Coulomb drag in graphene - boron nitride heterostructures: the effect of virtual phonon exchange

For a system of two spatially separated monoatomic graphene layers encapsulated in hexagonal boron nitride, we consider the drag effect between charge carriers in the Fermi liquid regime. Commonly, the phenomenon is described in terms of an interlayer Coulomb interaction. We show that if an addition...

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Veröffentlicht in:arXiv.org 2012-09
Hauptverfasser: Amorim, Bruno, Schiefele, Jürgen, Sols, Fernando, Guinea, Francisco
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description For a system of two spatially separated monoatomic graphene layers encapsulated in hexagonal boron nitride, we consider the drag effect between charge carriers in the Fermi liquid regime. Commonly, the phenomenon is described in terms of an interlayer Coulomb interaction. We show that if an additional electron - electron interaction via exchange of virtual substrate phonons is included in the model, the predicted drag resistivity is modified considerably at temperatures above 150 K. The anisotropic crystal structure of boron nitride, with strong intralayer and comparatively weak interlayer bonds, is found to play an important role in this effect.
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subjects Bonding strength
Boron
Boron nitride
Crystal structure
Current carriers
Drag
Exchanging
Fermi liquids
Graphene
Heterostructures
Interlayers
Phonons
Physics - Mesoscale and Nanoscale Physics
Substrates
title Coulomb drag in graphene - boron nitride heterostructures: the effect of virtual phonon exchange
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