Ni(111)|Graphene|h-BN Junctions as Ideal Spin Injectors
Deposition of graphene on top of hexagonal boron nitride (h-BN) was very recently demonstrated while graphene is now routinely grown on Ni. Because the in-plane lattice constants of graphite, h-BN, graphite-like BC2N and of the close-packed surfaces of Co, Ni and Cu match almost perfectly, it should...
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| creator | Karpan, Volodymyr M Khomyakov, Petr A Giovannetti, Gianluca Starikov, Anton A Kelly, Paul J |
| description | Deposition of graphene on top of hexagonal boron nitride (h-BN) was very recently demonstrated while graphene is now routinely grown on Ni. Because the in-plane lattice constants of graphite, h-BN, graphite-like BC2N and of the close-packed surfaces of Co, Ni and Cu match almost perfectly, it should be possible to prepare ideal interfaces between these materials which are respectively, a semimetal, insulator, semiconductor, ferromagnetic and nonmagnetic metals. Using parameter-free energy minimization and electronic transport calculations, we show how h-BN can be combined with the perfect spin filtering property of Ni|graphite and Co|graphite interfaces to make perfect tunnel junctions or ideal spin injectors (SI) with any desired resistance-area product. |
| doi_str_mv | 10.48550/arxiv.1110.5291 |
| format | Article |
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| subjects | Boron nitride Copper Electron transport Energy conservation Ferromagnetic materials Free energy Graphene Graphical user interface Graphite Injectors Lattice parameters Nickel Physics - Materials Science Physics - Mesoscale and Nanoscale Physics Tunnel junctions |
| title | Ni(111)|Graphene|h-BN Junctions as Ideal Spin Injectors |
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