Tensile-Strained Germanium-on-Insulator Substrate Fabrication for Silicon-Compatible Optoelectronics
Optical Materials Express 1(6), 1121--1126 (2011) We present a method to fabricate tensile-strained germanium-on-insulator (GOI) substrates using heteroepitaxy and layer transfer techniques. The motivation is to obtain a high-quality wafer-scale GOI platform suitable for silicon-compatible optoelect...
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| creator | Jain, J. Raja Ly-Gagnon, Dany-Sebastien Balram, Krishna C White, Justin S Brongersma, Mark L Miller, David A. B Howe, Roger T |
| description | Optical Materials Express 1(6), 1121--1126 (2011) We present a method to fabricate tensile-strained germanium-on-insulator
(GOI) substrates using heteroepitaxy and layer transfer techniques. The
motivation is to obtain a high-quality wafer-scale GOI platform suitable for
silicon-compatible optoelectronic device fabrication. Crystal quality is
assessed using X-Ray Diffraction (XRD) and Transmission Electron Microscopy. A
biaxial tensile film strain of 0.16% is verified by XRD. Suitability for device
manufacturing is demonstrated through fabrication and characterization of
metal-semiconductor-metal photodetectors that exhibit photoresponse beyond 1.55
{\mu}m. The substrate fabrication process is compatible with complementary
metal-oxide-semiconductor manufacturing and represents a potential route to
wafer-scale integration of silicon-compatible optoelectronics. |
| doi_str_mv | 10.48550/arxiv.1105.0044 |
| format | Article |
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(GOI) substrates using heteroepitaxy and layer transfer techniques. The
motivation is to obtain a high-quality wafer-scale GOI platform suitable for
silicon-compatible optoelectronic device fabrication. Crystal quality is
assessed using X-Ray Diffraction (XRD) and Transmission Electron Microscopy. A
biaxial tensile film strain of 0.16% is verified by XRD. Suitability for device
manufacturing is demonstrated through fabrication and characterization of
metal-semiconductor-metal photodetectors that exhibit photoresponse beyond 1.55
{\mu}m. The substrate fabrication process is compatible with complementary
metal-oxide-semiconductor manufacturing and represents a potential route to
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(GOI) substrates using heteroepitaxy and layer transfer techniques. The
motivation is to obtain a high-quality wafer-scale GOI platform suitable for
silicon-compatible optoelectronic device fabrication. Crystal quality is
assessed using X-Ray Diffraction (XRD) and Transmission Electron Microscopy. A
biaxial tensile film strain of 0.16% is verified by XRD. Suitability for device
manufacturing is demonstrated through fabrication and characterization of
metal-semiconductor-metal photodetectors that exhibit photoresponse beyond 1.55
{\mu}m. The substrate fabrication process is compatible with complementary
metal-oxide-semiconductor manufacturing and represents a potential route to
wafer-scale integration of silicon-compatible optoelectronics.</description><subject>Physics - Optics</subject><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>GOX</sourceid><recordid>eNotj7FqwzAURbV0KGn3TsE_IFeWJScai2nSQCBDvJsn6RkEsmRkubR_X7vtdOHew4VDyEvFSnGUkr1C-nKfZVUxWTImxCOxHYbZeaT3nMAFtMUZ0wjBLSONgV7CvHjIMRX3Rc8rkrE4gU7OQHYxFMO2OO_MyrZxnNZWeyxuU47o0eQUgzPzE3kYwM_4_J870p3eu_aDXm_nS_t2pdBIQbXgXPLhyAE5AIdaM8uV5fKgFK9MAwdQDRjDUKsKrW3UwKS0TNeNVSBlvSP7v9tfy35KboT03W-2_WZb_wCqqFHx</recordid><startdate>20110430</startdate><enddate>20110430</enddate><creator>Jain, J. Raja</creator><creator>Ly-Gagnon, Dany-Sebastien</creator><creator>Balram, Krishna C</creator><creator>White, Justin S</creator><creator>Brongersma, Mark L</creator><creator>Miller, David A. B</creator><creator>Howe, Roger T</creator><scope>GOX</scope></search><sort><creationdate>20110430</creationdate><title>Tensile-Strained Germanium-on-Insulator Substrate Fabrication for Silicon-Compatible Optoelectronics</title><author>Jain, J. Raja ; Ly-Gagnon, Dany-Sebastien ; Balram, Krishna C ; White, Justin S ; Brongersma, Mark L ; Miller, David A. B ; Howe, Roger T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a654-b42252f82ae2aa2a3b0d29d2579921c6a7a96acc0eb91edd69f055d0b36d9a553</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Physics - Optics</topic><toplevel>online_resources</toplevel><creatorcontrib>Jain, J. Raja</creatorcontrib><creatorcontrib>Ly-Gagnon, Dany-Sebastien</creatorcontrib><creatorcontrib>Balram, Krishna C</creatorcontrib><creatorcontrib>White, Justin S</creatorcontrib><creatorcontrib>Brongersma, Mark L</creatorcontrib><creatorcontrib>Miller, David A. B</creatorcontrib><creatorcontrib>Howe, Roger T</creatorcontrib><collection>arXiv.org</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jain, J. Raja</au><au>Ly-Gagnon, Dany-Sebastien</au><au>Balram, Krishna C</au><au>White, Justin S</au><au>Brongersma, Mark L</au><au>Miller, David A. B</au><au>Howe, Roger T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tensile-Strained Germanium-on-Insulator Substrate Fabrication for Silicon-Compatible Optoelectronics</atitle><date>2011-04-30</date><risdate>2011</risdate><abstract>Optical Materials Express 1(6), 1121--1126 (2011) We present a method to fabricate tensile-strained germanium-on-insulator
(GOI) substrates using heteroepitaxy and layer transfer techniques. The
motivation is to obtain a high-quality wafer-scale GOI platform suitable for
silicon-compatible optoelectronic device fabrication. Crystal quality is
assessed using X-Ray Diffraction (XRD) and Transmission Electron Microscopy. A
biaxial tensile film strain of 0.16% is verified by XRD. Suitability for device
manufacturing is demonstrated through fabrication and characterization of
metal-semiconductor-metal photodetectors that exhibit photoresponse beyond 1.55
{\mu}m. The substrate fabrication process is compatible with complementary
metal-oxide-semiconductor manufacturing and represents a potential route to
wafer-scale integration of silicon-compatible optoelectronics.</abstract><doi>10.48550/arxiv.1105.0044</doi><oa>free_for_read</oa></addata></record> |
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| subjects | Physics - Optics |
| title | Tensile-Strained Germanium-on-Insulator Substrate Fabrication for Silicon-Compatible Optoelectronics |
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