Wafer-scale selective area growth of GaN hexagonal prismatic nanostructures on c-sapphire substrate

Selective area growth of GaN nanostructures has been performed on full 2" c-sapphire substrates using Si3N4 mask patterned by nanoimprint lithography (array of 400 nm diameter circular holes). A new process has been developed to improve the homogeneity of the nucleation selectivity of c-oriente...

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Veröffentlicht in:	arXiv.org 2011-06
Hauptverfasser:	Chen, Xiao Jun, Jun-Seo, Hwang, Perillat-Merceroz, Guillaume, Landis, Stefan, Martin, Brigitte, Le Si Dang, Daniel, Eymery, Joël, Durand, Christophe
Format:	Artikel
Sprache:	eng
Schlagworte:	Ammonia Cathodoluminescence Compressive properties Crystal lattices Dislocations Epitaxial growth Gallium nitrides High temperature Nanostructure Nanotechnology Nucleation Physics - Materials Science Sapphire Selectivity Substrates
Online-Zugang:	Volltext
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