene devices introduces anisotropic charge transport and sets limits to both the highest possible charge mobility and lowest possible sheet resistance values. Our findings provide guidance for further improving the CVD graphene growth and transfer process.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><doi>10.48550/arxiv.1302.1310</doi><oa>free_for_read</oa></addata></record> |
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| subjects | Charge transport Chemical synthesis Chemical vapor deposition Copper Electrical properties Electrical resistivity Grain boundaries Grain size Graphene High temperature Micrometers Nanotubes Organic chemistry Physics - Mesoscale and Nanoscale Physics |
| title | Quasi-Periodic Nanoripples in Graphene Grown by Chemical Vapor Deposition and Its Impact on Charge Transport |
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