Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics

The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other two-dimensional (2D) crystals, which can be assembled in 3D stacks...

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Veröffentlicht in:	arXiv.org 2012-11
Hauptverfasser:	Georgiou, Thanasis, Rashid Jalil, Belle, Branson D, Britnell, Liam, Gorbachev, Roman V, Morozov, Sergey V, Yong-Jin, Kim, Gholinia, Ali, Haigh, Sarah J, Makarovsky, Oleg, Eaves, Laurence, Ponomarenko, Leonid A, Geim, Andre K, Novoselov, Kostya S, Mishchenko, Artem
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS Current modulation Field effect transistors Graphene Heterostructures Physics - Materials Science Physics - Mesoscale and Nanoscale Physics Semiconductor devices Stacks Substrates Thin films Transistors Tungsten disulfide Van der Waals forces
Online-Zugang:	Volltext
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